physica status solidi (a)

Cover image for physica status solidi (a)

June 2010

Volume 207, Issue 6

Pages 1269–1515

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Front Cover (Phys. Status Solidi A 6/2010)

      Marius Grundmann, Heiko Frenzel, Alexander Lajn, Michael Lorenz, Friedrich Schein and Holger von Wenckstern

      Version of Record online: 14 JUN 2010 | DOI: 10.1002/pssa.201090013

      Thumbnail image of graphical abstract

      Transparent semiconducting oxides are used to fabricate transistors that outperform devices based on amorphous silicon. Since the first reports on oxide transistors in 2003, the field has seen tremendous progress. Currently MESFETs exhibit superior performance compared to MISFETs. Inverters and NOR gates have been realized, enabling a complete logic based on oxide transistors. The cover image, pointing to the Feature Article by Marius Grundmann and co-workers (p. 1437), depicts a chip with a number of transparent inverters based on ZnO:Mg channels.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Back Cover (Phys. Status Solidi A 6/2010)

      Y. Mori, Y. Kitaoka, M. Imade, F. Kawamura, N. Miyoshi, M. Yoshimura and T. Sasaki

      Version of Record online: 14 JUN 2010 | DOI: 10.1002/pssa.201090014

      Thumbnail image of graphical abstract

      The Na flux method has a high potential of synthesizing high quality GaN crystals, although it has been difficult to grow GaN crystals of large size with a moderate growth rate. In the article by Mori et al. (p. 1283), carbon doping into the solution and forced induction of the solution flow are shown to be effective to control the nucleation and solution conditions in the Na flux method. The authors show that it is possible to grow 2′′-diameter GaN crystals with high quality and high uniformity. The absorption edge of the GaN crystal at 372 nm was observed without any detectable absorption peaks. GaN crystals grown by the Na flux method showed a relatively low resistivity below 1 W cm without any intentional doping. The carrier mobility in the unintentionally doped sample was over 900 cm2/V cm. The resistivity of the GaN crystal could be reduced by Ge doping down to 0.016 W cm and increased by Zn doping up to 108 W cm.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Back Cover (Phys. Status Solidi A 6/2010)

      K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Araki and Y. Nanishi

      Version of Record online: 14 JUN 2010 | DOI: 10.1002/pssa.201090015

      Thumbnail image of graphical abstract

      In the article by Ke Wang et al. (p. 1356), strong optical polarization anisotropy has been revealed for non-polar InN epilayers (a-plane and m-plane) in photoluminescence (PL) and absorption experiments. The PL intensity for polarization perpendicular to the c-axis (E⟂) is up to four times that of polarization parallel to the c-axis (E∥c) for a-plane InN, and this ratio is up to seven for m-plane InN. The absorption edges of a-plane samples for the two polarizations are separated by 19 meV, with E∥c at the higher energy side. Furthermore, the strain has been analyzed using X-ray diffraction measurements, taking the orthorhombic distortion of the lattice into account. Then the experimental results have been compared with a theoretical calculation of the influence of anisotropic biaxial in-plane strain on the transition energies and relative oscillator strength.

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
  5. Most accessed Early View articles

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Most accessed Early View articles (page 1276)

      Version of Record online: 14 JUN 2010 | DOI: 10.1002/pssa.201021717

  6. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Bulk crystal growth

    2. Growth of GaN crystals by Na flux LPE method (pages 1283–1286)

      Y. Mori, Y. Kitaoka, M. Imade, F. Kawamura, N. Miyoshi, M. Yoshimura and T. Sasaki

      Version of Record online: 26 MAY 2010 | DOI: 10.1002/pssa.200983482

    3. Fabrication of freestanding 2″-GaN wafers by hydride vapour phase epitaxy and self-separation during cooldown (pages 1287–1291)

      Frank Lipski, Thomas Wunderer, Stephan Schwaiger and Ferdinand Scholz

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983517

    4. AlN synthesis on AlN/SiC template using Li–Al–N solvent (pages 1292–1294)

      Yoshihiro Kangawa and Koichi Kakimoto

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssa.200983566

    5. Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire (pages 1295–1298)

      Alexander Usikov, Vitali Soukhoveev, Lisa Shapovalov, Alexander Syrkin, Vladimir Ivantsov, Bernard Scanlan, Alexey Nikiforov, Andre Strittmatter, Noble Johnson, Jian-Guo Zheng, Philippe Spiberg and Hussein El-Ghoroury

      Version of Record online: 26 MAY 2010 | DOI: 10.1002/pssa.200983655

    6. Defect engineering and structural characterization

      Defects in highly Mg-doped AlN (pages 1299–1301)

      Kentaro Nonaka, Toshiaki Asai, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki

      Version of Record online: 12 MAY 2010 | DOI: 10.1002/pssa.200983504

    7. Growth and electron microscopy study of GaN/MgAl2O4 heterostructures (pages 1302–1304)

      Guoqiang Li, Shao-Ju Shih and Li Fu

      Version of Record online: 31 MAY 2010 | DOI: 10.1002/pssa.200983642

    8. Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes (pages 1305–1308)

      Mingwei Zhu, Shi You, Theeradetch Detchprohm, Tanya Paskova, Edward A. Preble and Christian Wetzel

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983645

    9. Devices

      Optical gain and gain saturation of blue-green InGaN quantum wells (pages 1309–1312)

      Dmitry Sizov, Rajaram Bhat, Jerome Napierala, Chad Gallinat, Kechang Song, Donald Allen and Chung-en Zah

      Version of Record online: 26 MAY 2010 | DOI: 10.1002/pssa.200983540

    10. Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3 (pages 1313–1317)

      V. N. Jmerik, A. M. Mizerov, T. V. Shubina, A. A. Toropov, K. G. Belyaev, A. A. Sitnikova, M. A. Yagovkina, P. S. Kop'ev, E. V. Lutsenko, A. V. Danilchyk, N. V. Rzheutskii, G. P. Yablonskii, B. Monemar and S. V. Ivanov

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983612

    11. True green InGaN laser diodes (pages 1318–1322)

      Stephan Lutgen, Adrian Avramescu, Teresa Lermer, Desiree Queren, Jens Müller, Georg Bruederl and Uwe Strauss

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983620

    12. GaN/AlN quantum disc single-nanowire photodetectors (pages 1323–1327)

      L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, R. Songmuang, E. Monroy, S. T. Chou, Y. T. Lin, P. H. Tseng, L. W. Tu, F. Fortuna, L. Zagonel, M. Kociak and O. Stephan

      Version of Record online: 25 MAY 2010 | DOI: 10.1002/pssa.200983652

    13. Waveguide design of green InGaN laser diodes (pages 1328–1331)

      Teresa Lermer, Marc Schillgalies, Andreas Breidenassel, Désirée Queren, Christoph Eichler, Adrian Avramescu, Jens Müller, Wolfgang Scheibenzuber, Ulrich Schwarz, Stephan Lutgen and Uwe Strauss

      Version of Record online: 12 MAY 2010 | DOI: 10.1002/pssa.200983410

    14. Electrical, optical and magnetic properties

      Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy (pages 1332–1334)

      Maojun Wang, Chung Choi Cheng, Chris D. Beling, Stevenson Fung and Kevin J. Chen

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983463

    15. Determination of the valence band offsets at HfO2/InN(0001) and InN/In0.3Ga0.7N(0001) heterojunctions using X-ray photoelectron spectroscopy (pages 1335–1337)

      Anja Eisenhardt, Andreas Knübel, Ralf Schmidt, Marcel Himmerlich, Joachim Wagner, Juergen A. Schaefer and Stefan Krischok

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983544

    16. Electronic devices

      Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures (pages 1338–1341)

      Lutz Kirste, Taek Lim, Rolf Aidam, Stefan Müller, Patrick Waltereit and Oliver Ambacher

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983501

    17. Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate (pages 1342–1344)

      Martin Eickelkamp, Dirk Fahle, Johannes Lindner, Michael Heuken, Christian Lautensack, Holger Kalisch, Rolf H. Jansen and Andrei Vescan

      Version of Record online: 21 MAY 2010 | DOI: 10.1002/pssa.200983554

    18. Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures (pages 1345–1347)

      Jacob H. Leach, Mo Wu, Xianfeng Ni, Xing Li, Ümit Özgür, Hadis Morkoç, Juozas Liberis, Emilis Šermukšnis, Arvydas Matulionis, Hailing Cheng, Çagliyan Kurdak and Yong-Tae Moon

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983556

    19. AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications (pages 1348–1352)

      Shiping Guo, Xiang Gao, Daniel Gorka, Jinwoork W. Chung, Han Wang, Tomas Palacios, Antonio Crespo, James K. Gillespie, Kelson Chabak, Manuel Trejo, Virginia Miller, Mark Bellot, Glen Via, Mauricio Kossler, Howard Smith and David Tomich

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983621

    20. Emerging materials

      Impact of n-type doping on the terahertz surface emission from c-plane InN (pages 1353–1355)

      V. M. Polyakov, V. Cimalla, V. Lebedev and F. Schwierz

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983539

    21. Optical polarization anisotropy of nonpolar InN epilayers (pages 1356–1360)

      K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Araki and Y. Nanishi

      Version of Record online: 26 MAY 2010 | DOI: 10.1002/pssa.200983657

    22. Epitaxial growth

      Facet formation for laser diodes on nonpolar and semipolar GaN (pages 1361–1364)

      Jens Rass, Tim Wernicke, Raimund Kremzow, Wilfred John, Sven Einfeldt, Patrick Vogt, Markus Weyers and Michael Kneissl

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983425

    23. MBE growth of cubic AlN on 3C-SiC substrate (pages 1365–1368)

      Thorsten Schupp, Georg Rossbach, Pascal Schley, Rüdiger Goldhahn, Marcus Röppischer, Norbert Esser, Christoph Cobet, Klaus Lischka and Donat Josef As

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983437

    24. In-clustering effects in InAlN and InGaN revealed by high pressure studies (pages 1369–1371)

      I. Gorczyca, T. Suski, A. Kamińska, G. Staszczak, H. P. D. Schenk, N. E. Christensen and A. Svane

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983491

    25. Selectivity enhancement by hydrogen addition in selective area metal-organic vapor phase epitaxy of GaN and InGaN (pages 1375–1378)

      Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki and Yoshiaki Nakano

      Version of Record online: 14 JUN 2010 | DOI: 10.1002/pssa.200983606

    26. The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD (pages 1379–1382)

      G. Durkaya, M. Buegler, R. Atalay, I. Senevirathna, M. Alevli, O. Hitzemann, M. Kaiser, R. Kirste, A. Hoffmann and N. Dietz

      Version of Record online: 25 MAY 2010 | DOI: 10.1002/pssa.200983622

    27. LEDs

      Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties (pages 1383–1385)

      Alexander Polyakov, Anatoliy Govorkov, Nikolay Smirnov, Alexander Markov, In-Hwan Lee, Haeng-Keun Ahn, Sergey Karpov and Stephen Pearton

      Version of Record online: 12 MAY 2010 | DOI: 10.1002/pssa.200983413

    28. Growth of InGaN/GaN light emitting diodes by MOCVD with a thin tapered reactor cell (pages 1386–1388)

      Kenji Iso, Ryohei Takaki, Yoshiyasu Ishihama, Tomokazu Inagawa and Yuzuru Takahashi

      Version of Record online: 25 MAY 2010 | DOI: 10.1002/pssa.200983434

    29. InGaN-based 518 and 488 nm laser diodes on c-plane GaN substrate (pages 1389–1392)

      Takashi Miyoshi, Shingo Masui, Takeshi Okada, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama and Takashi Mukai

      Version of Record online: 21 MAY 2010 | DOI: 10.1002/pssa.200983446

    30. High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient (pages 1393–1396)

      Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983448

    31. Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE (pages 1397–1399)

      Atsushi Nishikawa, Takashi Kawasaki, Naoki Furukawa, Yoshikazu Terai and Yasufumi Fujiwara

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983467

    32. Stress relaxed nanoepitaxy GaN for growth of phosphor-free indium-rich nanostructures incorporated in apple-white LEDs (pages 1400–1403)

      C. B. Soh, W. Liu, S. J. Chua, N. S. S. Ang, A. M. Yong, S. C. Lai and J. H. Teng

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983561

    33. Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates (pages 1404–1406)

      Bin Liu, Ping Han, Zili Xie, Rong Zhang, Chengxiang Liu, Xiangqian Xiu, Xuemei Hua, Hai Lu, Peng Chen, Youdou Zheng and Shengming Zhou

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983571

    34. GaInN-based LED structures on selectively grown semi-polar crystal facets (pages 1407–1413)

      Ferdinand Scholz, Thomas Wunderer, Martin Feneberg, Klaus Thonke, Andrei Chuvilin, Ute Kaiser, Sebastian Metzner, Frank Bertram and Jürgen Christen

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983633

    35. Manufacturing issues

      Degradation mechanism of light-emitting diodes on patterned sapphire substrate (pages 1414–1417)

      Sei-Min Kim, Young-Boo Moon, Il-Kyu Park and Ja-Soon Jang

      Version of Record online: 25 MAY 2010 | DOI: 10.1002/pssa.200983581

    36. Nanostructures

      MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAs (pages 1418–1420)

      Pawinee Klangtakai, Sakuntam Sanorpim, Ryuji Katayama and Kentaro Onabe

      Version of Record online: 17 MAY 2010 | DOI: 10.1002/pssa.200983545

    37. GaN/AlGaN nanostructures for intersubband optoelectronics (pages 1421–1424)

      M. Tchernycheva, H. Macchadani, L. Nevou, J. Mangeney, F. H. Julien, P. K. Kandaswamy, A. Wirthmüller, E. Monroy, A. Vardi, S. Schacham and G. Bahir

      Version of Record online: 12 MAY 2010 | DOI: 10.1002/pssa.200983565

    38. GaN-based nanowires: From nanometric-scale characterization to light emitting diodes (pages 1425–1427)

      A.-L. Bavencove, G. Tourbot, E. Pougeoise, J. Garcia, P. Gilet, F. Levy, B. André, G. Feuillet, B. Gayral, B. Daudin and Le Si Dang

      Version of Record online: 26 MAY 2010 | DOI: 10.1002/pssa.200983603

    39. Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K (pages 1428–1430)

      J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel and J. Gutowski

      Version of Record online: 21 MAY 2010 | DOI: 10.1002/pssa.200983648

    40. Theory and simulation

      Theoretical investigations of polytypism in AlN thin films (pages 1431–1434)

      Tomonori Ito, Takumi Ito, Daisuke Ammi, Toru Akiyama and Kohji Nakamura

      Version of Record online: 12 MAY 2010 | DOI: 10.1002/pssa.200983431

  7. Feature Article

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Transparent semiconducting oxides: materials and devices (pages 1437–1449)

      Marius Grundmann, Heiko Frenzel, Alexander Lajn, Michael Lorenz, Friedrich Schein and Holger von Wenckstern

      Version of Record online: 10 MAY 2010 | DOI: 10.1002/pssa.200983771

  8. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production (pages 1450–1454)

      Rolf Aidam, Patrick Waltereit, Lutz Kirste, Michael Dammann and Rüdiger Quay

      Version of Record online: 28 APR 2010 | DOI: 10.1002/pssa.201026020

  9. Frontispiece

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Frontispiece (page 1455)

      Version of Record online: 14 JUN 2010 | DOI: 10.1002/pssa.201021718

  10. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Charge transport phenomena; superconductivity

      Superconducting and microstructural properties of Mg1−xAgxB2 (pages 1456–1459)

      Kiran Singh, Rajneesh Mohan, Naresh Kumar, Shovit Bhattacharya, Sudhindra Rayaprol, N. K. Gaur and Ram K. Singh

      Version of Record online: 5 JAN 2010 | DOI: 10.1002/pssa.200925486

    2. Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study (pages 1460–1463)

      Yiuri Garino, Tokuyuki Teraji, Satoshi Koizumi, Yasuo Koide and Toshimichi Ito

      Version of Record online: 8 FEB 2010 | DOI: 10.1002/pssa.200925448

    3. Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction (pages 1464–1467)

      Süleyman Tekmen, Emre Gür, Hatice Asıl, Kübra Çınar, Cevdet Coşkun and Sebahattin Tüzemen

      Version of Record online: 1 MAR 2010 | DOI: 10.1002/pssa.200925488

    4. Optical properties

    5. Polarization dependences of absorption and luminescence spectra on each crystal face of α-quaterthiophene and α-quinquethiophene (pages 1474–1480)

      Shin Tanaka, Yoshitaka Katano, Yuki Kimura, Takehisa Yoshinari, Shin-ichiro Nagasaka, Hiroki Itoh and Yasunao Kuriyama

      Version of Record online: 1 MAR 2010 | DOI: 10.1002/pssa.201026019

    6. Magnetic properties; magnetic resonances

      Phase stability and magnetic properties of the Heusler alloy Mn2CuAl ribbons (pages 1481–1484)

      Z. Q. Feng, H. Z. Luo, Y. X. Wang, Y. X. Li, W. Zhu, G. H. Wu and F. B. Meng

      Version of Record online: 28 FEB 2010 | DOI: 10.1002/pssa.200925564

    7. Room temperature magnetoresistance of La0.7Ca0.2Ba0.1MnO3/Ag thin films (pages 1485–1488)

      Y. Kuru, H.-U. Habermeier, R. Tripathi, V. P. S. Awana and H. Kishan

      Version of Record online: 28 FEB 2010 | DOI: 10.1002/pssa.200925570

    8. Device-related phenomena

      Effect of deep-level states on current–voltage characteristics and electroluminescence of blue and UV light-emitting diodes (pages 1489–1496)

      R. Nana, P. Gnanachchelvi, M. A. Awaah, M. H. Gowda, A. M. Kamto, Y. Wang, M. Park and K. Das

      Version of Record online: 13 JAN 2010 | DOI: 10.1002/pssa.200925596

    9. Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors (pages 1505–1508)

      Serguei A. Chevtchenko, Frank Brunner, Joachim Würfl and Günther Tränkle

      Version of Record online: 8 FEB 2010 | DOI: 10.1002/pssa.200925599

    10. Minority carrier injection limited current in Re/4H-SiC Schottky diodes (pages 1509–1513)

      K. Sarpatwari, S. E. Mohney, S. Ashok and O. O. Awadelkarim

      Version of Record online: 8 FEB 2010 | DOI: 10.1002/pssa.200925339

  11. Information for authors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Contents
    6. Most accessed Early View articles
    7. Original Papers
    8. Feature Article
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Information for authors (pages 1514–1515)

      Version of Record online: 14 JUN 2010 | DOI: 10.1002/pssa.201021719

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