physica status solidi (a)

Cover image for Vol. 206 Issue 11

November 2009

Volume 206, Issue 11

Pages 2489–2671

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Paper
    8. Feature Article
    9. Original Papers
    10. Information for authors
    1. Front Cover (Phys. Status Solidi A 11/2009)

      Yury P. Rakovich, John F. Donegan, Mikhail I. Vasilevskiy and Andrey L. Rogach

      Article first published online: 6 NOV 2009 | DOI: 10.1002/pssa.200990015

      Thumbnail image of graphical abstract

      Is laser cooling of semiconductor quantum dots by phononassisted anti-Stokes photoluminescence possible? The Feature Article by Rakovich and coworkers (p. 2497), featured on the front cover, attempts to answer this question by describing the basic principles of this phenomenon and discussing the progress and future challenges of the field. Recent experimental advancements made it possible that all the requirements for optical cooling using semiconductor nanocrystals are finally met. The appropriate electronic structure, strong electron-phonon interaction, high quantum efficiency of photoluminescence and the efficient thermally-stimulated anti-Stokes photoluminescence in quantum dots are all very favorable conditions for the first observation of optical cooling. The question about the feasibility of anti-Stokes cooling with quantum dots is about “when” rather than “if”.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Paper
    8. Feature Article
    9. Original Papers
    10. Information for authors
    1. Back Cover (Phys. Status Solidi A 11/2009)

      Karl W. Böer

      Article first published online: 6 NOV 2009 | DOI: 10.1002/pssa.200990016

      Thumbnail image of graphical abstract

      CdS/CdTe solar cells have been known to be excellent photovoltaic converters for more than three decades. The fact that the presence of a very thin cover layer of n-type CdS improves the performance of the solar cells is long known but still little is known about the mechanism that permits such dramatic improvement, not only in CdTe but in many other CIS-type cells. The article by Karl W. Böer (p. 2665) discusses the most important reasons for such a behavior. The most important effect is that CdS limits the field in a junction by field quenching of its photoconductivity due to Frenkel—Poole excitation of holes that were trapped in Coulomb-attractive slow recombination centers. This field quenching can also electronically invert the CdS layer close to a junction to a p-type semiconductor. Field quenching forces the Fermi level to shift below the middle of the band gap, causing the conduction bands to disconnect, with the CdS band shifting up and reducing substantially electron leakage through the junction. The inside back cover picture shows the suggested band model for the junction part of the CdS/CdTe solar cell for three different bias conditions: red — reverse, black — open circuit, and green — forward bias.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Paper
    8. Feature Article
    9. Original Papers
    10. Information for authors
    1. Back Cover (Phys. Status Solidi A 11/2009)

      Anas F. Jarjour, Rachel A. Oliver and Robert A. Taylor

      Article first published online: 6 NOV 2009 | DOI: 10.1002/pssa.200990017

      Thumbnail image of graphical abstract

      The Feature Article by Jarjour et al. (p. 2510) reviews the progress made so far towards the development of optically excited and electrically driven single photon sources based on nitride-based single quantum dots. The back cover picture illustrates the emission of single photons in the blue region of the spectrum from an InGaN/GaN quantum dot under nonlinear optical excitation in the near infrared. The atomistic structure of an InGaN quantum dot embedded in a GaN barrier was used in the atomistic simulation of the electronic structure of these quantum dots. The correlation measurements shown in the graph demonstrate the single-photon nature of the emission.

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Paper
    8. Feature Article
    9. Original Papers
    10. Information for authors
    1. Contents: (Phys. Status Solidi A 11/2009) (pages 2489–2493)

      Article first published online: 6 NOV 2009 | DOI: 10.1002/pssa.200921677

  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Paper
    8. Feature Article
    9. Original Papers
    10. Information for authors
    1. Recent and forthcoming publications in pss (pages 2494–2495)

      Article first published online: 6 NOV 2009 | DOI: 10.1002/pssa.200921678

  6. Original Paper

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Paper
    8. Feature Article
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Anti-Stokes cooling in semiconductor nanocrystal quantum dots: A feasibility study (pages 2497–2509)

      Yury P. Rakovich, John F. Donegan, Mikhail I. Vasilevskiy and Andrey L. Rogach

      Article first published online: 24 JUL 2009 | DOI: 10.1002/pssa.200925052

  7. Feature Article

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Paper
    8. Feature Article
    9. Original Papers
    10. Information for authors
    1. Nitride-based quantum dots for single photon source applications (pages 2510–2523)

      Anas F. Jarjour, Rachel A. Oliver and Robert A. Taylor

      Article first published online: 31 AUG 2009 | DOI: 10.1002/pssa.200824455

  8. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Paper
    8. Feature Article
    9. Original Papers
    10. Information for authors
    1. Materials preparation, manipulation, and structure

      Initial molecular orientation of phthalocyanines on oxide substrates (pages 2524–2528)

      Indro Biswas, Heiko Peisert, Maria Benedetta Casu, Britt-Elfriede Schuster, Peter Nagel, Michael Merz, Stefan Schuppler and Thomas Chassé

      Article first published online: 24 JUL 2009 | DOI: 10.1002/pssa.200925111

    2. Nanostructures, thin films, surfaces and interfaces

    3. Unique structure of ZnO films deposited by chemical bath deposition (pages 2551–2554)

      Dewei Chu, Yoshitake Masuda, Kazumi Kato and Takahiro Hamada

      Article first published online: 29 JUN 2009 | DOI: 10.1002/pssa.200925197

    4. Charge transport phenomena; superconductivity

    5. Phase transitions and electrical conductivity of Bi-doped La2Mo2O9 oxide ion conductors (pages 2564–2568)

      Valentina Voronkova, Elena Kharitonova and Alexandra Krasilnikova

      Article first published online: 22 JUN 2009 | DOI: 10.1002/pssa.200925184

    6. Optical properties

    7. Thermoluminescence and absorption spectra of MgO crystals irradiated by fast neutron fluxes of low intensity (pages 2581–2585)

      V. Kvatchadze, G. Dekanozishvili, M. Abramishvili, Z. Akhvlediani, M. Galustashvili and T. Kalabegishvili

      Article first published online: 24 JUL 2009 | DOI: 10.1002/pssa.200925016

    8. The luminescent and scintillation properties of YAlO3 and YAlO3:Ce single crystalline films grown by liquid phase epitaxy from BaO-based flux (pages 2586–2592)

      Y. Zorenko, M. Nikl, J. A. Mares, V. Gorbenko, V. Savchyn, T. Voznyak, M. Kucera, A. Beitlerova, R. Kucerkova and A. Fedorov

      Article first published online: 24 JUL 2009 | DOI: 10.1002/pssa.200925032

    9. Optically stimulated luminescence at room temperature of hydrothermal K2YF5:Pr3+ crystals (pages 2593–2598)

      J. Marcazzó, N. M. Khaidukov, E. Caselli, C. Dangelo and M. Santiago

      Article first published online: 29 JUN 2009 | DOI: 10.1002/pssa.200925066

    10. Comparative studies of Lu3Al5O12:Ce and Y3Al5O12:Ce scintillators for gamma-ray detection (pages 2599–2605)

      W. Chewpraditkul, L. Swiderski, M. Moszynski, T. Szczesniak, A. Syntfeld-Kazuch, C. Wanarak and P. Limsuwan

      Article first published online: 22 JUN 2009 | DOI: 10.1002/pssa.200925161

    11. Theoretical analysis of optical gain in PbSe/Pb1–xSrxSe quantum well lasers (pages 2606–2612)

      Y. H. Sun, L. J. Xu, B. Zhang, Q. F. Xu, R. Wang, N. Dai and H. Z. Wu

      Article first published online: 22 JUN 2009 | DOI: 10.1002/pssa.200925129

    12. Green photoluminescence of SrGa2S4:Sn phosphors (pages 2613–2616)

      Mutsumi Nagata, Shinji Okamoto, Katsu Tanaka, Toshikatsu Sakai and Akira Tamaki

      Article first published online: 22 JUN 2009 | DOI: 10.1002/pssa.200925225

    13. Magnetic properties; magnetic resonances

      Electron paramagnetic resonance of Gd3+ ion in monocrystal YAl3(BO3)4 (pages 2617–2621)

      A. D. Prokhorov, I. N. Krygin, A. A. Prokhorov, L. F. Chernush, P. Aleshkevich, V. Dyakonov and H. Szymczak

      Article first published online: 24 JUL 2009 | DOI: 10.1002/pssa.200925027

    14. Dielectric and ferroelectric properties

      Phase transitions and electrical properties of (1−x)(K0.5Na0.5)NbO3xBiScO3 lead-free piezoelectric ceramics with a CuO sintering aid (pages 2622–2626)

      Xuhai Li, Meng Jiang, Jing Liu, Jiliang Zhu, Xiaohong Zhu, Lihua Li, Yu Zhou, Jianguo Zhu and Dingquan Xiao

      Article first published online: 29 JUN 2009 | DOI: 10.1002/pssa.200925036

    15. Dieletric and magnetic properties of Zn[BOND]Ti substituted M-type barium hexaferrite (pages 2627–2631)

      Charu Lata Dube, Subhash C. Kashyap, D. K. Pandya and D. C. Dube

      Article first published online: 24 JUL 2009 | DOI: 10.1002/pssa.200925104

    16. Device-related phenomena

    17. Growth and electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content (pages 2652–2657)

      K. Köhler, S. Müller, P. Waltereit, L. Kirste, H. P. Menner, W. Bronner and R. Quay

      Article first published online: 22 JUN 2009 | DOI: 10.1002/pssa.200925168

    18. Effect of rapid thermal annealing on the electrical and structural properties of Ru/n-InP (100) Schottky rectifiers (pages 2658–2664)

      V. Janardhanam, A. Ashok Kumar, M. Bhaskar Reddy, V. Rajagopal Reddy, P. Narasimha Reddy, A. K. Balamurugan and A. K. Tyagi

      Article first published online: 22 JUN 2009 | DOI: 10.1002/pssa.200925173

  9. Information for authors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Paper
    8. Feature Article
    9. Original Papers
    10. Information for authors
    1. Information for authors (pages 2670–2671)

      Article first published online: 6 NOV 2009 | DOI: 10.1002/pssa.200921679

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