physica status solidi (a)

Cover image for Vol. 207 Issue 3

Special Issue: 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23)

March 2010

Volume 207, Issue 3

Pages 493–767

Issue edited by: Ruud E. I. Schropp, Miro Zeman, Jatindra K. Rath, Guy J. Adriaenssens

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Past & Present
    8. Original Papers
    9. Information for authors
    1. Front Cover (Phys. Status Solidi A 3/2010)

      K. Bittkau and T. Beckers

      Version of Record online: 11 MAR 2010 | DOI: 10.1002/pssa.201090004

      Thumbnail image of graphical abstract

      In thin-film solar cells based on a-Si:H and µc-Si:H, textured surfaces are used to increase the absorption of light, in particular for larger wavelengths where the intrinsic absorption is very low. In the article by Bittkau and Beckers on pp. 661–666, the light scattering at textured a-Si:H/µc-Si:H tandem solar cells is studied in the optical near-field both experimentally by means of near-field scanning optical microscopy (NSOM) and theoretically by rigorous solution of Maxwell's equations. It is shown that the improvement of light absorption due to the texture is borne by the scattering into evanescent light modes. The intensity of these light modes decreases exponentially with the distance from the surface, and they are therefore only accessible in the optical near-field. Methods are shown to extract the evanescent part of light from the spatial distribution of the total light intensity, both theoretically and experimentally. With this technique, maps of local light trapping efficiencies are generated. These maps show correlation to topographic information. The understanding of such correlations is essential for the further improvement of light trapping.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Past & Present
    8. Original Papers
    9. Information for authors
    1. Back Cover (Phys. Status Solidi A 3/2010)

      A. S. M. F. Chowdhury, D. Mari and R. Schaller

      Version of Record online: 11 MAR 2010 | DOI: 10.1002/pssa.201090005

      Thumbnail image of graphical abstract

      Thermal stress at the interface of a fiber reinforced magnesium matrix composite arises when temperature changes. Relaxation of these stresses mainly occurs by the motion of dislocations, which produces a transient increase of the damping. Mechanical spectroscopy gives access to the dynamic modulus and to damping capacity measured by the phase lag tan(θ) between the excitation and the response of the sample. An anomalous behavior of the dynamic modulus, which increases upon heating, is observed. The article by Chowdhury et al. (see pp. 713–717) explains this phenomenon by the competition between bonding and debonding of fibers to the matrix created by the motion of dislocations together with differential thermal expansion

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Past & Present
    8. Original Papers
    9. Information for authors
    1. Back Cover (Phys. Status Solidi A 3/2010)

      G. Amin, I. Hussain, S. Zaman, N. Bano, O. Nur and M. Willander

      Version of Record online: 11 MAR 2010 | DOI: 10.1002/pssa.201090006

      Thumbnail image of graphical abstract

      ZnO with many various deep level defects emitting in the whole visible region provides a potential for the development of white light emitting diodes. In their article on pp. 748–752, Amin et al. study the current transport and trap extraction of hydrothermally grown ZnO nanotubes using a gold Schottky diode. The scanning electron microscope image on the left of the back cover picture shows recently synthesized ZnO nanotubes. The image on the right represents the cathodoluminescence spectrum obtained from ZnO nanotube Schottky contacts emitting a wide broad band in the visible region.

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Past & Present
    8. Original Papers
    9. Information for authors
  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Past & Present
    8. Original Papers
    9. Information for authors
  6. Past & Present

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Past & Present
    8. Original Papers
    9. Information for authors
    1. The Mott lecture, plenary keynotes, and special commemorative session

  7. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Past & Present
    8. Original Papers
    9. Information for authors
    1. The Mott lecture, plenary keynotes, and special commemorative session

    2. Structure and properties of silver doped SnSe2 and Ge2Sb2Te5 thin films prepared by pulsed laser deposition (pages 516–520)

      M. Popescu, A. Velea, F. Sava, A. Lőrinczi, A. Tomescu, C. Simion, E. Matei, G. Socol, I. N. Mihailescu, A. Andonie and I. Stamatin

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982900

    3. Growth and preparation of silicon films and nanostructures

    4. High hydrogen dilution and low substrate temperature cause columnar growth of hydrogenated amorphous silicon (pages 525–529)

      Paula C. P. Bronsveld, Tomas Mates, Antonin Fejfar, Jan Kočka, Jatindra K. Rath and Ruud E. I. Schropp

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssa.200982847

    5. High deposition rate nanocrystalline silicon with enhanced homogeneity (pages 530–534)

      Arjan Verkerk, Jatindra K. Rath and Ruud Schropp

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssa.200982883

    6. Passivation study of the amorphous–crystalline silicon interface formed using DC saddle-field glow discharge (pages 539–543)

      Barzin Bahardoust, Alongkarn Chutinan, Keith Leong, Adel B. Gougam, Davit Yeghikyan, Tome Kosteski, Nazir P. Kherani and Stefan Zukotynski

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982803

    7. Silicon films: structural characterization

    8. Medium-range order in a-Si:H films prepared from hydrogen diluted silane (pages 548–551)

      Veronika Vavrunkova, Gijs van Elzakker, Miro Zeman and Pavol Sutta

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982759

    9. Silicon films: defects, electrical and optical characterization, and modeling

      Hydrogen distribution in the vicinity of dangling bonds in hydrogenated amorphous silicon (a-Si:H) (pages 552–555)

      M. Fehr, A. Schnegg, C. Teutloff, R. Bittl, O. Astakhov, F. Finger, B. Rech and K. Lips

      Version of Record online: 20 JAN 2010 | DOI: 10.1002/pssa.200982876

    10. Theoretical analysis and experimental results on the modulated photocarrier grating technique (pages 556–560)

      J. A. Schmidt, N. Budini, F. Ventosinos and C. Longeaud

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982707

    11. Hopping transport at localized band tail states in amorphous hydrogenated silicon (pages 561–565)

      Kazuro Murayama, Yukio Nomura and Tatsuya Fujisaki

      Version of Record online: 2 FEB 2010 | DOI: 10.1002/pssa.200982744

    12. Laplace Meyer–Neldel relation (pages 566–569)

      Hiroaki Okamoto, Yasushi Sobajima, Toshihiko Toyama and Akihisa Matsuda

      Version of Record online: 5 JAN 2010 | DOI: 10.1002/pssa.200982657

    13. Electron spin resonance in laser-crystallized polycrystalline silicon–germanium thin films (pages 570–573)

      M. Weizman, L.-P. Scheller, N. H. Nickel, K. Lips and B. Yan

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982897

    14. Real time monitoring of the crystallization process during the plasma annealing of amorphous silicon (pages 574–577)

      Naoki Ohta, Takashi Imamura, Hirokazu Shimizu, Tomohiro Kobayashi and Hajime Shirai

      Version of Record online: 12 JAN 2010 | DOI: 10.1002/pssa.200982720

    15. Fourier transform photocurrent measurement of thin silicon films on rough, conductive and opaque substrates (pages 578–581)

      Jakub Holovský, Űmit Dagkaldiran, Zdeněk Remeš, Adam Purkrt, Tibor Ižák, Aleš Poruba and Milan Vaněček

      Version of Record online: 13 JAN 2010 | DOI: 10.1002/pssa.200982890

    16. Nanocrystalline silicon; silicon and carbon nanostructures

      Relation of nanoscale and macroscopic properties of mixed-phase silicon thin films (pages 582–586)

      A. Fejfar, A. Vetushka, V. Kalusová, O. Čertík, M. Ledinský, B. Rezek, J. Stuchlík and J. Kočka

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982907

    17. The relationship between equation image and crystalline volume fraction in microcrystalline silicon growth (pages 587–590)

      Jakapan Chantana, Takuya Higuchi, Tomoyuki Nagai, Shota Sasaki, Yasushi Sobajima, Toshihiko Toyama, Chitose Sada, Akihisa Matsuda and Hiroaki Okamoto

      Version of Record online: 1 FEB 2010 | DOI: 10.1002/pssa.200982733

    18. Effect of local doping on the electronic properties of epitaxial graphene on SiC (pages 595–598)

      Jiří Červenka, Kevin van der Ruit and Kees Flipse

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982767

    19. Atomistic and theoretical modeling

      Hidden structure in amorphous solids (pages 599–604)

      F. Inam, James P. Lewis and D. A. Drabold

      Version of Record online: 4 FEB 2010 | DOI: 10.1002/pssa.200982877

    20. Structural models of a-Si:H with a low defect concentration: A first-principles molecular dynamics study (pages 605–608)

      K. Jarolimek, G. A. de Wijs, R. A. de Groot and M. Zeman

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982724

    21. Negative differential conductivity in the hopping transport model (pages 613–616)

      F. Jansson, A. V. Nenashev, S. D. Baranovskii, F. Gebhard and R. Österbacka

      Version of Record online: 20 JAN 2010 | DOI: 10.1002/pssa.200982687

    22. Alloys and carbon

      Polycrystalline silicon germanium thin films prepared by aluminum-induced crystallization (pages 617–620)

      Takehiro Iwasa, Tetsuya Kaneko, Isao Nakamura and Masao Isomura

      Version of Record online: 1 MAR 2010 | DOI: 10.1002/pssa.200982751

    23. Chalcogenides: structure, photoinduced changes

      Structural details of Ge-rich and silver-doped chalcogenide glasses for nanoionic nonvolatile memory (pages 621–626)

      Maria Mitkova, Yoshifumi Sakaguchi, Dmitri Tenne, Shekhar Kumar Bhagat and Terry L. Alford

      Version of Record online: 1 MAR 2010 | DOI: 10.1002/pssa.200982902

    24. 75As NMR relaxation in glassy Ge–As–Se (pages 635–638)

      Eldar Mammadov, P. Craig Taylor, Arneil Reyes, Salima Mehdiyeva and Phillip Kuhns

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982797

    25. Chalcogenides: phase-changes, characterization, modeling, sulfides and selenides

    26. Metal oxides and silicon oxide

      Modulated surface textures using zinc-oxide films for solar cells applications (pages 642–646)

      Olindo Isabella, Folkert Moll, Janez Krč and Miro Zeman

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982828

    27. Organics

      Doping of oligo(phenyl acetylene) with iodine vapour (pages 647–650)

      R. Bakker, P. Weijers, C. H. M. van der Werf, J. K. Rath and R. E. I. Schropp

      Version of Record online: 20 JAN 2010 | DOI: 10.1002/pssa.200982840

    28. Solar cells: silicon heterojunctions

      Properties of interfaces in amorphous/crystalline silicon heterojunctions (pages 651–656)

      Sara Olibet, Evelyne Vallat-Sauvain, Luc Fesquet, Christian Monachon, Aïcha Hessler-Wyser, Jérôme Damon-Lacoste, Stefaan De Wolf and Christophe Ballif

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982845

    29. High-forward-bias transport mechanism in a-Si:H/c-Si heterojunction solar cells (pages 657–660)

      T. F. Schulze, L. Korte, E. Conrad, M. Schmidt and B. Rech

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982747

    30. Solar cell optics

    31. Thin film solar cells and electrodes

      High efficiency amorphous and nanocrystalline silicon solar cells (pages 671–677)

      Baojie Yan, Guozhen Yue, Xixiang Xu, Jeffrey Yang and Subhendu Guha

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982886

    32. Significantly decreased production times for a-Si/µc-Si tandem cells on texture-etched ZnO:Al (pages 678–681)

      A. Gordijn, S. Schicho, S. Muthmann, T. Kilper, H. Zhu, E. Bunte and J. Hüpkes

      Version of Record online: 20 JAN 2010 | DOI: 10.1002/pssa.200982743

    33. In situ measurements of surface (photo)voltage of roll-to-roll deposited thin film silicon solar cells (pages 682–685)

      Bas B. Van Aken, Klaas J. Bakker, Maurits C. R. Heijna, Dennis Reid, Iain Baikie and Wim J. Soppe

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982741

    34. Optimization of the in situ series connection of amorphous silicon solar modules on glass and foil substrates (pages 686–690)

      Rainer Merz, Jens Kistner, Mohamed Ali Bouattour and Markus B. Schubert

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982850

    35. Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells (pages 691–694)

      E. V. Johnson, F. Dadouche, M. E. Gueunier-Farret, J. P. Kleider and P. Roca i Cabarrocas

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982723

    36. Metal oxide thin film transistors and silicon thin film transistors

      Metastability in multicomponent oxide transistors (pages 695–699)

      Warren B. Jackson, Randy Hoffman, Bao Yeh, Tim Emery, Tim Koch, C. McConica and Ohseung Kwon

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982894

    37. Detectors, sensors, other applications, and novel materials

      A fully integrated optical detector with a-Si:H based color photodiodes (pages 700–703)

      Krystian Watty, Christian Merfort, Konstantin Seibel, Lars Schöler and Markus Böhm

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982722

    38. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor (pages 704–707)

      Pierre Gidon, Benoit Giffard, Norbert Moussy, Pascale Parrein and Ludovic Poupinet

      Version of Record online: 20 JAN 2010 | DOI: 10.1002/pssa.200982716

    39. a-Si:H temperature sensor integrated in a thin film heater (pages 708–711)

      D. Caputo, G. de Cesare, A. Nascetti and R. Scipinotti

      Version of Record online: 18 JAN 2010 | DOI: 10.1002/pssa.200982719

    40. Lattice properties and dynamics, diffusion

      Modulus anomaly in magnesium matrix composites (pages 713–717)

      A. S. M. F. Chowdhury, D. Mari and R. Schaller

      Version of Record online: 10 DEC 2009 | DOI: 10.1002/pssa.200925441

    41. Direct observation of particle flow in semi-solid alloys by synchrotron X-ray micro-radioscopy (pages 718–723)

      Simon Zabler, Alexander Rack, Antonio Rueda, Lukas Helfen, Francisco García-Moreno and John Banhart

      Version of Record online: 18 NOV 2009 | DOI: 10.1002/pssa.200925329

    42. Nanostructures, thin films, surfaces and interfaces

      Unique surface textures of ZnO films deposited by chemical bath deposition (pages 724–729)

      Seung-Woo Seo, Dong-Hyun Lee, Young Sung Kim, Heeyeop Chae and Sung Min Cho

      Version of Record online: 18 NOV 2009 | DOI: 10.1002/pssa.200925436

    43. CdTe thin film solar cells prepared by a low-temperature deposition method (pages 730–733)

      V. D. Novruzov, N. M. Fathi, O. Gorur, M. Tomakin, A. I. Bayramov, S. Schorr and N. Mamedov

      Version of Record online: 18 NOV 2009 | DOI: 10.1002/pssa.200925217

    44. Effect of deposition conditions on percolation in single-walled carbon nanotube networks (pages 734–738)

      Qinghui Zhang, Pornnipa Vichchulada and Marcus D. Lay

      Version of Record online: 24 NOV 2009 | DOI: 10.1002/pssa.200723106

    45. Soft X-ray emission spectroscopy of low-dimensional SiO2/Si interfaces after Si+ ion implantation and ion beam mixing (pages 743–747)

      D. A. Zatsepin, S. Kaschieva, M. Zier, B. Schmidt and H.-J. Fitting

      Version of Record online: 1 MAR 2010 | DOI: 10.1002/pssa.200925469

    46. Charge-transport phenomena; superconductivity

      Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode (pages 748–752)

      G. Amin, I. Hussain, S. Zaman, N. Bano, O. Nur and M. Willander

      Version of Record online: 25 JAN 2010 | DOI: 10.1002/pssa.200925547

    47. Device-related phenomena

      Structural and electrical properties of rapidly annealed Ni/Mo Schottky barriers on n-type GaN (pages 753–759)

      I. Jyothi, V. Rajagopal Reddy, M. Siva Pratap Reddy, Chel-Jong Choi and Jong-Seong Bae

      Version of Record online: 17 NOV 2009 | DOI: 10.1002/pssa.200925308

    48. The compatibility approach in the classical theory of thermoelectricity seen from the perspective of variational calculus (pages 760–765)

      Wolfgang Seifert, Knud Zabrocki, G. Jeffrey Snyder and Eckhard Müller

      Version of Record online: 28 FEB 2010 | DOI: 10.1002/pssa.200925460

  8. Information for authors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Past & Present
    8. Original Papers
    9. Information for authors
    1. Information for authors (pages 766–767)

      Version of Record online: 11 MAR 2010 | DOI: 10.1002/pssa.201021709

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