Front Cover (Phys. Status Solidi A 9/2009)
Pierre Muret, Amit Kumar, Pierre-Nicolas Volpe, Mamadou Wade, Julien Pernot, Laurence Magaud, Christine Mer and Philippe Bergonzo
Article first published online: 9 SEP 2009 | DOI: 10.1002/pssa.200990011
Homoepitaxial diamond films are more and more frequently proposed as the basic component of electronic devices, but like in other semiconductors, defects and unwanted impurities may hamper optimal operation. The article by Pierre Muret et al. (p. 2016) deals with these aspects in boron-doped homoepitaxial diamond films. A new understanding of the role and structure of impurities comes both from ab-initio calculations of the density of states and total energy of possible defect configurations, and from the electrical response of elementary devices, mainly Schottky diodes, whose transient regimes of current, charge or capacitance are influenced by local defects. The Fourier transforms of capacitance transients in a borondoped diamond Schottky diode, shown on the front cover, are representative of the experimental turning back to equilibrium of the hole trap population in the frequency domain at several temperatures. The small image displays the local structure of the most stable BH2 defect. The results obtained in this work demonstrate that defects incorporating hydrogen atoms are the most probable, but that their concentration profiles decrease rapidly inward the diamond film.