physica status solidi (a)

Cover image for Vol. 207 Issue 8

August 2010

Volume 207, Issue 8

Pages 1777–2004

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Editor's Choice
    7. Original Papers
    8. Errata
    1. Front Cover (Phys. Status Solidi A 8/2010)

      R. Schaarschuch, M. Reibold, S. Haindl, V. Neu, J. Thomas, T. Gemming, C.-G. Oertel, B. Holzapfel, L. Schultz and W. Skrotzki

      Version of Record online: 18 AUG 2010 | DOI: 10.1002/pssa.201090017

      Thumbnail image of graphical abstract

      The Editor's Choice article by Schaarschuch et al. (pp. 1785–1791 in this issue) centers around hybrid structures based on superconducting Nb and highly coercive ferromagnetic SmCo5 films fabricated by pulsed laser deposition. Such structures are interesting from the point of interplay between ferromagnetic and superconductor phases in close vicinity and from the point of growth behaviour for thin film heterostructures. Thus, by varying the thickness of a Cr spacer layer between superconductor and ferromagnet, the actual stray field strength on the superconductor can be controlled. Thin film architectures of both SmCo5 on Nb and the reversed system were examined by transmission electron microscopy and X-ray diffraction with regard to their microstructure and epitaxial relationship, respectively. The cover image shows the cross-sectional HRTEM image (left) and the colour coded EFTEM image (right) of a Nb/Cr/SmCo5 layer system with a nominal 5 nm Cr spacer layer between superconductor and ferromagnet.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Editor's Choice
    7. Original Papers
    8. Errata
    1. Back Cover (Phys. Status Solidi A 8/2010)

      R. Kumaresan, H. Umezawa and S. Shikata

      Version of Record online: 18 AUG 2010 | DOI: 10.1002/pssa.201090018

      Thumbnail image of graphical abstract

      Diamond Schottky barrier diodes (SBDs) are promising candidates for high current operation. Towards achieving this, the device series resistance (Rs) has to be manipulated carefully, and the parasitic resistance [R(p+)] originating from the p+ layer of the diamond SBDs has a significant influence in constituting the device Rs. For the first time, Kumaresan et al. (see the article on pp. 1997-2001) carried out a systematic analysis of the parasitic resistance of pseudo-vertical type diamond SBDs, and for this the authors designed an elegant structure, as shown in the cover image at top. The left bottom image is a curve fitting analysis result of device Rs which reveals the significance of parasitic resistance on device Rs, and the right bottom image reveals that the parasitic resistance from p+ layer can be engineered by varying its thickness suitably. This study paves a way towards designing the p+ layer thickness for achieving a high current transport of the fabricated device, by means of minimizing the parasitic resistance of the p+ layer.

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Editor's Choice
    7. Original Papers
    8. Errata
  4. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Editor's Choice
    7. Original Papers
    8. Errata
  5. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Editor's Choice
    7. Original Papers
    8. Errata
    1. Textured growth and microstructure of pulsed laser deposited Nb/Cr/SmCo5 hybrid structures (pages 1785–1791)

      R. Schaarschuch, M. Reibold, S. Haindl, V. Neu, J. Thomas, T. Gemming, C.-G. Oertel, B. Holzapfel, L. Schultz and W. Skrotzki

      Version of Record online: 18 AUG 2010 | DOI: 10.1002/pssa.201026181

  6. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Editor's Choice
    7. Original Papers
    8. Errata
    1. Materials preparation, manipulation, and structure

      The effect of (Li,Ce) doping in Aurivillius phase material (Na0.52K0.42Li0.06)0.5Bi2.5(Nb1.88Sb0.06Ta0.06)O9 (pages 1792–1795)

      Zhi-Gang Gai, Yuan-Yuan Feng, Jin-Feng Wang, Ming-Lei Zhao, Li-Mei Zheng, Chun-Ming Wang, Shujun Zhang and Thomas R. Shrout

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925289

    2. Atomic interactions and hydrogen-induced γ* phase in fcc iron–nickel alloys (pages 1796–1801)

      D. N. Movchan, V. N. Shyvanyuk, B. D. Shanina and V. G. Gavriljuk

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925548

    3. Scanning X-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon (pages 1807–1810)

      Daniel Macdonald, Fiacre Rougieux, Yves Mansoulie, Jason Tan, David Paterson, Daryl L. Howard, Martin D. de Jonge and Chris G. Ryan

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.201026137

    4. Structure, magnetic, and optical properties in Zn0.98−xCu0.02FexO diluted magnetic semiconductors (pages 1811–1814)

      Huilian Liu, Jinghai Yang, Zhong Hua, Yongjun Zhang, Lili Yang and Dandan Wang

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925456

    5. Glass-substrate-based high-performance ZnO-TFT by using a Ta2O5 insulator modified by thin SiO2 films (pages 1815–1819)

      L. Zhang, J. Li, X. W. Zhang, D. B. Yu, X. Y. Jiang and Z. L. Zhang

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925440

    6. Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical–thermal model (pages 1820–1826)

      Xiao Tang, Michel Rousseau, Nicolas Defrance, Virginie Hoel, Ali Soltani, Robert Langer and Jean-Claude De Jaeger

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925321

    7. Lattice properties and dynamics, diffusion

    8. TEM analysis of (Ni,Fe)Si2 precipitates in Si (pages 1832–1844)

      Sabine Langkau, Gerald Wagner, Gert Kloess and Matthias Heuer

      Version of Record online: 29 JUN 2010 | DOI: 10.1002/pssa.200925309

    9. Nanostructures, thin films, surfaces and interfaces

      The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition (pages 1845–1849)

      Seungjun Lee, Seokhwan Bang, Joohyun Park, Soyeon Park, Wooho Jeong and Hyeongtag Jeon

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925514

    10. Structural evolution of ZnO films deposited by rf magnetron sputtering on glass substrate (pages 1850–1853)

      Yan-Ping Liao, Jian-Hua Zhang, Shu-Xin Li, Zhan-Sheng Guo, Jin Cao, Wen-Qing Zhu and Xifeng Li

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925131

    11. Refined carbothermal reduction approach for large scale, uniform growth of vertically aligned ZnO nanowires (pages 1854–1858)

      Ji-Seung Lee, Dong-Kyoon Lee, Jaehyun Kim, Junghan Kim and Heesun Yang

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925318

    12. The physical properties of SnS films grown on lattice-matched and amorphous substrates (pages 1864–1869)

      M. Devika, N. Koteeswara Reddy, M. Prashantha, K. Ramesh, S. Venkatramana Reddy, Y. B. Hahn and K. R. Gunasekhar

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925379

    13. Fabrication of novel Ag nanowires/poly(vinylidene fluoride) nanocomposite film with high dielectric constant (pages 1870–1873)

      Wei Zheng, Xiaofeng Lu, Wei Wang, Zhaojie Wang, Mingxin Song, Yu Wang and Ce Wang

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925520

    14. Synthesis and enhanced green photoluminescence emission from BCT ZnS nanocrystals (pages 1874–1879)

      C. S. Tiwary, P. Kumbhakar, A. K. Mondal and A. K. Mitra

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925341

    15. Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition (pages 1895–1899)

      Muhammad Jamil, Tianming Xu, Tahir Zaidi, Andrew Melton, Balakrishnam Jampana, Chee-Loon Tan, Boon S. Ooi and Ian T. Ferguson

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925462

    16. Comparative study between zinc oxide elaborated by spray pyrolysis, electron beam evaporation and rf magnetron techniques (pages 1900–1904)

      A. Khoury, R. al Asmar, M. Abdallah, G. El Hajj Moussa and A. Foucaran

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925054

    17. Electronic states

      Electrochemical preparation of MoO3 buffer layer deposited onto the anode in organic solar cells (pages 1905–1911)

      M. Gacitua, Y. Boutaleb, L. Cattin, S. Yapi Abe, Y. Lare, G. Soto, G. Louarn, M Morsli, R. Rehamnia, M. A. del Valle, A. Drici and J. C. Bernède

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925602

    18. Charge transport phenomena; superconductivity

      Electrical resistance variation of carbon-nanotube networks due to surface modification of glass substrate (pages 1912–1917)

      Eui Yun Jang, Dong Kyun Seo, Seoho Jung, Taewoo Kim, Tae June Kang and Yong Hyup Kim

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925442

    19. Low-temperature transmission electron microscopy study of superconducting Nb3Sn (pages 1918–1921)

      G. Schierning, R. Theissmann, M. Acet, M. Hoelzel, J. Gruendmayer and J. Zweck

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925489

    20. Charge order quenching, Griffiths phase, and magnetotransport in polycrystalline Pr0.58Ca0.42−ySryMnO3 thin films (pages 1922–1929)

      Vasudha Agarwal, M. P. Singh, P. K. Siwach, P. Fournier and H. K. Singh

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.201026106

    21. Optical properties

      1.3 µm InAs/GaAs quantum dots with broad emission spectra (pages 1930–1933)

      Peng Tian, Lirong Huang, Bo Jiang, Shuping Fei and Dexiu Huang

      Version of Record online: 8 JUN 2010 | DOI: 10.1002/pssa.201026232

    22. Unveiling the defect levels in SnS thin films for photovoltaic applications using photoluminescence technique (pages 1934–1939)

      T. H. Sajeesh, N. Poornima, C. Sudha Kartha and K. P. Vijayakumar

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925593

    23. Scanning X-ray excited optical luminescence microscopy of multi-crystalline silicon (pages 1940–1943)

      O. Vyvenko, T. Arguirov, W. Seifert, I. Zizak, M. Trushin and M. Kittler

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.201000002

    24. Dose rate effects on the performance of MWCVD diamond films as TL gamma radiation dosimeter (pages 1944–1948)

      E. Cruz-Zaragoza, S. Gastélum, R. Meléndrez, V. Chernov and M. Barboza-Flores

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925361

    25. Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd2O3 thin films (pages 1949–1953)

      Patrick Wellenius, Eric R. Smith, Pae C Wu, Henry O. Everitt and John F. Muth

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.201026071

    26. Magnetic properties; magnetic resonances

      Design of magnetic properties of arrays of magnetostatically coupled glass-covered magnetic microwires (pages 1954–1959)

      V. Rodionova, M. Ipatov, M. Ilyn, V. Zhukova, N. Perov, J. Gonzalez and A. Zhukov

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925497

    27. Dielectric and ferroelectric properties

      Dipolar glass phase in ferrielectrics: CuInP2S6 and Ag0.1Cu0.9InP2S6 crystals (pages 1960–1967)

      Andrius Dziaugys, Juras Banys, Jan Macutkevic, Ricardas Sobiestianskas and Yulian Vysochanskii

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925346

    28. Device-related phenomena

    29. ZnO-based photodetector with internal photocurrent gain (pages 1972–1977)

      L. A. Kosyachenko, G. V. Lashkarev, V. M. Sklyarchuk, A. I. Ievtushenko, O. F. Sklyarchuk, V. I. Lazorenko and A. Ulyashin

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925443

    30. InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide (pages 1993–1996)

      X. Li, H. Y. Liu, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ü. Özgür and H. Morkoç

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.201026053

  7. Errata

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Editor's Choice
    7. Original Papers
    8. Errata
    1. You have free access to this content
      Erratum: Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers [Phys. Status Solidi A 206, No. 9, 2000–2003 (2009)] (page 2003)

      G. Frangieh, M.-A. Pinault, J. Barjon, T. Tillocher, F. Jomard and J. Chevallier

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.201026047

      This article corrects:

      Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

      Vol. 206, Issue 9, 2000–2003, Version of Record online: 31 AUG 2009

    2. You have free access to this content
      Erratum: Effects in CVD diamond exposed to fusion plasmas [Phys. Status Solidi A 206, No. 9, 2028–2032 (2009)] (page 2004)

      S. Porro, G. De Temmerman, P. John, S. Lisgo, I. Villalpando and J. I. B. Wilson

      Version of Record online: 13 JUL 2010 | DOI: 10.1002/pssa.201083670

      This article corrects:

      Effects in CVD diamond exposed to fusion plasmas

      Vol. 206, Issue 9, 2028–2032, Version of Record online: 11 AUG 2009

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