physica status solidi (a)

Cover image for Vol. 205 Issue 3

Special Issue: Structural and Electronic Properties of OFETs

March 2008

Volume 205, Issue 3

Pages 401–665

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
    1. Cover Picture: phys. stat. sol. (a) 205/3

      Version of Record online: 7 MAR 2008 | DOI: 10.1002/pssa.200890002

  2. Contents

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
  3. NEW IN pss

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
  4. Preface

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
    1. Preface: phys. stat. sol. (a) 205/3 (pages 407–408)

      Guest Editor Christof Wöll

      Version of Record online: 7 MAR 2008 | DOI: 10.1002/pssa.200821609

  5. Feature Articles

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
    1. Molecular compounds

      Fluorinated phthalocyanines as molecular semiconductor thin films (pages 409–420)

      H. Brinkmann, C. Kelting, S. Makarov, O. Tsaryova, G. Schnurpfeil, D. Wöhrle and D. Schlettwein

      Version of Record online: 21 FEB 2008 | DOI: 10.1002/pssa.200723391

    2. Novel organic semiconductors and processing techniques for organic field-effect transistors (pages 421–429)

      H. N. Tsao, H. J. Räder, W. Pisula, A. Rouhanipour and K. Müllen

      Version of Record online: 21 FEB 2008 | DOI: 10.1002/pssa.200723401

  6. Original Paper

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
    1. Molecular compounds

      Assembly, structure, and performance of an ultra-thin film organic field-effect transistor (OFET) based on substituted oligothiophenes (pages 430–439)

      K. Haubner, E. Jaehne, H.-J. P. Adler, D. Koehler, C. Loppacher, L. M. Eng, J. Grenzer, A. Herasimovich and S. Scheinert

      Version of Record online: 22 FEB 2008 | DOI: 10.1002/pssa.200723407

  7. Feature Articles

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
    1. Molecular compounds

      Organic transistors utilising highly soluble swivel-cruciform oligothiophenes (pages 440–448)

      Achmad Zen, Patrick Pingel, Dieter Neher and Ullrich Scherf

      Version of Record online: 22 FEB 2008 | DOI: 10.1002/pssa.200723504

    2. Structural and morphological aspects

    3. In-situ X-ray scattering studies of OFET interfaces (pages 461–474)

      Alexander Gerlach, Stefan Sellner, Stefan Kowarik and Frank Schreiber

      Version of Record online: 21 FEB 2008 | DOI: 10.1002/pssa.200723411

    4. Electronic states at the dielectric/semiconductor interface in organic field effect transistors (pages 475–487)

      Niels Benson, Christian Melzer, Roland Schmechel and Heinz von Seggern

      Version of Record online: 22 FEB 2008 | DOI: 10.1002/pssa.200723421

    5. Device performance and characterization

      Pentacene devices: Molecular structure, charge transport and photo response (pages 526–533)

      Bert Nickel, Matthias Fiebig, Stefan Schiefer, Martin Göllner, Martin Huth, Christoph Erlen and Paolo Lugli

      Version of Record online: 21 FEB 2008 | DOI: 10.1002/pssa.200723372

    6. Characteristics and mechanisms of hysteresis in polymer field-effect transistors (pages 534–548)

      G. Paasch, S. Scheinert, A. Herasimovich, I. Hörselmann and Th. Lindner

      Version of Record online: 21 FEB 2008 | DOI: 10.1002/pssa.200723400

    7. Microscopic and spectroscopic characterization of interfaces and dielectric layers for OFET devices (pages 600–611)

      K. Müller, Y. Burkov, D. Mandal, K. Henkel, I. Paloumpa, A. Goryachko and D. Schmeißer

      Version of Record online: 22 FEB 2008 | DOI: 10.1002/pssa.200723424

    8. Scaling limits and MHz operation in thiophene-based field-effect transistors (pages 612–625)

      A. Hoppe, T. Balster, T. Muck and V. Wagner

      Version of Record online: 22 FEB 2008 | DOI: 10.1002/pssa.200723442

  8. Original Paper

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
    1. Device performance and characterization

      Aluminum oxide film as gate dielectric for organic FETs: Anodization and characterization (pages 626–632)

      X.-D. Dang, W. Plieth, S. Richter, M. Plötner and W.-J. Fischer

      Version of Record online: 22 FEB 2008 | DOI: 10.1002/pssa.200723453

  9. Feature Articles

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
    1. Novel devices

      Carbon nanotube transistors – chemical functionalization and device characterization (pages 633–646)

      Kannan Balasubramanian, Eduardo J. H. Lee, Ralf Thomas Weitz, Marko Burghard and Klaus Kern

      Version of Record online: 21 FEB 2008 | DOI: 10.1002/pssa.200723410

    2. Contact effects in Cu(TCNQ) memory devices (pages 647–655)

      Artur Hefczyc, Lars Beckmann, Eike Becker, Hans-Hermann Johannes and Wolfgang Kowalsky

      Version of Record online: 14 JAN 2008 | DOI: 10.1002/pssa.200723418

    3. Organic field-effect transistors for spin-polarized transport (pages 656–663)

      M. Michelfeit, G. Schmidt, J. Geurts and L. W. Molenkamp

      Version of Record online: 22 FEB 2008 | DOI: 10.1002/pssa.200723436

  10. Information for authors

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
  11. Erratum

    1. Top of page
    2. Cover Picture
    3. Contents
    4. NEW IN pss
    5. Preface
    6. Feature Articles
    7. Original Paper
    8. Feature Articles
    9. Original Paper
    10. Feature Articles
    11. Information for authors
    12. Erratum
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