physica status solidi (a)

Cover image for Vol. 202 Issue 5

April 2005

Volume 202, Issue 5

Pages R47–R55, 707–948

    1. Imprinting magnetic memory cells in molecular based NiL2(C2H5OH)2 heterospin crystals (pages R47–R49)

      R. Morgunov, S. Gudoshnikov, Yu. Ossypian, V. Ovcharenko, R. Sagdeev, V. Skomarovskii and Y. Tanimoto

      Article first published online: 28 FEB 2005 | DOI: 10.1002/pssa.200510008

    2. Organic photodiodes on newspaper (pages R50–R52)

      B. Lamprecht, R. Thünauer, M. Ostermann, G. Jakopic and G. Leising

      Article first published online: 8 MAR 2005 | DOI: 10.1002/pssa.200510010

    3. Multiplet luminescence of sulfur implanted silica – SiO2:S (pages R53–R55)

      Roushdey Salh, B. Schmidt and H.-J. Fitting

      Article first published online: 17 MAR 2005 | DOI: 10.1002/pssa.200510012

    4. High spatial resolution micro-Raman temperature measurements of nitride devices (FETs and light emitters) (page 707)

      M. Kuball, J. W. Pomeroy, S. Rajasingam, A. Sarua, M. J. Uren, T. Martin, A. Lell and V. Härle

      Article first published online: 4 APR 2005 | DOI: 10.1002/pssa.200590008

    5. Bulk growth

      Positron annihilation study of HVPE grown thick GaN layers (pages 713–717)

      M. Misheva, H. Larsson, D. Gogova and B. Monemar

      Article first published online: 11 MAR 2005 | DOI: 10.1002/pssa.200461420

    6. Vapor phase epitaxy

      A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching (pages 718–721)

      Y. T. Moon, Y. Fu, F. Yun, S. Dogan, M. Mikkelson, D. Johnstone and H. Morkoç

      Article first published online: 8 MAR 2005 | DOI: 10.1002/pssa.200461456

    7. Dislocation density reduction in GaN using porous SiN interlayers (pages 722–726)

      Ashutosh Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, Y. Fu, Y. T. Moon, F. Yun and H. Morkoç

      Article first published online: 7 MAR 2005 | DOI: 10.1002/pssa.200461486

    8. MOVPE homoepitaxial growth on vicinal GaN(0001) substrates (pages 727–731)

      Xueping Xu, Robert P. Vaudo, Jeffery Flynn, Joe Dion and George R. Brandes

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461521

    9. White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy (pages 732–738)

      R. I. Barabash, G. E. Ice, W. Liu, S. Einfeldt, D. Hommel, A. M. Roskowski and R. F. Davis

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461364

    10. Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure (pages 739–743)

      A. Kakanakova-Georgieva, I. G. Ivanov, C. Hallin and E. Janzén

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461417

    11. Uniform III-nitride growth in single wafer horizontal MOVPE reactors (pages 744–748)

      H. Hardtdegen, N. Kaluza, R. Steins, P. Javorka, K. Wirtz, A. Alam, T. Schmitt and R. Beccard

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461468

    12. Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates (pages 749–753)

      F. Yun, Y. Fu, Y. T. Moon, Ü. Özgür, J. Q. Xie, S. Doğan, H. Morkoç, C. K. Inoki, T. S. Kuan, L. Zhou and D. J. Smith

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461552

    13. Molecular beam epitaxy

      Epitaxial growth of Fe on GaN(0001): structural and magnetic properties (pages 754–757)

      R. Calarco, R. Meijers, N. Kaluza, V. A. Guzenko, N. Thillosen, Th. Schäpers, H. Lüth, M. Fonin, S. Krzyk, R. Ghadimi, B. Beschoten and G. Güntherodt

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461297

    14. Improvement of crystalline quality of GaPN layers grown by RF-plasma MBE with ion collector (pages 758–762)

      A. Utsumi, Y. Furukawa, H. Yonezu, Y. Yoshizumi, Y. Morita and A. Wakahara

      Article first published online: 15 MAR 2005 | DOI: 10.1002/pssa.200461529

    15. Indium nitride

      Resonant Raman spectroscopy on InN (pages 763–767)

      M. Kuball, J. W. Pomeroy, M. Wintrebert-Fouquet, K. S. A. Butcher, Hai Lu, W. J. Schaff, T. V. Shubina, S. V. Ivanov, A. Vasson and J. Leymarie

      Article first published online: 7 FEB 2005 | DOI: 10.1002/pssa.200461305

    16. Temperature dependence of carrier lifetimes in InN (pages 768–772)

      Fei Chen, A. N. Cartwright, H. Lu and W. J. Schaff

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461501

    17. Polarity determination of InN by wet etching (pages 773–776)

      Daisuke Muto, Tsutomu Araki, Hiroyuki Naoi, Fumie Matsuda and Yasushi Nanishi

      Article first published online: 15 MAR 2005 | DOI: 10.1002/pssa.200461439

    18. Interfacial structure of MBE grown InN on GaN (pages 777–780)

      Th. Kehagias, E. Iliopoulos, A. Delimitis, G. Nouet, E. Dimakis, A. Georgakilas and Ph. Komninou

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461343

    19. Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE (pages 781–784)

      P. Ruterana, M. Morales, F. Gourbilleau, P. Singh, M. Drago, T. Schmidtling, U. W. Pohl and W. Richter

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461444

    20. Defects, structural properties, and electrical characterization

      Piezoresponse force microscopy for imaging of GaN surfaces (pages 785–789)

      R. Calarco, R. Meijers, T. Stoica and H. Lüth

      Article first published online: 16 MAR 2005 | DOI: 10.1002/pssa.200461298

    21. Time-resolved reflectivity studies of coherent longitudinal acoustic phonon pulses in bulk III-nitride semiconductors (pages 790–794)

      M. Wraback, H. Shen, A. V. Sampath, C. J. Collins, G. A. Garrett and W. L. Sarney

      Article first published online: 15 MAR 2005 | DOI: 10.1002/pssa.200461506

    22. Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD (pages 795–798)

      D. Lu, D. I. Florescu, D. S. Lee, J. C. Ramer, A. Parekh, V. Merai, S. Li, J. J. Gardner, M. J. Begarney and E. A. Armour

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461503

    23. Atomic simulations and HRTEM observations of a Σ 18 tilt grain boundary in GaN (pages 799–803)

      J. Kioseoglou, A. Béré, Ph. Komninou, G. P. Dimitrakopulos, G. Nouet, E. Iliopoulos, A. Serra and Th. Karakostas

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461419

    24. Contacts and processing

      Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 × 1 surfaces (pages 804–807)

      D. Orani, M. Piccin, S. Rubini, E. Pelucchi, B. Bonanni, A. Franciosi, A. Passaseo, R. Cingolani and A. Khan

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461586

    25. Transport properties

      Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels (pages 808–811)

      L. Ardaravičius, M. Ramonas, O. Kiprijanovic, J. Liberis, A. Matulionis, L. F. Eastman, J. R. Shealy, X. Chen and Y. J. Sun

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461618

    26. Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG (pages 812–815)

      A. Wells, M. J. Uren, R. S. Balmer, K. J. Nash, T. Martin and M. Missous

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461352

    27. Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structures (pages 816–819)

      S. A. Vitusevich, M. V. Petrychuk, S. V. Danylyuk, A. M. Kurakin, N. Klein and A. E. Belyaev

      Article first published online: 8 MAR 2005 | DOI: 10.1002/pssa.200461461

    28. Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures (pages 820–823)

      K. Jarašiūnas, R. Aleksiejūnas, T. Malinauskas, M. Sūdžius, S. Miasojedovas, S. Juršėnas, A. Žukauskas, R. Gaska, J. Zhang, M. S. Shur, J. W. Yang, E. Kuokštis and M. A. Khan

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461351

    29. Electronic devices

      High spatial resolution micro-Raman temperature measurements of nitride devices (FETs and light emitters) (pages 824–831)

      M. Kuball, J. W. Pomeroy, S. Rajasingam, A. Sarua, M. J. Uren, T. Martin, A. Lell and V. Härle

      Article first published online: 7 FEB 2005 | DOI: 10.1002/pssa.200461294

    30. High-current AlInN/GaN field effect transistors (pages 832–836)

      A. Dadgar, M. Neuburger, F. Schulze, J. Bläsing, A. Krtschil, I. Daumiller, M. Kunze, K.-M. Günther, H. Witte, A. Diez, E. Kohn and A. Krost

      Article first published online: 8 MAR 2005 | DOI: 10.1002/pssa.200461466

    31. Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering (pages 837–840)

      T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, D. Buttari, S. P. DenBaars and U. K. Mishra

      Article first published online: 15 MAR 2005 | DOI: 10.1002/pssa.200461563

    32. Post-annealing effects on trapping behaviors in AlGaN/GaN HEMTs (pages 841–845)

      H. Kim, J. Lee and W. Lu

      Article first published online: 7 MAR 2005 | DOI: 10.1002/pssa.200461555

    33. Optical properties

      Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN (pages 846–849)

      G. A. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, J. S. Speck, S. Keller, S. Nakamura and S. P. DenBaars

      Article first published online: 11 MAR 2005 | DOI: 10.1002/pssa.200461599

    34. Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxy (pages 850–853)

      J. Ibáñez, D. Pastor, R. Cuscó, L. Artús, M. Avella, J. Jiménez, S. V. Novikov and C. T. Foxon

      Article first published online: 7 FEB 2005 | DOI: 10.1002/pssa.200461411

    35. Optical properties of lattice matched InxGa1–xP1–yNy heteroepitaxial layers on GaP (pages 854–858)

      T. Imanishi, A. Wakahara, S. M. Kim, H. Yonezu and Y. Furukawa

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461434

    36. Improvement of photoluminescence by Si delta-doping in GaN barrier layer of GaN/InxGa1–xN multi-quantum wells (pages 859–862)

      Min-Ki Kwon, Il-Kyu Park, Sung-Ho Beak, Ja-Yeon Kim and Seong-Ju Park

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461576

    37. Enhancement effect of Tb-related luminescence in AlxGa1–xN with the AlN molar fraction 0 ≤ x ≤ 1 (pages 863–867)

      A. Wakahara, Y. Nakanishi, T. Fujiwara, A. Yoshida, T. Ohshima and T. Kamiya

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461430

    38. Optical devices

      InGaN multiple quantum well lasers grown by MBE (pages 868–874)

      J. Heffernan, M. Kauer, K. Johnson, C. Zellweger, S. E. Hooper and V. Bousquet

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200461407

    39. Structure of extended defects

      The effect of charge on kink migration at 90° partial dislocations in SiC (pages 877–882)

      A. T. Blumenau, T. A. G. Eberlein, R. Jones, S. Öberg, T. Frauenheim and P. R. Briddon

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200460504

    40. Electronic and optical properties of precipitates and dislocations in semiconductors

      Structural and electronic properties of thin fluorite-structure NiSi2, CoSi2 and FeSi2 interfaces and precipitates in Si (pages 883–888)

      M. G. Wardle, J. P. Goss, P. R. Briddon and R. Jones

      Article first published online: 8 MAR 2005 | DOI: 10.1002/pssa.200460508

    41. Defect states in Czochalski p-type silicon: the role of oxygen and dislocations (pages 889–895)

      A. Castaldini, D. Cavalcoli, A. Cavallini and S. Pizzini

      Article first published online: 11 MAR 2005 | DOI: 10.1002/pssa.200460510

    42. Silicon light-emitting diodes based on dislocation-related luminescence (pages 901–910)

      V. Kveder, M. Badylevich, W. Schröter, M. Seibt, E. Steinman and A. Izotov

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200460512

    43. Interaction of impurities with dislocations

      Structural and electrical properties of metal impurities at dislocations in silicon (pages 911–920)

      M. Seibt, V. Kveder, W. Schröter and O. Voß

      Article first published online: 15 MAR 2005 | DOI: 10.1002/pssa.200460515

    44. Decay of oxygen solid solution in plastically deformed silicon (pages 921–925)

      N. Yarykin and V. I. Vdovin

      Article first published online: 8 MAR 2005 | DOI: 10.1002/pssa.200460519

    45. Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments (pages 926–930)

      J. D. Murphy, A. Giannattasio, S. Senkader, R. J. Falster and P. R. Wilshaw

      Article first published online: 7 MAR 2005 | DOI: 10.1002/pssa.200460532

    46. Crystal growth and grown-in defects

      Defects in germanium-doped Czochralski silicon (pages 931–938)

      Deren Yang

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200460520

    47. Fracture and plasticity

    48. On the nucleation of shuffle dislocations in Si (pages 944–948)

      J. Rabier and J. L. Demenet

      Article first published online: 31 MAR 2005 | DOI: 10.1002/pssa.200460543

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