physica status solidi (a)

Cover image for Vol. 203 Issue 7

May 2006

Volume 203, Issue 7

Pages 1493–1881

    1. Optimization of AlGaN/GaN HEMTs for high frequency operation (page 1493)

      T. Palacios, Y. Dora, A. Chakraborty, C. Sanabria, S. Keller, S. P. DenBaars and U. K. Mishra

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200690013

  1. Original Papers

    1. Top of page
    2. Original Papers
    3. Original Papers
    1. FMR investigations of half-metallic ferromagnets (pages 1503–1512)

      B. Rameev, F. Yildiz, S. Kazan, B. Aktas, A. Gupta, L. R. Tagirov, D. Rata, D. Buergler, P. Gruenberg, C. M. Schneider, S. Kämmerer, G. Reiss and A. Hütten

      Article first published online: 5 APR 2006 | DOI: 10.1002/pssa.200563103

    2. Influence of substrate treatment on the growth morphology and magnetic anisotropy of epitaxial CrO2 films (pages 1513–1520)

      Guo-Xing Miao, Gang Xiao and Arunava Gupta

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200563108

    3. Ferromagnetic resonance study of iron implanted PET foils (pages 1525–1532)

      C. Okay, B. Z. Rameev, R. I. Khaibullin, M. Okutan, F. Yildiz, V. N. Popok and B. Aktas

      Article first published online: 5 APR 2006 | DOI: 10.1002/pssa.200563118

    4. EPR study of paramagnetic Fe3+ centers in iron-implanted TiO2 rutile (pages 1533–1538)

      S. Güler, B. Rameev, R. I. Khaibullin, H. Bayrakdar and B. Aktaş

      Article first published online: 5 APR 2006 | DOI: 10.1002/pssa.200563119

    5. FMR studies of bilayer Co90Fe10/Ni81Fe19, Ni81Fe19/Co90Fe10 and monolayer Ni81Fe19 thin films (pages 1539–1544)

      S. Güner, O. Yalçın, S. Kazan, F. Yıldız and R. Şahingöz

      Article first published online: 30 MAR 2006 | DOI: 10.1002/pssa.200563120

    6. Magnetoresistive effect and impedance spectroscopy of Co-implanted polyimide (pages 1545–1549)

      V. N. Popok, M. G. Lukashevich, N. I. Gorbachuk, V. B. Odzhaev, R. I. Khaibullin and I. B. Khaibullin

      Article first published online: 5 APR 2006 | DOI: 10.1002/pssa.200563121

    7. Gd3+ and Eu2+ local environment in Ca1–xEuxB6 (0.0001 ≤ x ≤ 0.30) and Ca1–xGdxB6 (0.0001 ≤ x ≤ 0.01) (pages 1550–1555)

      R. R. Urbano, P. G. Pagliuso, C. Rettori, P. Schlottmann, Z. Fisk, B. Chapler and S. B. Oseroff

      Article first published online: 3 MAY 2006 | DOI: 10.1002/pssa.200563125

    8. Permanent magnet systems with strong stray magnetic fields and very high gradients for material separation (pages 1556–1560)

      E. I. Il'yashenko, V. A. Glebov, A. V. Glebov, A. T. Skjeltorp and T. H. Johansen

      Article first published online: 5 APR 2006 | DOI: 10.1002/pssa.200563128

    9. Magnetic study of Hitperm alloys (Fe0.5Co0.5)1–xyzMxByCuz (M = Hf, Zr, Nb) (pages 1561–1566)

      M. Pękała, M. Kowalczyk and T. Kulik

      Article first published online: 5 APR 2006 | DOI: 10.1002/pssa.200563129

    10. Anisotropic FMR-linewidth of triple-domain Fe layers on hexagonal GaN(0001) (pages 1567–1572)

      M. Buchmeier, D. E. Bürgler, P. A. Grünberg, C. M. Schneider, R. Meijers, R. Calarco, C. Raeder and M. Farle

      Article first published online: 5 APR 2006 | DOI: 10.1002/pssa.200563130

    11. FMR study of ultrahigh vacuum e-beam evaporated Co23Cu77 nanogranular films: Magnetotransport properties (pages 1573–1579)

      R. Mustafa Öksüzoglu, Nuh Yalcın, Bekir Aktas and Hartmut Fuess

      Article first published online: 5 APR 2006 | DOI: 10.1002/pssa.200563131

    12. EPR study of the structural phase transitions in Fe3+ doped TlInS2 (pages 1580–1585)

      F. A. Mikailov, S. Kazan, B. Z. Rameev, M. Acikgoz and B. Aktaş

      Article first published online: 6 APR 2006 | DOI: 10.1002/pssa.200563122

    13. Bulk and surface spin excitations in thin films of manganites (pages 1586–1594)

      P. Aleshkevych, M. Baran, V. Dyakonov, R. Szymczak, H. Szymczak, K. Baberschke, J. Lindner and K. Lenz

      Article first published online: 3 MAY 2006 | DOI: 10.1002/pssa.200563132

    14. Surface effects on magnetic properties of superparamagnetic magnetite nanoparticles (pages 1595–1601)

      Y. Köseoğlu, H. Kavas and and B. Aktaş

      Article first published online: 27 APR 2006 | DOI: 10.1002/pssa.200563104

    15. Growth

      Strain-relaxation in NH3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates (pages 1603–1606)

      T. Koyama, M. Sugawara, Y. Uchinuma, J. F. Kaeding, R. Sharma, T. Onuma, S. Nakamura and S. F. Chichibu

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565289

    16. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation (pages 1607–1611)

      Maria Losurdo, Maria M. Giangregorio, Giovanni Bruno, Tong-Ho Kim, Soojeong Choi and April Brown

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565154

    17. High-nitrogen-content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHy (pages 1612–1617)

      S. Sanorpim, F. Nakajima, W. Ono, R. Katayama and K. Onabe

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565240

    18. Progress in MOVPE growth of crack-free AlGaN based Bragg reflectors on Si(111) (pages 1618–1621)

      M. B. Charles, Y. Zhang, M. J. Kappers and C. J. Humphreys

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565348

    19. InN growth on sapphire using different nitridation procedures (pages 1622–1625)

      M. Drago, C. Werner, M. Pristovsek, U. W. Pohl and W. Richter

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565414

    20. Microstructure of thick AlN grown on sapphire by high-temperature MOVPE (pages 1626–1631)

      M. Imura, K. Nakano, T. Kitano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi and A. Bandoh

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565401

    21. Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates (pages 1632–1635)

      K. Nakano, M. Imura, G. Narita, T. Kitano, Y. Hirose, N. Fujimoto, N. Okada, T. Kawashima, K. Iida, K. Balakrishnan, M. Tsuda, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565389

    22. Atomic structure of pyramidal defects in GaN:Mg: Influence of annealing (pages 1636–1640)

      Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov, M. O'Keefe, S. Hautakangas, K. Saarinen, J. A. Freitas and R. L. Henry

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565458

    23. MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations (pages 1641–1644)

      F. Nakajima, S. Sanorpim, W. Ono, R. Katayama and K. Onabe

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565398

    24. New method for the in situ determination of AlxGa1–xN composition in MOVPE by real-time optical reflectance (pages 1645–1649)

      H. Hardtdegen, N. Kaluza, Z. Sofer, Y. S. Cho, R. Steins, H. L. Bay, Y. Dikme, H. Kalisch, R. H Jansen, M. Heuken, A. Strittmatter, L. Reißmann, D. Bimberg and J.-T. Zettler

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565313

    25. Electrical characterization of Si-ion implanted AlxGa1–xN annealed at lower temperatures (pages 1650–1653)

      Mee-Yi Ryu, Y. K. Yeo, T. W. Zens, M. A. Marciniak, R. L. Hengehold and T. Steiner

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565194

    26. Crystallization of GaN by HVPE on pressure grown seeds (pages 1654–1657)

      I. Grzegory, B. Lucznik, M. Bockowski, B. Pastuszka, G. Kamler, G. Nowak, M. Krysko, S. Krukowski and S. Porowski

      Article first published online: 3 MAY 2006 | DOI: 10.1002/pssa.200565296

    27. N-type doping of HVPE-grown GaN using dichlorosilane (pages 1658–1662)

      E. Richter, Ch. Hennig, U. Zeimer, L. Wang, M. Weyers and G. Tränkle

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565420

    28. Characterization of free standing GaN grown by HVPE on a LiAlO2 substrate (pages 1663–1666)

      Lijun Wang, U. Zeimer, E. Richter, Ch. Hennig, M. Herms and M. Weyers

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565136

    29. Development of native, single crystal AlN substrates for device applications (pages 1667–1671)

      L. J. Schowalter, S. B. Schujman, W. Liu, M. Goorsky, M. C. Wood, J. Grandusky and F. Shahedipour-Sandvik

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565385

    30. Strain in a -plane GaN layers grown on r -plane sapphire substrates (pages 1672–1675)

      C. Roder, S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, B. A. Haskell, P. T. Fini, J. S. Speck and S. Nakamura

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565447

    31. Morphology and microstructure of a -plane GaN layers grown by MOVPE and by low pressure solution growth (LPSG) (pages 1676–1680)

      S. Hussy, E. Meissner, B. Birkmann, I. Brauer, J. Off, F. Scholz, H. P. Strunk and G. Müller

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565261

    32. Electron concentration and mobility profiles in InN layers grown by MBE (pages 1681–1685)

      B. Arnaudov, T. Paskova, S. Evtimova, B. Monemar, H. Lu and W. J. Schaff

      Article first published online: 3 MAY 2006 | DOI: 10.1002/pssa.200565265

    33. Self-regulating mechanism of InN growth on GaN(0001) by molecular beam epitaxy; from nanostructures to films (pages 1686–1690)

      E. Dimakis, E. Iliopoulos, K. Tsagaraki and A. Georgakilas

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565404

    34. High-quality InN grown on KOH wet etched N-polar InN template by RF-MBE (pages 1691–1695)

      D. Muto, H. Naoi, T. Araki, S. Kitagawa, M. Kurouchi, H. Na and Y. Nanishi

      Article first published online: 3 MAY 2006 | DOI: 10.1002/pssa.200565321

    35. Non-catalyst growth and characterization of a -plane AlGaN nanorods (pages 1696–1699)

      Mikhail E. Gaevski, Wenhong Sun, Jinwei Yang, Vinod Adivarahan, Ajay Sattu, Irina Mokina, Maxim Shatalov, Grigory Simin and M. Asif Khan

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565421

    36. Fabrication of GaN dot structures on Si substrates by droplet epitaxy (pages 1700–1703)

      Toshiyuki Kondo, Koji Saitoh, Yo Yamamoto, Takahiro Maruyama and Shigeya Naritsuka

      Article first published online: 3 MAY 2006 | DOI: 10.1002/pssa.200565212

    37. In-situ and real-time monitoring of MOCVD growth of III-nitrides by simultaneous multi-wavelength-ellipsometry and X-ray-diffraction (pages 1704–1707)

      C. Simbrunner, K. Schmidegg, A. Bonanni, A. Kharchenko, J. Bethke, J. Woitok, K. Lischka and H. Sitter

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565137

    38. Crystal quality and growth evolution of aluminum nitride on silicon carbide (pages 1708–1711)

      Craig G. Moe, Yuan Wu, Stacia Keller, James S. Speck, Steven P. DenBaars and David Emerson

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565388

    39. Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique (pages 1712–1715)

      Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau and K. J. Chen

      Article first published online: 3 MAY 2006 | DOI: 10.1002/pssa.200565102

    40. Analysis of TMGa/NH3/H2 reaction system in GaN-MOVPE growth by computational simulation (pages 1716–1719)

      A. Hirako, S. Koiso and K. Ohkawa

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565211

    41. LPE growth of AlN from Cu–Al–Ti solution under nitrogen atmosphere (pages 1720–1723)

      K. Kamei, S. Inoue, Y. Shirai, T. Tanaka, N. Okada and A. Yauchi

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565133

    42. Structural properties

      Structural analysis of (Ga,Mn)N epilayers and self-organized dots using MeV ion channeling (pages 1724–1728)

      S. Kuroda, S. Marcet, E. Bellet-Amalric, J. Cibert, H. Mariette, S. Yamamoto, T. Sakai, T. Ohshima and H. Itoh

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565396

    43. Misfit dislocations in In-rich InGaN/GaN quantum well structures (pages 1729–1732)

      P. M. F. J. Costa, R. Datta, M. J. Kappers, M. E. Vickers, C. J. Humphreys, D. M. Graham, P. Dawson, M. J. Godfrey, E. J. Thrush and J. T. Mullins

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565219

    44. X-ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN (pages 1733–1738)

      D. Lübbert, Petr Mikulík, Petra Pernot, Lukas Helfen, Michael D. Craven, Stacia Keller, Steven DenBaars and Tilo Baumbach

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565251

    45. Investigation of buffer structures for the growth of a high quality AlGaN/GaN hetero-structure with a high power operation FET on Si substrate using MOCVD (pages 1739–1743)

      Seikoh Yoshida, Sadahiro Katoh, Hironari Takehara, Yoshihiro Satoh, Jiang Li, Nariaki Ikeda, Kohji Hataya and Hitoshi Sasaki

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565236

    46. Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy (pages 1744–1748)

      M. Azize, M. Leroux, M. Laugt, P. Gibart and Z. Bougrioua

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565341

    47. Optical properties

      Crack free monolithic nitride vertical-cavity surface-emitting laser structures and pillar microcavities (pages 1749–1753)

      Henning Lohmeyer, Kathrin Sebald, Carsten Kruse, Roland Kröger, Jürgen Gutowski, Detlef Hommel, Jan Wiersig and Frank Jahnke

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565426

    48. Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths (pages 1754–1758)

      F. Guillot, M. Tchernycheva, L. Nevou, L. Doyennette, E. Monroy, F. H. Julien, Le Si Dang, T. Remmele, M. Albrecht, T. Shibata and M. Tanaka

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565129

    49. Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE (pages 1759–1763)

      E. V. Lutsenko, V. N. Pavlovskii, A. V. Danilchyk, K. A. Osipov, N. V. Rzheutskii, V. Z. Zubialevich, A. L. Gurskii, G. P. Yablonskii, T. Malinauskas, K. Jarašiūnas, K. Kazlauskas, S. Juršėnas, S. Miasojedovas, A. Žukauskas, Y. Dikme, H. Kalisch, R. H. Jansen, B. Schineller and M. Heuken

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565117

    50. Photonic devices

    51. Novel devices based on the combination of nitride and II–VI materials (pages 1771–1777)

      A. Murai, C. Kruse, L. McCarthy, U. K. Mishra, S. P. DenBaars and D. Hommel

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565429

    52. Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals (pages 1778–1782)

      L. Marona, T. Riemann, J. Christen, T. Świetlik, G. Franssen, P. Wiśniewski, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, R. Czernecki and P. Perlin

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565316

    53. Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm (pages 1783–1786)

      P. Morgan Pattison, Rajat Sharma, Aurelian David, Ichitaro Waki, Claude Weisbuch and Shuji Nakamura

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565408

    54. Waveguide mode dynamics of blue laser diodes (pages 1787–1791)

      Markus Pindl and Ulrich T. Schwarz

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565248

    55. Development of AlInGaN based blue–violet lasers on GaN and SiC substrates (pages 1792–1796)

      C. Rumbolz, G. Brüderl, A. Leber, C. Eichler, M. Furitsch, A. Avramescu, A. Miler, A. Lell, U. Strauß and V. Härle

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565320

    56. Comparison of degradation mechanisms of blue-violet laser diodes grown on SiC and GaN substrates (pages 1797–1801)

      M. Furitsch, A. Avramescu, C. Eichler, K. Engl, A. Leber, A. Miler, C. Rumbolz, G. Brüderl, U. Strauß, A. Lell and V. Härle

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565310

    57. Mg doping profile in III–N light emitting diodes in close proximity to the active region (pages 1802–1805)

      K. Köhler, A. Perona, M. Maier, J. Wiegert, M. Kunzer and J. Wagner

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565125

    58. Time resolved charge profiling of polarization dipoles in high power 525 nm green GaInN/GaN light emitting structures (pages 1806–1810)

      Y. Xia, Y. Li, Y. Ou, W. Zhao, M. Zhu, I. Yilmaz, T. Detchprohm, E. F. Schubert and C. Wetzel

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565284

    59. Profiling of light emission of GaN-based laser diodes with cathodoluminescence (pages 1811–1814)

      M. Godlewski, M. R. Phillips, K. Kazlauskas, R. Czernecki, G. Targowski, P. Perlin, M. Leszczyński, S. Figge and D. Hommel

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565134

    60. Deep ultraviolet light-emitting diodes (pages 1815–1818)

      X. Hu, J. Deng, J. P. Zhang, A. Lunev, Y. Bilenko, T. Katona, M. S. Shur, R. Gaska, M. Shatalov and A. Khan

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565266

    61. A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers (pages 1819–1823)

      D. Zhu, M. J. Kappers, P. M. F. J. Costa, C. McAleese, F. D. G. Rayment, G. R. Chabrol, D. M. Graham, P. Dawson, E. J. Thrush, J. T. Mullins and C. J. Humphreys

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565250

    62. Over 1000 mW single mode operation of planar inner stripe blue-violet laser diodes (pages 1824–1828)

      C. Sasaoka, K. Fukuda, M. Ohya, K. Shiba, M. Sumino, S. Kohmoto, K. Naniwae, M. Matsudate, E. Mizuki, I. Masumoto, R. Kobayashi, K. Kudo, T. Sasaki and K. Nishi

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565237

    63. Electronic devices

      Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications (pages 1829–1833)

      Ch. Förster, V. Cimalla, V. Lebedev, J. Pezoldt, K. Brueckner, R. Stephan, M. Hein, E. Aperathitis and O. Ambacher

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565232

    64. Deep-UV LED controlled AlGaN-based SAW oscillator (pages 1834–1838)

      D. Ciplys, M. S. Shur, A. Sereika, R. Rimeika, R. Gaska, Q. Fareed, J. Zhang, X. Hu, A. Lunev and Yu. Bilenko

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565218

    65. Nanocrystalline AlN:Si field emission arrays for vacuum electronics (pages 1839–1844)

      V. Lebedev, F. M. Morales, M. Fischer, M. Himmerlich, S. Krischok, J. A. Schäfer and O. Ambacher

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565238

    1. You have free access to this content
      Optimization of AlGaN/GaN HEMTs for high frequency operation (pages 1845–1850)

      T. Palacios, Y. Dora, A. Chakraborty, C. Sanabria, S. Keller, S. P. DenBaars and U. K. Mishra

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565384

  2. Original Papers

    1. Top of page
    2. Original Papers
    3. Original Papers
    1. Electronic devices

    2. Optical study of the AlGaN/GaN high electron mobility transistor structures (pages 1856–1860)

      D. Y. Lin, W. C. Lin and J. J. Shiu

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565323

    3. RF and DC characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure (pages 1861–1865)

      Narihiko Maeda, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi and Takatomo Enoki

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565165

    4. Large signal analysis of AlGaN/GaN-HEMT amplifier by coupled physical device-circuit simulation (pages 1866–1871)

      H. I. Fujishiro, S. Narita and Y. Tomita

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565142

    5. Selective-area growth and fabrication of recessed-gate GaN MESFET using plasma-assisted molecular beam epitaxy (pages 1872–1875)

      Seung Jae Hong, Patrick Chapman, Philip T. Krein and Kyekyoon (Kevin) Kim

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565362

    6. Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs (pages 1876–1881)

      G. Heidelberger, J. Bernát, A. Fox, M. Marso, H. Lüth, D. Gregušová and P. Kordoš

      Article first published online: 18 MAY 2006 | DOI: 10.1002/pssa.200565249

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