physica status solidi (a)

Cover image for Vol. 202 Issue 4

March 2005

Volume 202, Issue 4

Pages R29–R46, 495–704

    1. Growth and continuous-wave laser operation of disordered crystals of Yb3+:NaLa(WO4)2 and Yb3+:NaLa(MoO4)2 (pages R29–R31)

      J. Liu, J. M. Cano-Torres, C. Cascales, F. Esteban-Betegón, M. D. Serrano, V. Volkov, C. Zaldo, M. Rico, U. Griebner and V. Petrov

      Version of Record online: 1 FEB 2005 | DOI: 10.1002/pssa.200510001

    2. Fabrication of AlGaN/GaN double-insulator metal–oxide–semiconductor high-electron-mobility transistors using SiO2 and SiN as gate insulators (pages R32–R34)

      Krishnan Balachander, Subramaniam Arulkumaran, Y. Sano, Takashi Egawa and Krishnan Baskar

      Version of Record online: 15 FEB 2005 | DOI: 10.1002/pssa.200410002

    3. Efficient focusing with a concave lens based on a photonic crystal with an unusual effective index of refraction (pages R35–R37)

      E. Foca, H. Föll, F. Daschner, V. V. Sergentu, J. Carstensen, S. Frey, R. Knöchel and I. M. Tiginyanu

      Version of Record online: 14 FEB 2005 | DOI: 10.1002/pssa.200510003

    4. Chemical sensitivity in positron annihilation with just one single Ge detector (pages R38–R40)

      Matz Haaks, Torsten E. M. Staab, Kimmo Saarinen and Karl Maier

      Version of Record online: 14 FEB 2005 | DOI: 10.1002/pssa.200510004

    5. Local elastic response of individual grains in lead-free Nb-doped Bi4Ti3O12 piezoelectric ceramics (pages R41–R43)

      H. R. Zeng, H. F. Yu, L. N. Zhang, R. Q. Chu, G. R. Li and Q. R. Yin

      Version of Record online: 15 FEB 2005 | DOI: 10.1002/pssa.200510005

    6. Rhombohedral LSMO films – a unique case of ferroelastic domain formation (pages R44–R46)

      N. Farag, M. Bobeth, W. Pompe, A. E. Romanov and J. S. Speck

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200510006

    7. Processing of novel SiC and group III-nitride based micro- and nanomechanical devices (page 495)

      Ch. Foerster, V. Cimalla, K. Brueckner, V. Lebedev, R. Stephan, M. Hein and O. Ambacher

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssa.200590007

    8. Advanced materials and characterization methods

      Epitaxial Lift-Off for large area thin film III/V devices (pages 501–508)

      J. J. Schermer, P. Mulder, G. J. Bauhuis, M. M. A. J. Voncken, J. van Deelen, E. Haverkamp and P. K. Larsen

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssa.200460410

    9. III–V layer transfer onto silicon and applications (pages 509–515)

      L. Di Cioccio, E. Jalaguier and F. Letertre

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssa.200460411

    10. Crystal growth and epitaxy

      Control of 3C–SiC/Si wafer bending by the “checker-board” carbonization method (pages 524–530)

      T. Chassagne, G. Ferro, H. Haas, H. Mank, A. Leycuras, Y. Monteil, F. Soares, C. Balloud, Ph. Arcade, C. Blanc, H. Peyre, S. Juillaguet and J. Camassel

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460415

    11. Growth and characterization of bulk AlN substrates grown by PVT (pages 531–535)

      M. Bickermann, B. M. Epelbaum, M. Kazan, Z. Herro, P. Masri and A. Winnacker

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssa.200460416

    12. Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE (pages 536–544)

      Z. Bougrioua, M. Azize, P. Lorenzini, M. Laügt and H. Haas

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460417

    13. Ion beam synthesis of 3C–(Si1–xC1–y)Gex+y solid solutions (pages 545–549)

      P. Weih, Th. Stauden, G. Ecke, S. Shokhovets, Ch. Zgheib, M. Voelskow, W. Skorupa, O. Ambacher and J. Pezoldt

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssa.200460418

    14. Control of Al-doping in 4H–SiC homo-epitaxial layers grown with a HMDS/TMA/P mixture (pages 550–554)

      C. Sartel, V. Soulière, M. Zielinski, Y. Monteil, J. Camassel, L. Smith and S. Rushworth

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460419

    15. Investigation of copper doped InP single crystals grown by Czochralski technique for use in X-ray detection (pages 555–560)

      K. Zdansky, J. Zavadil, L. Pekarek, V. Gorodynskyy and H. Kozak

      Version of Record online: 7 FEB 2005 | DOI: 10.1002/pssa.200460420

    16. Defect morphology and strain of CVD grown 3C–SiC layers: effect of the carbonization process (pages 561–565)

      D. Méndez, A. Aouni, F. M. Morales, F. J. Pacheco, D. Araújo, E. Bustarret, G. Ferro and Y. Monteil

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460421

    17. Structural, optical and electrical characterizations

      Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique (pages 566–571)

      K. Jarašiūnas, T. Malinauskas, R. Aleksiejūnas, M. Sūdžius, E. Frayssinet, B. Beaumont, J.-P. Faurie and P. Gibart

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460430

    18. Characterization of deep levels in n-GaN by combined capacitance transient techniques (pages 572–577)

      M. A. Py, Ch. Zellweger, V. Wagner, J.-F. Carlin, H.-J. Buehlmann and M. Ilegems

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460431

    19. Defect-selective etching of SiC (pages 578–583)

      J. L. Weyher, S. Lazar, J. Borysiuk and J. Pernot

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460432

    20. Sensitivity and measurement errors of Makyoh topography (pages 584–589)

      F. Riesz and I. E. Lukács

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460433

    21. Terahertz investigation of high quality indium nitride epitaxial layers (pages 590–592)

      Y. M. Meziani, B. Maleyre, M. L. Sadowski, S. Ruffenach, O. Briot and W. Knap

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460434

    22. Control of epitaxial layers grown on 4H–SiC: from 3C microcrystalline inclusions to type II quantum well structures (pages 593–597)

      S. Juillaguet, C. Balloud, V. Soulière, C. Sartel, J. Camassel and Y. Monteil

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460435

    23. Optical mapping of aluminum doped p-type SiC wafers (pages 598–601)

      P. J. Wellmann, T. Straubinger, U. Künecke, R. Müller, S. A. Sakwe, M. Pons, A. Thuaire, A. Crisci, M. Mermoux, L. Auvray and J. Camassel

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460436

    24. Electron transport properties of AlGaAs/GaAs heterostructure containing a d-doping in the quantum well (pages 602–608)

      S. Rekaya, L. Bouzaïene, L. Sfaxi, M. Hjiri, S. Contreras, J. L. Robert and H. Maaref

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460437

    25. Free energy and capture cross section of the E2 trap in n-type GaN (pages 609–613)

      J. Pernot, C. Ulzhöfer, P. Muret, B. Beaumont and P. Gibart

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460438

    26. Donor ionization energy in bulk GaAs for different donor concentrations and magnetic fields (pages 614–618)

      I. Bisotto, B. Jouault, A. Raymond, W. Zawadzki and G. Strasser

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460439

    27. Magnetic field effects on the near field spectra of quantum dots (pages 619–624)

      Anna Zora, Constantinos Simserides and Georgios Triberis

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460440

    28. Optoelectronic materials and devices

      Cathodoluminescence degradation signatures of AlGaAs-based high-power laser arrays (pages 625–630)

      M. Pommiès, M. Avella, E. Cánovas, J. Jiménez, M. Oudart, P. Resneau and J. Nagle

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460452

    29. Vertical Cavity Surface Emitting Laser sources for gas detection (pages 631–635)

      L. Cerutti, A. Garnache, A. Ouvrard, M. Garcia and F. Genty

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460453

    30. Defect tuning of GaAs doping superlattices by hydrogen ion implantation (pages 636–641)

      D. J. Brink, K. M. Haile and H. W. Kunert

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460454

    31. Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate (pages 642–646)

      S. Anceau, P. Lefebvre, T. Suski, L. Konczewicz, H. Hirayama and Y. Aoyagi

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssa.200460455

    32. Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range (pages 647–651)

      H. Aït-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joullié and P. Christol

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460456

    33. Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1–xN quantum well structure (pages 652–655)

      D. Coquillat, J. Torres, M. Le Vassor d'Yerville, R. Legros, J. P. Lascaray, C. Liu, I. M. Watson, R. W. Martin, H. M. H. Chong and R. M. De La Rue

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460457

    34. Electronic devices and processing

      Terahertz generation by plasma waves in nanometer gate high electron mobility transistors (pages 656–659)

      J. Łusakowski, F. Teppe, N. Dyakonova, Y. M. Meziani, W. Knap, T. Parenty, S. Bollaert, A. Cappy, V. Popov and M. S. Shur

      Version of Record online: 18 FEB 2005 | DOI: 10.1002/pssa.200460468

    35. Forward-bias degradation in 4H–SiC p+nn+ diodes: Influence of the mesa etching (pages 660–664)

      N. Camara, A. Thuaire, E. Bano and K. Zekentes

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460469

    36. Processing of novel SiC and group III-nitride based micro- and nanomechanical devices (pages 671–676)

      Ch. Foerster, V. Cimalla, K. Brueckner, V. Lebedev, R. Stephan, M. Hein and O. Ambacher

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460471

    37. High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors (pages 677–679)

      N. Dyakonova, S. L. Rumyantsev, M. S. Shur, Y. Meziani, F. Pascal, A. Hoffmann, Q. Fareed, X. Hu, Yu. Bilenko, R. Gaska and W. Knap

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460472

    38. Technical aspects of 〈equation image〉 4H–SiC MOSFET processing (pages 680–685)

      C. Blanc, D. Tournier, V. Soulière, S. Juillaguet, S. Contreras, M. Zielinski, P. Godignon, Y. Monteil and Jean Camassel

      Version of Record online: 24 FEB 2005 | DOI: 10.1002/pssa.200460473

    39. Full wafer size investigation of N+ and P+ co-implanted layers in 4H–SiC (pages 698–704)

      S. Blanqué, J. Lyonnet, R. Pérez, P. Terziyska, S. Contreras, P. Godignon, N. Mestres, J. Pascual and J. Camassel

      Version of Record online: 4 MAR 2005 | DOI: 10.1002/pssa.200460476

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