physica status solidi (a)

Cover image for Vol. 206 Issue 6

June 2009

Volume 206, Issue 6

Pages 1101–1376

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. NEW IN pss
    6. Feature Article
    7. Editor's Choice
    8. Original Papers
    1. Cover Picture: Phys. Status Solidi A 206/6

      Version of Record online: 3 JUN 2009 | DOI: 10.1002/pssa.200990007

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. NEW IN pss
    6. Feature Article
    7. Editor's Choice
    8. Original Papers
    1. Back Cover: Phys. Status Solidi A 206/6

      Version of Record online: 3 JUN 2009 | DOI: 10.1002/pssa.200990008

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. NEW IN pss
    6. Feature Article
    7. Editor's Choice
    8. Original Papers
  4. NEW IN pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. NEW IN pss
    6. Feature Article
    7. Editor's Choice
    8. Original Papers
  5. Feature Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. NEW IN pss
    6. Feature Article
    7. Editor's Choice
    8. Original Papers
    1. Giant enhancement of material damage associated to electronic excitation during ion irradiation: The case of LiNbO3 (pages 1109–1116)

      A. Rivera, J. Olivares, G. García, J. M. Cabrera, F. Agulló-Rueda and F. Agulló-López

      Version of Record online: 30 MAR 2009 | DOI: 10.1002/pssa.200824409

  6. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. NEW IN pss
    6. Feature Article
    7. Editor's Choice
    8. Original Papers
    1. You have free access to this content
  7. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. NEW IN pss
    6. Feature Article
    7. Editor's Choice
    8. Original Papers
    1. Nitride Semiconductors (IWN 2008)

      New developments in green LEDs (pages 1125–1129)

      Matthias Peter, Ansgar Laubsch, Werner Bergbauer, Tobias Meyer, Matthias Sabathil, Johannes Baur and Berthold Hahn

      Version of Record online: 30 MAR 2009 | DOI: 10.1002/pssa.200880926

    2. Nitride-based quantum structures and devices on modified GaN substrates (pages 1130–1134)

      Piotr Perlin, Gijs Franssen, Justyna Szeszko, R. Czernecki, Grzegorz Targowski, Marcin Kryśko, Szymon Grzanka, Grzegorz Nowak, Elżbieta Litwin-Staszewska, Ryszard Piotrzkowski, Mike Leszczyński, Bolek Łucznik, Izabella Grzegory, Rafał Jakieła, Martin Albrecht and Tadek Suski

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200880911

    3. High performance and high reliability AlGaN/GaN HEMTs (pages 1135–1144)

      Toshihide Kikkawa, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kenji Imanishi, Naoki Hara and Kazukiyo Joshin

      Version of Record online: 21 APR 2009 | DOI: 10.1002/pssa.200880983

    4. 8 W single-emitter InGaN laser in pulsed operation (pages 1149–1152)

      Stefanie Brüninghoff, Christoph Eichler, Sönke Tautz, Alfred Lell, Matthias Sabathil, Stephan Lutgen and Uwe Strauß

      Version of Record online: 2 FEB 2009 | DOI: 10.1002/pssa.200880859

    5. The progress of AlN bulk growth and epitaxy for electronic applications (pages 1153–1159)

      Stephan G. Mueller, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Sandra B. Schujman, James Grandusky, Joseph A. Smart and Leo J. Schowalter

      Version of Record online: 29 JAN 2009 | DOI: 10.1002/pssa.200880758

    6. Effect of aluminum carbide buffer layer on growth and self-separation of m -plane GaN by hydride vapor phase epitaxy (pages 1160–1163)

      Hitoshi Sasaki, Haruo Sunakawa, Norihiko Sumi, Kazutomi Yamamoto and Akira Usui

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200880834

    7. Growth of m -GaN layers by epitaxial lateral overgrowth from sapphire sidewalls (pages 1164–1167)

      Narihito Okada, Yuji Kawashima and Kazuyuki Tadatomo

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200880930

    8. 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire (pages 1176–1182)

      Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi, Jun Norimatsu, Takayoshi Takano, Kenji Tsubaki and Norihiko Kamata

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200880961

    9. Strain effects and phonon–plasmon coupled modes in Si-doped AlN (pages 1183–1186)

      M. Gómez-Gómez, A. Cros, M. Hermann, M. Stutzmann and M. Eickhoff

      Version of Record online: 21 APR 2009 | DOI: 10.1002/pssa.200880852

    10. Defect reduction in non-polar (11equation image0) GaN grown on (1equation image02) sapphire (pages 1190–1193)

      Carol F. Johnston, Menno J. Kappers, Michelle A. Moram, Jonathan L. Hollander and Colin J. Humphreys

      Version of Record online: 25 MAR 2009 | DOI: 10.1002/pssa.200880788

    11. Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs (pages 1194–1198)

      Sönke Fündling, Shunfeng Li, Ünsal Sökmen, Stephan Merzsch, Peter Hinze, Thomas Weimann, Uwe Jahn, Achim Trampert, Henning Riechert, Erwin Peiner, Hergo-Heinrich Wehmann and Andreas Waag

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200880841

    12. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer (pages 1199–1204)

      Hirotoshi Tsuzuki, Fumiaki Mori, Kenichiro Takeda, Tomoki Ichikawa, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita and Hirofumi Kan

      Version of Record online: 25 MAR 2009 | DOI: 10.1002/pssa.200880784

    13. Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy (pages 1205–1210)

      W. S. Tan, M. Kauer, S. E. Hooper, T. M. Smeeton, V. Bousquet, M. Rossetti, J. Heffernan, H. Xiu and C. J. Humphreys

      Version of Record online: 29 JAN 2009 | DOI: 10.1002/pssa.200880842

    14. High power broad ridge (Al,In)GaN laser diodes: Spatial and spectral stability (pages 1211–1214)

      Harald Braun, Stephan Rogowsky, Bernd Schmidtke, Ulrich T. Schwarz, Stefanie Brüninghoff, Alfred Lell and Uwe Strauß

      Version of Record online: 29 JAN 2009 | DOI: 10.1002/pssa.200880861

    15. GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability (pages 1215–1220)

      P. Waltereit, W. Bronner, R. Quay, M. Dammann, R. Kiefer, S. Müller, M. Musser, J. Kühn, F. van Raay, M. Seelmann, M. Mikulla, O. Ambacher, F. van Rijs, T. Rödle and K. Riepe

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200880774

    16. Recent advances in GaN transistors for future emerging applications (pages 1221–1227)

      Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka and Daisuke Ueda

      Version of Record online: 29 JAN 2009 | DOI: 10.1002/pssa.200880968

    17. Semiconductor anodization composite materials

      Stratified structure of anodically formed mesoporous silica (pages 1229–1234)

      Jean-Noël Chazalviel, Robert Cortès, Fouad Maroun and François Ozanam

      Version of Record online: 2 FEB 2009 | DOI: 10.1002/pssa.200881044

    18. Photo-electrochemical etching of macro-pores in silicon with grooves as etch seeds (pages 1235–1239)

      E. V. Astrova, A. A. Nechitailov, V. A. Tolmachev, V. A. Melnikov and T. S. Perova

      Version of Record online: 2 FEB 2009 | DOI: 10.1002/pssa.200881101

    19. Self-catalytic etching of silicon: from nanowires to regular mesopores (pages 1250–1254)

      L. Boarino, M. Destro, S. Borini, N. Pugno, A. Chiodoni, F. Bellotti and G. Amato

      Version of Record online: 12 MAR 2009 | DOI: 10.1002/pssa.200881068

    20. Straining of thin Si films by partially oxidized meso-porous Si substrates (pages 1255–1258)

      Vladimir Lysenko, Dmytro Ostapenko, Jean-Marie Bluet, Philippe Regregny, Michel Mermoux, Abderraouf Boucherif, Olivier Marty, Genevieve Grenet, Valery Skryshevsky and Gerard Guillot

      Version of Record online: 25 MAR 2009 | DOI: 10.1002/pssa.200881103

    21. Multistep filling of porous silicon with conductive polymer by electropolymerization (pages 1259–1263)

      Kazuhiro Fukami, Tetsuo Sakka, Yukio H. Ogata, Takeshi Yamauchi and Norio Tsubokawa

      Version of Record online: 9 FEB 2009 | DOI: 10.1002/pssa.200881039

    22. Porous silicon/metal nanocomposite with tailored magnetic properties (pages 1264–1267)

      Petra Granitzer, Klemens Rumpf, Peter Poelt and Heinz Krenn

      Version of Record online: 25 MAR 2009 | DOI: 10.1002/pssa.200881013

    23. Characterization

      Singlet oxygen inhibits nonradiative defects in porous silicon (pages 1268–1272)

      V. B. Pikulev, S. N. Kuznetsov, A. S. Kuznetsov, A. A. Saren and V. A. Gurtov

      Version of Record online: 12 MAR 2009 | DOI: 10.1002/pssa.200881055

    24. Terahertz transmission through p+ porous silicon membranes (pages 1273–1277)

      Shu-Zee A. Lo, Andrea M. Rossi and Thomas E. Murphy

      Version of Record online: 2 FEB 2009 | DOI: 10.1002/pssa.200881073

    25. A Young's modulus study of n- and p-type porous silicon (pages 1278–1281)

      Michael K. Oisten and Paul L. Bergstrom

      Version of Record online: 30 MAR 2009 | DOI: 10.1002/pssa.200881096

    26. Photonics and energy applications

      Macroporous silicon hydrogen diffusion layers for micro-fuel cells (pages 1282–1285)

      S. Desplobain, G. Gautier, L. Ventura and P. Bouillon

      Version of Record online: 12 MAR 2009 | DOI: 10.1002/pssa.200881081

    27. Applications in physical, chemical and biological sensors, bio-imaging, medical, terahertz transmission

      Photoexcited silicon nanocrystals: mediators for the excitation of organic molecules (pages 1295–1298)

      Bernhard Goller, Sergej Polisski and Dmitry Kovalev

      Version of Record online: 12 MAR 2009 | DOI: 10.1002/pssa.200881058

    28. Carbonization of porous silicon optical gas sensors for enhanced stability and sensitivity (pages 1306–1308)

      V. Torres-Costa, J. Salonen, T. M. Jalkanen, V.-P. Lehto, R. J. Martín-Palma and J. M. Martínez-Duart

      Version of Record online: 2 FEB 2009 | DOI: 10.1002/pssa.200881052

    29. Controlled enlargement of pores by annealing of porous silicon (pages 1313–1317)

      J. Salonen, E. Mäkilä, J. Riikonen, T. Heikkilä and V.-P. Lehto

      Version of Record online: 12 MAR 2009 | DOI: 10.1002/pssa.200881023

    30. Small molecule detection by reflective interferometric Fourier transform spectroscopy (RIFTS) (pages 1318–1321)

      Claudia Pacholski, Loren A. Perelman, Michael S. VanNieuwenhze and Michael J. Sailor

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200881072

    31. New approach for the selective chemical functionalization of porous silicon films with organic monolayers (pages 1326–1329)

      Stéphanie Pace, Laetitia Gazagnes, Philippe Gonzalez, Claude Guimon, Michel Granier, Didier Cot, Jean-Marie Devoisselle and Frédérique Cunin

      Version of Record online: 30 MAR 2009 | DOI: 10.1002/pssa.200881080

    32. IR and EPR study of ammonia adsorption effect on silicon nanocrystals (pages 1330–1332)

      Elizaveta Konstantinova, Alexander Pavlikov, Alexander Vorontsov, Alexandra Efimova, Victor Timoshenko and Pavel Kashkarov

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200881091

    33. Electrochemically induced bioactivity of porous silicon functionalized by acetylene (pages 1333–1338)

      Ester Pastor, Jarno Salonen, Vesa-Pekka Lehto and Eugenia Matveeva

      Version of Record online: 25 MAR 2009 | DOI: 10.1002/pssa.200881061

    34. Synthesis of DNA oligonucleotides in mesoporous silicon (pages 1339–1342)

      Jenifer L. Lawrie, Zhou Xu, Guoguang Rong, Paul E. Laibinis and Sharon M. Weiss

      Version of Record online: 12 MAR 2009 | DOI: 10.1002/pssa.200881114

    35. Investigation of humidity adsorption in porous silicon layers (pages 1343–1347)

      Andras Kovacs, Dirk Meister and Ulrich Mescheder

      Version of Record online: 25 MAR 2009 | DOI: 10.1002/pssa.200881106

    36. The hydrophobic properties of femtosecond laser fabricated spike structures and their effects on cell proliferation (pages 1348–1351)

      Elena Fadeeva, Sabrina Schlie, Jürgen Koch, Anaclet Ngezahayo and Boris N. Chichkov

      Version of Record online: 12 MAR 2009 | DOI: 10.1002/pssa.200881063

    37. Porous silicon versus its composite with C60: testing in vitro (pages 1352–1355)

      S. N. Kuznetsov, T. O. Volkova, V. B. Pikulev, A. A. Saren, Yu. E. Gardin and V. A. Gurtov

      Version of Record online: 25 MAR 2009 | DOI: 10.1002/pssa.200881059

    38. Development of endothelial cells on pillar-covered silicon (pages 1356–1360)

      Jennifer D. Zawislak, Kurt W. Kolasinski and Brian P. Helmke

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200881037

    39. Biomolecule size-dependent sensitivity of porous silicon sensors (pages 1365–1368)

      Guoguang Rong and Sharon M. Weiss

      Version of Record online: 12 MAR 2009 | DOI: 10.1002/pssa.200881097

    40. Novel applications of silicon and porous silicon based EISCAP biosensors (pages 1369–1373)

      Arun Mathew, Ganesh Pandian, Enakshi Bhattacharya and Anju Chadha

      Version of Record online: 23 MAR 2009 | DOI: 10.1002/pssa.200881084

    41. Detection of protease activity by FRET using porous silicon as an energy acceptor (pages 1374–1376)

      Luo Gu, Manuel Orosco and Michael J. Sailor

      Version of Record online: 25 MAR 2009 | DOI: 10.1002/pssa.200881065

SEARCH

SEARCH BY CITATION