physica status solidi (a)

Cover image for Vol. 207 Issue 5

May 2010

Volume 207, Issue 5

Pages 1001–1267

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
    1. Front Cover (Phys. Status Solidi A 5/2010)

      C. G. Van de Walle, J. L. Lyons and A. Janotti

      Article first published online: 14 MAY 2010 | DOI: 10.1002/pssa.201090010

      Thumbnail image of graphical abstract

      In the Feature Article by Chris G. Van de Walle, J. L. Lyons, and Anderson Janotti on p. 1024ff., mechanisms for electron accumulation on InN polar surfaces based on first-principles calculations are discussed. The ball-and-stick model shown in the cover picture illustrates a (2 × 2) In-adatom reconstruction on the InN c-plane (0001) surface. Indium atoms are purple, nitrogen blue. The orange isosurface illustrates the wave function of a surface state corresponding to In–In bonds. This state lies at an energy Δ above the conduction-band minimum (CBM) and pins the Fermi level EF, as illustrated by the band-bending diagram, resulting in an electron accumulation layer.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
    1. Inside Back Cover (Phys. Status Solidi A 5/2010)

      Akihiko Yoshikawa, Xinqiang Wang, Yoshihiro Ishitani and Akira Uedono

      Article first published online: 14 MAY 2010 | DOI: 10.1002/pssa.201090011

      Thumbnail image of graphical abstract

      The Feature Article by Yoshikawa et al. (pp. 1011–1023) discusses the challenging investigation on successful p-type doping of InN using Mg-acceptors by MBE. After growth of high purity InN epilayers with residual donor concentrations of mid 1017 cm−3 on GaN template, the authors first revealed that edge-component threading dislocations of about 1010 cm−2 are the most plausible residual donors in such high purity InN samples. On the basis of a systematic doping study on Mg-doped InN epilayers for a wide range of Mg concentrations from 1 × 1016 to 4 × 1020 cm−3, they have confirmed/achieved that InN can be successfully doped into p-type up to Mg-acceptor concentrations of about 3 × 1019 cm−3 and it turns into n-type again due to Mg over-doping effects.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
    1. Inside Back Cover (Phys. Status Solidi A 5/2010)

      J. H. Leach, X. Ni, J. Lee, Ü. Özgür, A. Matulionis and H. Morkoç

      Article first published online: 14 MAY 2010 | DOI: 10.1002/pssa.201090012

      Thumbnail image of graphical abstract

      The Feature Article by Morkoç and co-workers (pp. 1091–1100) centers around the not so intuitive phenomena in two types of GaN based devices, namely InGaN based LEDs and InAlN barrier GaN heterojunction FETs. In terms of the LEDs, the paper uncovers that the quantum efficiency degradation observed at high current injection levels is not necessarily of Auger recombination origin. Furthermore, nearly similar behavior of LEDs on c-plane and mplane suggests that the main driving force for the efficiency degradation is not polarization induced field either. The data along with their interpretation should set the stage for an accurate physics- based model to be developed. In terms of the FETs, the authors show that there is an optimum sheet density, which depends on drain bias or the electric field in the channel, at which the LO phonon lifetime is shortest, the velocity is highest, and the device degradation is least. The average optimum density is near 7 × 1012 cm−2 which challenges the proverbial notion that the higher the sheet density the better it is. Another outcome of this discussion is that heat dissipation takes the route of hot electrons giving off heat to LO phonons which in turn give it to LA phonons when they decay. Naturally, the shortest LO phonon lifetime is best for heat removal and thus the devices are more reliable in addition to electrons traversing at the highest velocity.

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
    1. Contents: (Phys. Status Solidi A 5/2010) (pages 1001–1007)

      Article first published online: 14 MAY 2010 | DOI: 10.1002/pssa.201021713

  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
    1. Recent and forthcoming publications in pss (page 1008)

      Article first published online: 14 MAY 2010 | DOI: 10.1002/pssa.201021714

  6. Preface

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
  7. E-MRS Fall Meeting 2009 - Symposium A

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
    1. Electronic properties

    2. Controlling the conductivity of InN (pages 1024–1036)

      C. G. Van de Walle, J. L. Lyons and A. Janotti

      Article first published online: 4 MAR 2010 | DOI: 10.1002/pssa.200983122

    3. Changes in the valence band structure of as-grown InN(0001)-2 × 2 surfaces upon exposure to oxygen and water (pages 1037–1040)

      Anja Eisenhardt, Stephanie Reiß, Marcel Himmerlich, Juergen A. Schaefer and Stefan Krischok

      Article first published online: 8 MAR 2010 | DOI: 10.1002/pssa.200983110

    4. Optical properties

    5. Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates (pages 1062–1065)

      P. Schley, J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, J. S. Speck and R. Goldhahn

      Article first published online: 8 MAR 2010 | DOI: 10.1002/pssa.200983104

    6. Optical properties of InN grown on Si(111) substrate (pages 1066–1069)

      E. Sakalauskas, P. Schley, J. Räthel, T. A. Klar, R. Müller, J. Pezoldt, K. Tonisch, J. Grandal, M. A. Sánchez-García, E. Calleja, A. Vilalta-Clemente, P. Ruterana and R. Goldhahn

      Article first published online: 28 FEB 2010 | DOI: 10.1002/pssa.200983102

    7. Structural properties

    8. Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer (pages 1074–1078)

      G. P. Dimitrakopulos, Th. Kehagias, A. Ajagunna, J. Kioseoglou, I. Kerasiotis, G. Nouet, A. P. Vajpeyi, Ph. Komninou and Th. Karakostas

      Article first published online: 8 MAR 2010 | DOI: 10.1002/pssa.200983103

    9. Investigation of InN layers grown by molecular beam epitaxy on GaN templates (pages 1079–1082)

      A. Vilalta-Clemente, G. R. Mutta, M. P. Chauvat, M. Morales, J. L. Doualan, P. Ruterana, J. Grandal, M. A. Sánchez-García, F. Calle, E. Valcheva and K. Kirilov

      Article first published online: 4 MAR 2010 | DOI: 10.1002/pssa.200983117

    10. In-vacancies in Si-doped InN (pages 1083–1086)

      C. Rauch, F. Reurings, F. Tuomisto, T. D. Veal, C. F. McConville, H. Lu, W. J. Schaff, C. S. Gallinat, G. Koblmüller, J. S. Speck, W. Egger, B. Löwe, L. Ravelli and S. Sojak

      Article first published online: 29 MAR 2010 | DOI: 10.1002/pssa.200983120

    11. Irradiation-induced defects in InN and GaN studied with positron annihilation (pages 1087–1090)

      Floris Reurings, Filip Tuomisto, Werner Egger, Benjamin Löwe, Luca Ravelli, Stanislav Sojak, Zuzanna Liliental-Weber, Rebecca E. Jones, Kin M. Yu, Wladek Walukiewicz and William J. Schaff

      Article first published online: 8 MAR 2010 | DOI: 10.1002/pssa.200983111

    12. Devices

      New twists in LEDs and HFETs based on nitride semiconductors (pages 1091–1100)

      J. H. Leach, X. Ni, J. Lee, Ü. Özgür, A. Matulionis and H. Morkoç

      Article first published online: 8 MAR 2010 | DOI: 10.1002/pssa.200983107

    13. The structure of InAlN/GaN heterostructures for high electron mobility transistors (pages 1105–1108)

      A. Vilalta-Clemente, M. A. Poisson, H. Behmenburg, C. Giesen, M. Heuken and P. Ruterana

      Article first published online: 28 FEB 2010 | DOI: 10.1002/pssa.200983119

  8. E-MRS Fall Meeting 2009 - Symposium H

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
    1. Metallic glasses

      Cu/Ti base multicomponent amorphous Cu47Ti33Zr11Ni8Si1 and nanocrystalline silver composites (pages 1109–1113)

      Jan Dutkiewicz, Lidia Lityńska-Dobrzyńska, Łukasz Rogal, Wojciech Maziarz and Tomasz Czeppe

      Article first published online: 15 APR 2010 | DOI: 10.1002/pssa.200983352

    2. Glass forming ability and nanocrystallization kinetics of Fe65Nb10B25 metallic glasses (pages 1114–1117)

      J. Torrens-Serra, J. Rodríguez-Viejo and M. T. Clavaguera-Mora

      Article first published online: 9 APR 2010 | DOI: 10.1002/pssa.200983353

    3. Severe plastic deformation

    4. Reduced activation ODS ferritic steel – recent development in high speed hot extrusion processing (pages 1128–1131)

      Zbigniew Oksiuta, Małgorzata Lewandowska, Krzysztof Kurzydlowski and Nadine Baluc

      Article first published online: 15 APR 2010 | DOI: 10.1002/pssa.200983365

    5. Investigation of fatique crack growth rate of Al 5484 ultrafine grained alloy after ECAP process (pages 1132–1135)

      Tomasz Brynk, Marcin Rasiński, Zbigniew Pakieła, Lech Olejnik and Krzysztof J. Kurzydłowski

      Article first published online: 9 APR 2010 | DOI: 10.1002/pssa.200983368

    6. Grain refinement in CuCrZr by SPD processing (pages 1136–1138)

      Mariusz Kulczyk, Beata Zysk, Małgorzata Lewandowska and Krzysztof J. Kurzydłowski

      Article first published online: 9 APR 2010 | DOI: 10.1002/pssa.200983378

    7. Nanocomposites

    8. Nanocrystalline materials

    9. Nanoparticles and thin films

      Carbon nanotube-supported bimetallic palladium–gold electrocatalysts for electro-oxidation of formic acid (pages 1160–1165)

      Cheng-Han Chen, Wei-Jen Liou, Hong-Ming Lin, She-Huang Wu, Anna Mikolajczuk, Leszek Stobinski, Andrzej Borodzinski, Piotr Kedzierzawski and Krzysztof Kurzydlowski

      Article first published online: 15 APR 2010 | DOI: 10.1002/pssa.200983397

    10. Sol–gel derived metal oxides doped with silver nanoparticles as tunable plasmonic materials (pages 1166–1169)

      Leonid Dolgov, Valter Kiisk, Valter Reedo, Aarne Maaroos, Ilmo Sildos and Jaak Kikas

      Article first published online: 15 APR 2010 | DOI: 10.1002/pssa.200983360

    11. Magnetic properties

      Lean neodymium Nd–Fe–B magnets containing minor addition of titanium (pages 1170–1173)

      Marzena Spyra, Daniela Derewnicka and Marcin Leonowicz

      Article first published online: 15 APR 2010 | DOI: 10.1002/pssa.200983395

    12. The effect of heat treatment on the phase constitution and magnetic properties of Pr9Fe60Co13Zr1Ti3B14 alloy ribbons (pages 1174–1177)

      Piotr Pawlik, Katarzyna Pawlik, Hywel A. Davies, Jerzy J. Wysłocki and Piotr Gębara

      Article first published online: 14 MAY 2010 | DOI: 10.1002/pssa.200983369

    13. Miscellaneous

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
    1. Materials preparation, manipulation, and structure

      High pressure torsion of binary Cu64.5Zr35.5 alloy (pages 1185–1189)

      Ádám Révész, Zsolt Kovács, Péter J. Szabó, Erhard Schafler, Lajos K. Varga and Sándor Hóbor

      Article first published online: 5 JAN 2010 | DOI: 10.1002/pssa.200925457

    2. Lattice properties and dynamics, diffusion

    3. Charge transport phenomena; superconductivity

    4. Interfacial resistive switching properties in Ti/La0.7Ca0.3MnO3/Pt sandwich structures (pages 1204–1209)

      X. J. Liu, X. M. Li, Q. Wang, R. Yang, X. Cao, W. D. Yu and L. D. Chen

      Article first published online: 5 JAN 2010 | DOI: 10.1002/pssa.200925409

    5. Optical properties

    6. Magnetic properties; magnetic resonances

      Characterization of spin crossover crystal surface by AFM (pages 1227–1231)

      C. Chong, B. Berini, K. Boukheddaden, E. Codjovi, J. Linarès, Y. Garcia, A. D. Naik and F. Varret

      Article first published online: 28 DEC 2009 | DOI: 10.1002/pssa.200925502

    7. Dielectric and ferroelectric properties

    8. Device-related phenomena

      Threshold voltage shift under electrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors (pages 1245–1248)

      Maher Oudwan, Oumkelthoum Moustapha, Alexey Abramov, Dmitriy Daineka, Yvan Bonnassieux and Pere Roca i Cabarrocas

      Article first published online: 14 DEC 2009 | DOI: 10.1002/pssa.200925403

    9. Effectively surface-passivated aluminium-doped p+ emitters for n-type silicon solar cells (pages 1249–1251)

      Michael Rauer, Christian Schmiga, Martin Hermle and Stefan W. Glunz

      Article first published online: 14 DEC 2009 | DOI: 10.1002/pssa.200925507

    10. Control of charge separation by electric field manipulation in polymer-oxide hybrid organic photovoltaic bilayer devices (pages 1257–1265)

      Matthew S. White, Dana C. Olson, Nikos Kopidakis, Alexandre M. Nardes, David S. Ginley and Joseph J. Berry

      Article first published online: 15 DEC 2009 | DOI: 10.1002/pssa.200925591

  10. Information for authors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. E-MRS Fall Meeting 2009 - Symposium A
    9. E-MRS Fall Meeting 2009 - Symposium H
    10. Original Papers
    11. Information for authors
    1. Information for authors (pages 1266–1267)

      Article first published online: 14 MAY 2010 | DOI: 10.1002/pssa.201021715

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