physica status solidi (a)

Cover image for Vol. 201 Issue 2

January 2004

Volume 201, Issue 2

Pages R1–R4, 175–371

Currently known as: physica status solidi (a)

    1. Electronic structure of shallow impurities in GaN studied via bound exciton magnetooptics (pages 181–189)

      R. Stępniewski, A. Wysmołek and M. Potemski

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303908

    2. Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures (pages 190–194)

      S. Anceau, P. Lefebvre, T. Suski, S. P. Łepkowski, H. Teisseyre, L. H. Dmowski, L. Konczewicz, A. Kaminska, A. Suchocki, H. Hirayama and Y. Aoyagi

      Article first published online: 15 JAN 2004 | DOI: 10.1002/pssa.200303980

    3. Site symmetry of erbium centers in GaN (pages 195–198)

      V. Glukhanyuk, H. Przybylińska, A. Kozanecki and W. Jantsch

      Article first published online: 15 JAN 2004 | DOI: 10.1002/pssa.200303978

    4. Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy (pages 199–202)

      S. Juršėnas, S. Miasojedovas, G. Kurilčik, A. Žukauskas and P. R. Hageman

      Article first published online: 22 DEC 2003 | DOI: 10.1002/pssa.200303909

    5. Self-heating and microwave noise in AlGaN/GaN (pages 203–206)

      L. Ardaravičius, J. Liberis, A. Matulionis, L. F. Eastman, J. R. Shealy and A. Vertiatchikh

      Article first published online: 15 JAN 2004 | DOI: 10.1002/pssa.200303901

    6. In-depth and in-plane profiling of light emission properties of InGaN-based laser diode (pages 207–211)

      M. Godlewski, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, I. Grzegory and S. Porowski

      Article first published online: 17 DEC 2003 | DOI: 10.1002/pssa.200303902

    7. Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers (pages 212–215)

      M. Godlewski, E. Łusakowska, R. Bożek, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge and D. Hommel

      Article first published online: 17 DEC 2003 | DOI: 10.1002/pssa.200303903

    8. Compensation mechanisms in magnesium doped GaN (pages 216–220)

      M. Godlewski, H. Przybylińska, R. Bożek, E. M. Goldys, J. P. Bergman, B. Monemar, I. Grzegory and S. Porowski

      Article first published online: 17 DEC 2003 | DOI: 10.1002/pssa.200303904

    9. Impact of post-growth thermal annealing on emission of InGaN/GaN multiple quantum wells (pages 221–224)

      Yung-Chen Cheng, S. Juršėnas, Shih-Wei Feng, C. C. Yang, Cheng-Ta Kuo and Jian-Shihn Tsang

      Article first published online: 22 DEC 2003 | DOI: 10.1002/pssa.200303905

    10. Thermoelectric and thermal properties of AlInN thin films prepared by reactive radio-frequency sputtering (pages 225–228)

      Shigeo Yamaguchi, Ryohei Izaki, Yasuo Iwamura and Atsushi Yamamoto

      Article first published online: 15 JAN 2004 | DOI: 10.1002/pssa.200303976

    11. Cathodoluminescence properties of zinc oxide nanoparticles (pages 229–234)

      M. R. Phillips, O. Gelhausen and E. M. Goldys

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303977

    12. Ion beam fabricated silicon light emitting diodes (pages 239–244)

      M. A. Lourenço, M. S. A. Siddiqui, G. Shao, R. M. Gwilliam and K. P. Homewood

      Article first published online: 22 DEC 2003 | DOI: 10.1002/pssa.200303913

    13. The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth (pages 245–248)

      A. Goryachko, Y. Yeromenko, K. Henkel, J. Wollweber and D. Schmeißer

      Article first published online: 22 DEC 2003 | DOI: 10.1002/pssa.200303914

    14. Temporal response of CVD diamond detectors to modulated low energy X-ray beams (pages 249–252)

      G. Conte, M. C. Rossi, S. Salvatori, F. Spaziani, Y. Avigal, R. Kalish, P. Ascarelli and D. Trucchi

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303915

    15. Photonic applications of lithium niobate crystals (pages 253–283)

      L. Arizmendi

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303911

    16. Phase relations in the growth of stoichiometric lithium niobate (pages 284–288)

      K. Polgár, Á. Péter and M. Ferriol

      Article first published online: 22 DEC 2003 | DOI: 10.1002/pssa.200303912

    17. Optical performance of Yb3+ in LiNbO3 laser crystal (pages 289–297)

      L. E. Bausá, M.O Ramírez and E. Montoya

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303979

    18. Cr3+ ions in hydrogenated and proton exchanged lithium niobate crystals (pages 298–303)

      A. Kamińska, L. Arizmendi, A. Barcz, E. Łusakowska and A. Suchocki

      Article first published online: 15 JAN 2004 | DOI: 10.1002/pssa.200303916

    19. Elementary energy bands in band structure calculations of some wide-bandgap crystals (pages 304–307)

      M. Sznajder, D. M. Bercha and K. Z. Rushchanskii

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303917

    20. Growth and characterization of AgIn5S8 and CuIn5S8 thin films (pages 308–311)

      Liudmila V. Makhova, I. Konovalov and R. Szargan

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303975

    21. MOVPE growth and in situ characterization of GaN layers on sapphire substrates (pages 312–319)

      H. Hardtdegen, N. Kaluza, R. Schmidt, R. Steins, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov and J.-T. Zettler

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303970

    22. Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy (pages 320–323)

      C. Skierbiszewski, Z. Wasilewski, M. Siekacz, A. Feduniewicz, B. Pastuszka, I. Grzegory, M. Leszczynski and S. Porowski

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303961

    23. Kinetic and strain-driven growth phenomena on Si(001) (pages 324–328)

      C. Schelling, J. Myslivecek, M. Mühlberger, H. Lichtenberger, Z. Zhong, B. Voigtländer, G. Bauer and F. Schäffler

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303966

    24. Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD (pages 329–332)

      M. Halbwax, V. Yam, C. Clerc, Y. Zheng, D. Debarre, Lam. H. Nguyen and D. Bouchier

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303968

    25. Kinetic Monte Carlo simulation of SiC nucleation on Si(111) (pages 333–337)

      A. A. Schmidt, K. L. Safonov, Yu. V. Trushin, V. Cimalla, O. Ambacher and J. Pezoldt

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303962

    26. Modeling carrier dynamics in quantum-dot lasers (pages 338–344)

      A. Markus and A. Fiore

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303965

    27. Quantum dot semiconductor lasers with optical feedback (pages 345–352)

      G. Huyet, D. O'Brien, S. P. Hegarty, J. G. McInerney, A. V. Uskov, D. Bimberg, C. Ribbat, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, A. R. Kovsh, J. K. White, K. Hinzer and A. J. SpringThorpe

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303971

    28. Formation and optical properties of Ge quantum dots selectively grown on patterned Si(001) substrates (pages 353–356)

      Lam H. Nguyen, V. Le Thanh, V. Yam, D. Débarre, M. Halbwax and D. Bouchier

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303967

    29. TEM evaluation of strain and stress in III–V semiconductor epitaxial structures (pages 357–363)

      A. Rocher, M. Cabié, A. Ponchet, A. Arnoult and E. Bedel-Pereira

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303969

    30. Optical properties of GaInNAs/GaAs quantum wells: character of optical transitions and carrier localisation effect (pages 364–367)

      R. Kudrawiec, J. Misiewicz, M. Fisher and A. Forchel

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303963

    31. Raman scattering study of InGaAs/AlAsSb and InGaAs/AlAs/AlAsSb heterostructures (pages 368–371)

      T. Mozume, N. Georgiev and J. Kasai

      Article first published online: 9 JAN 2004 | DOI: 10.1002/pssa.200303964

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