physica status solidi (a)

Cover image for Vol. 203 Issue 1

January 2006

Volume 203, Issue 1

Pages R1–R3, 3–193

    1. Magnetic studies of the carbothermal effect on LiFePO4 (pages R1–R3)

      A. Ait-Salah, K. Zaghib, A. Mauger, F. Gendron and C. M. Julien

      Version of Record online: 14 DEC 2005 | DOI: 10.1002/pssa.200521452

    2. Quantitative electron microscopy of InN–GaN alloys (page 3)

      T. Bartel, J. R. Jinschek, B. Freitag, P. Specht and C. Kisielowski

      Version of Record online: 3 JAN 2006 | DOI: 10.1002/pssa.200690002

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      Editorial: phys. stat. sol. (a) 203/1 (pages 7–8)

      Martin Stutzmann

      Version of Record online: 3 JAN 2006 | DOI: 10.1002/pssa.200690003

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    5. Indium Nitride and Indium Rich Related Alloys: Challenges and Opportunities (pages 11–12)

      M. Leszczynski, P. Ruterana, M. Stutzmann and C. Wood

      Version of Record online: 3 JAN 2006 | DOI: 10.1002/pssa.200690001

  1. Original Papers

    1. Top of page
    2. Original Papers
    3. Original Papers
    1. Band Structure

      Plasmonic effects in InN-based structures with nano-clusters of metallic indium (pages 13–24)

      T. V. Shubina, S. V. Ivanov, V. N. Jmerik, A. A. Toropov, A. Vasson, J. Leymarie and P. S. Kop'ev

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563520

    2. Electron band structure and optical properties of InN and related alloys (pages 25–34)

      D. Alexandrov, S. Butcher and T. Tansley

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563501

    3. Properties, Optical, Electronic

      Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys (pages 42–49)

      R. Goldhahn, P. Schley, A. T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu and W. J. Schaff

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563507

    4. Photoluminescence of n-InN with low electron concentrations (pages 50–58)

      Albert Klochikhin, Valery Davydov, Vadim Emtsev, Alexey Sakharov, Vladimir Kapitonov, Boris Andreev, Hai Lu and William J. Schaff

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563512

    5. Surface band bending at nominally undoped and Mg-doped InN by Auger Electron Spectroscopy (pages 59–65)

      V. Cimalla, M. Niebelschütz, G. Ecke, V. Lebedev, O. Ambacher, M. Himmerlich, S. Krischok, J. A. Schaefer, H. Lu and W. J. Schaff

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563505

    6. Stoichiometry effects and the Moss–Burstein effect for InN (pages 66–74)

      K. S. A. Butcher, H. Hirshy, R. M. Perks, M. Wintrebert-Fouquet and P. P-T. Chen

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563504

    7. Recombination processes with and without momentum conservation in degenerate InN (pages 75–79)

      E. Valcheva, S. Alexandrova, S. Dimitrov, H. Lu and W. J. Schaff

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563521

    8. Superconductivity of InN (pages 80–84)

      T. Inushima, N. Kato, T. Takenobu and M. Motokawa

      Version of Record online: 20 DEC 2005 | DOI: 10.1002/pssa.200563510

    9. Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces (pages 85–92)

      T. D. Veal, L. F. J. Piper, M. R. Phillips, M. H. Zareie, Hai Lu, W. J. Schaff and C. F. McConville

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563522

    10. Growth

      Growth and properties of InN, InGaN, and InN/InGaN quantum wells (pages 93–101)

      H. Naoi, M. Kurouchi, D. Muto, S. Takado, T. Araki, T. Miyajima, H. Na and and Y. Nanishi

      Version of Record online: 3 JAN 2006 | DOI: 10.1002/pssa.200563526

    11. InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy (pages 102–105)

      E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki and N. T. Pelekanos

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563509

    12. Growth of N-polarity InN by ArF-laser assisted MOVPE (pages 112–115)

      A. Yamamoto, K. Kasashima, M. Miyanishi and A. Hashimoto

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563524

    13. MOVPE growth of InN with ammonia on sapphire (pages 116–126)

      M. Drago, P. Vogt and W. Richter

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563527

    14. A comparative study on MOVPE InN films grown on 3c-SiC/Si(111) and sapphire (pages 127–130)

      T. Kobayashi, M. S. Cho, N. Sawazaki, A. Hashimoto, A. Yamamoto and Y. Ito

      Version of Record online: 20 DEC 2005 | DOI: 10.1002/pssa.200563513

    15. Mass flow and reaction analysis of the growth of GaN by HVPE (pages 131–134)

      P. Kempisty, I. Grzegory, M. Boćkowski , S. Krukowski, B. Łucznik, B. Pastuszka and S. Porowski

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563514

    16. Inhomogeneities in MOVPE InN (pages 135–141)

      Akio Yamamoto, Hiroshi Miwa, Wen Jun Wang and Akihiro Hashimoto

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563523

    17. Structure, properties, devices

      Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers (pages 142–148)

      R. I. Barabash, O. M. Barabash, G. E. Ice, C. Roder, S. Figge, S. Einfeldt, D. Hommel, T. M. Katona, J. S. Speck, S. P. DenBaars and R. F. Davis

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563503

    18. Fields of deformation anisotropy exploration in multilayered (In,Ga)As/GaAs structures by high-resolution X-ray scattering (pages 154–157)

      O. Yefanov, V. Kladko, O. Gudymenko, V. Strelchuk, Yu. Mazur, Zh. Wang and G. Salamo

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563525

    19. Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers (pages 158–161)

      P. Ruterana, M. Abouzaid, F. Gloux, W. Maciej, J. L. Doualan, M. Drago, T. Schmidtling, U. W. Pohl and W. Richter

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563518

    20. Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001) (pages 162–166)

      A. Delimitis, P. Gladkov, Ph. Komninou, Th. Kehagias, J. Arvanitidis, S. Ves, M. Katsikini, E. Dimakis and A. Georgakilas

      Version of Record online: 20 DEC 2005 | DOI: 10.1002/pssa.200563506

    1. Quantitative electron microscopy of InN–GaN alloys (pages 167–175)

      T. Bartel, J. R. Jinschek, B. Freitag, P. Specht and C. Kisielowski

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563511

  2. Original Papers

    1. Top of page
    2. Original Papers
    3. Original Papers
    1. Structure, properties, devices

    2. III-Nitrides semiconductor compounds for microwave devices (pages 185–193)

      M. A. di Forte-Poisson, M. Magis, N. Sarazin, M. Tordjman and J. di Persio

      Version of Record online: 2 JAN 2006 | DOI: 10.1002/pssa.200563517

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