physica status solidi (a)

Cover image for Vol. 205 Issue 1

January 2008

Volume 205, Issue 1

Pages 1–205

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Cover Picture: phys. stat. sol. (a) 205/1

      Version of Record online: 29 JAN 2008 | DOI: 10.1002/pssa.200890000

  2. Editorial

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
      Editorial: phys. stat. sol. (a) 205/1 (pages 1–2)

      Editor-in-Chief Martin Stutzmann

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200821600

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
  4. NEW IN pss

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
  5. Preface

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Preface: phys. stat. sol. (a) 205/1 (pages 9–10)

      Workshop Chair Organizer Tadamasa Kimura

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200821603

  6. Original Paper

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Impurity based electroluminescent devices and materials

      Research on inorganic electroluminescence – present status (pages 11–14)

      H. Kobayashi, K. Ohmi, K. Ichino and T. Kunimoto

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776701

  7. Original Papers

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Impurity based electroluminescent devices and materials

      Visible and infrared electroluminescence from an Er-doped n-ZnO/p-Si light emitting diode (pages 19–22)

      S. Harako, S. Yokoyama, K. Ide, X. Zhao and S. Komoro

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776709

    2. Site-specific excitation of Eu ions in GaN (pages 30–33)

      S. Tafon Penn, Z. Fleischman and V. Dierolf

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776710

    3. Rare earth doping of III-nitride alloys by ion implantation (pages 34–37)

      K. Lorenz, E. Alves, I. S. Roqan, R. W. Martin, C. Trager-Cowan, K. P. O'Donnell and I. M. Watson

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776714

    4. Site-selective spectroscopy of erbium in wide band gap semiconductors (pages 38–42)

      A. Kozanecki, V. Glukhanyuk and H. Przybylińska

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776718

    5. Energy transfer from Si nanocrystals to Er ions near a metal layer (pages 47–51)

      M. Fujii, T. Nakamura, S. Miura, M. Inui and S. Hayashi

      Version of Record online: 14 NOV 2007 | DOI: 10.1002/pssa.200776717

    6. Impurity based electroluminescent devices and materials

    7. Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurement (pages 56–59)

      A. Wakahara, K. Takemoto, F. Oikawa, H. Okada, T. Ohshima and H. Itoh

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776703

    8. Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 μm light-emitting devices with extremely stable wavelength (pages 64–67)

      Yasufumi Fujiwara, Shouichi Takemoto, Takehiro Tokuno, Keiji Hidaka, Hideki Ichida, Masato Suzuki, Yoshikazu Terai, Yasuo Kanematsu and Masayoshi Tonouchi

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776702

    9. A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation (pages 68–70)

      Florence Gloux, Pierre Ruterana, K. Lorenz and E. Alves

      Version of Record online: 14 NOV 2007 | DOI: 10.1002/pssa.200776708

    10. Impurity based electroluminescent devices and materials

      Photoluminescence spectra of Eu-doped GaN (pages 71–74)

      J. Sawahata, J. W. Seo, S. Chen and K. Akimoto

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776706

  8. Feature Article

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Novel gain materials and devices based on III–N–V compounds

      GaInNAs(Sb) surface normal devices (pages 85–92)

      S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown and W. Sibbett

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200777460

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Novel gain materials and devices based on III–N–V compounds

      Temperature dependent site change of In in AlN and GaN (pages 93–95)

      J. Schmitz, J. Penner, K. Lorenz and R. Vianden

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200777453

    2. Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN (pages 107–113)

      A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli and S. Rubini

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200777462

    3. Annealing experiments of the GaP based dilute nitride Ga(NAsP) (pages 114–119)

      B. Kunert, D. Trusheim, V. Voßebürger, K. Volz and W. Stolz

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200777476

  10. Feature Article

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Novel gain materials and devices based on III–N–V compounds

      The development of room temperature LEDs and lasers for the mid-infrared spectral range (pages 129–143)

      A. Krier, M. Yin, V. Smirnov, P. Batty, P. J. Carrington, V. Solovev and V. Sherstnev

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776833

  11. Original Papers

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Novel gain materials and devices based on III–N–V compounds

      Investigation of ZnO as a perspective material for photonics (pages 144–149)

      V. Khranovskyy, G. R. Yazdi, G. Lashkarev, A. Ulyashin and R. Yakimova

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776838

    2. Towards p-type ZnO using post-growth annealing (pages 155–158)

      J. K. Dangbegnon, K. T. Roro and J. R. Botha

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776828

    3. Electrical characterization of defects introduced in Ge during electron beam deposition of different metals (pages 159–161)

      F. D. Auret, S. M. M. Coelho, M. Hayes, W. E. Meyer and J. M. Nel

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776814

    4. Defects in organic electronic devices (pages 162–166)

      T. P. Nguyen

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776805

    5. Cu2Zn1–xCdx Sn(Se1–ySy)4 solid solutions as absorber materials for solar cells (pages 167–170)

      M. Altosaar, J. Raudoja, K. Timmo, M. Danilson, M. Grossberg, J. Krustok and E. Mellikov

      Version of Record online: 30 JAN 2008 | DOI: 10.1002/pssa.200776839

    6. Materials preparation, manipulation, and structure

      Positron annihilation study of PbWO4 crystal doped with Y2O3 at different concentration (pages 173–176)

      Jianjun Xie, Zhengsong Geng, Hui Yuan, Wei Xiong, Liang Chen, Chongzhi Ye, Guoqing Xu, Xiaopeng Hao, Zhiming Zhang, Hongliang Ma, Mu Gu, Xiqi Feng and Jingying Liao

      Version of Record online: 24 OCT 2007 | DOI: 10.1002/pssa.200723189

    7. Charge transport phenomena; superconductivity

    8. Optical properties

      Long-lasting phosphorescence properties of Mn2+-doped Cd2Ge7O16 orange light-emitting phosphor (pages 194–198)

      Guangbo Che, Xiuying Li, Chunbo Liu, Hang Wang, Yang Liu and Zhanlin Xu

      Version of Record online: 24 OCT 2007 | DOI: 10.1002/pssa.200723050

    9. Device-related phenomena

  12. Information for authors

    1. Top of page
    2. Cover Picture
    3. Editorial
    4. Contents
    5. NEW IN pss
    6. Preface
    7. Original Paper
    8. Original Papers
    9. Feature Article
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors

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