physica status solidi (a)

Cover image for Vol. 207 Issue 9

September 2010

Volume 207, Issue 9

Pages 2005–2208

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Preface
    7. Editor's Choice
    8. Original Papers
    9. Information for authors
    1. Front Cover (Phys. Status Solidi A 9/2010)

      Soumen Mandal, Cécile Naud, Oliver A. Williams, Étienne Bustarret, Franck Omnès, Pierre Rodière, Tristan Meunier, Laurent Saminadayar and Christopher Bäuerle

      Version of Record online: 8 SEP 2010 | DOI: 10.1002/pssa.201090019

      Thumbnail image of graphical abstract

      In the Editor's Choice article of this issue (pp. 2017–2022), Mandal et al. report on the transport properties of nanostructured boron-doped diamond thin films. Using electron beam lithography, nanostructures from boron-doped nanocrystalline superconducting diamond have been fabricated and devices of characteristic size less than 100 nm have been prepared (see cover image, bottom left). The aspect ratio was as high as 1:3, the anisotropy of the plasma etching allowing to pattern one single grain. These structures have critical temperatures in the Kelvin range, similar to what is observed in “bulk”; only a slight decrease of Tc is observed for wires thinner than 100 nm. Critical fields close to 100 mT were measured and traces of superconductivity were observed even under magnetic fields as strong as 2 T. This study proves that superconductivity in boron-doped diamond is a very robust phenomenon which makes it a promising candidate for future applications in the field of superconducting nanoelectromechanical systems.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Preface
    7. Editor's Choice
    8. Original Papers
    9. Information for authors
    1. Back Cover (Phys. Status Solidi A 9/2010)

      H. Pinto, R. Jones, J. P. Goss and P. R. Briddon

      Version of Record online: 8 SEP 2010 | DOI: 10.1002/pssa.201090020

      Thumbnail image of graphical abstract

      Different mechanisms of doping graphene are studied by Pinto et al. (pp. 2131–2136) using density functional theory. A first type can be called electronic doping and occurs when there is a direct exchange of electrons between graphene and an adsorbate. Examples are electronegative molecules like F4-TCNQ and electropositive metals like K which lead to p- and n-type doped graphene, respectively. The cover image shows the wavefunctions of the electronic levels of a K atom on top of graphene at the Brillouin zone point marked as A and is clearly localised on the K atom while the wavefunction of the level marked as B is delocalised over the graphene layer. Such doping occurs promptly, leads to a reduction in the carrier mobility, and there should be no hysteresis effects. Furthermore, a novel doping mechanism is exhibited by Au which dopes bilayer graphene but is less effective for a single layer. A third mechanism of doping graphene, electrochemical doping, occurs by redox reactions on the graphene surface. It can result in p-doping by humid atmosphere or n-doping by NH3 and toluene. This mechanism of doping requires appreciable time to occur and can lead to an increase in the carrier mobility and hysteresis effects.

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Preface
    7. Editor's Choice
    8. Original Papers
    9. Information for authors
  4. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Preface
    7. Editor's Choice
    8. Original Papers
    9. Information for authors
  5. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Preface
    7. Editor's Choice
    8. Original Papers
    9. Information for authors
    1. Preface (pages 2013–2015)

      Version of Record online: 8 SEP 2010 | DOI: 10.1002/pssa.201021727

  6. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Preface
    7. Editor's Choice
    8. Original Papers
    9. Information for authors
    1. You have free access to this content
      Detailed study of superconductivity in nanostructured nanocrystalline boron doped diamond thin films (pages 2017–2022)

      Soumen Mandal, Cécile Naud, Oliver A. Williams, Étienne Bustarret, Franck Omnès, Pierre Rodière, Tristan Meunier, Laurent Saminadayar and Christopher Bäuerle

      Version of Record online: 16 AUG 2010 | DOI: 10.1002/pssa.201000008

  7. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Preface
    7. Editor's Choice
    8. Original Papers
    9. Information for authors
    1. Diamond growth

      Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates (pages 2023–2028)

      D. Araújo, E. Bustarret, A. Tajani, P. Achatz, M. Gutiérrez, A. J. García and M. P. Villar

      Version of Record online: 30 AUG 2010 | DOI: 10.1002/pssa.201000141

    2. Formation of {100} facet-terminated nanocrystalline diamond by microwave plasma chemical vapor deposition: Edge effect (pages 2029–2034)

      C. J. Tang, A. J. S. Fernandes, J. G. Buijnsters, I. Abe, M. F. F. Domingues and J. L. Pinto

      Version of Record online: 16 AUG 2010 | DOI: 10.1002/pssa.201000007

    3. Diamond surface modification

      Passivation of H-terminated diamond with MOCVD-aluminium nitride – a key to understand and stabilize its surface conductivity (pages 2035–2039)

      Daniel Kueck, Jochen Scharpf, Wolfgang Ebert, Mohamed Fikry, Ferdinand Scholz and Erhard Kohn

      Version of Record online: 16 AUG 2010 | DOI: 10.1002/pssa.201000072

    4. Local electrostatic charging differences of sub-100 nm nanocrystalline diamond films (pages 2040–2044)

      E. Verveniotis, J. Čermák, A. Kromka, M. Ledinský, Z. Remeš and B. Rezek

      Version of Record online: 17 AUG 2010 | DOI: 10.1002/pssa.201000014

    5. The fluorescence of variously terminated nanodiamond particles: Quantum chemical calculations (pages 2045–2048)

      I. Kratochvílová, A. Kovalenko, A. Taylor, F. Fendrych, V. Řezáčová, J. Vlček, S. Záliš, J. Šebera, P. Cígler, M. Ledvina and M. Nesládek

      Version of Record online: 17 AUG 2010 | DOI: 10.1002/pssa.201000012

    6. Defects in diamond

      Optically active point defects in high quality single crystal diamond (pages 2049–2053)

      J. P. Goss, P. R. Briddon, H. Pinto and R. Jones

      Version of Record online: 24 AUG 2010 | DOI: 10.1002/pssa.201000010

    7. Doping of single crystalline diamond with nickel (pages 2054–2057)

      M. Wolfer, H. Obloh, O. A. Williams, C.-C. Leancu, L. Kirste, E. Gheeraert and C. E. Nebel

      Version of Record online: 17 AUG 2010 | DOI: 10.1002/pssa.201000364

    8. Transport in diamond

    9. Nanocrystalline boron-doped diamond films, a mixture of BCS-like and non-BCS-like superconducting grains (pages 2064–2068)

      F. Dahlem, P. Achatz, O. A. Williams, D. Araujo, H. Courtois and E. Bustarret

      Version of Record online: 17 AUG 2010 | DOI: 10.1002/pssa.201000013

    10. Diamond electrochemistry and biosensors

      Diamond nanotextured surfaces for enhanced protein redox activity (pages 2069–2072)

      Nianjun Yang, Waldemar Smirnov, Armin Kriele, Rene Hoffmann and Christoph E. Nebel

      Version of Record online: 16 AUG 2010 | DOI: 10.1002/pssa.201000085

    11. Adsorption of cytochrome c on diamond (pages 2073–2077)

      René Hoffmann, Armin Kriele, Susanne Kopta, Waldemar Smirnov, Nianjun Yang and Christoph E. Nebel

      Version of Record online: 16 AUG 2010 | DOI: 10.1002/pssa.201000043

    12. Measurement of DNA denaturation on B-NCD coated diamond micro-cantilevers (pages 2078–2083)

      A. Bongrain, H. Uetsuka, L. Rousseau, L. Valbin, S. Saada, C. Gesset, E. Scorsone, G. Lissorgues and P. Bergonzo

      Version of Record online: 30 AUG 2010 | DOI: 10.1002/pssa.201000049

    13. Diamond devices

      Simulations of carrier confinement in boron δ-doped diamond devices (pages 2084–2087)

      Alexandre Fiori, Julien Pernot, Etienne Gheeraert and Etienne Bustarret

      Version of Record online: 17 AUG 2010 | DOI: 10.1002/pssa.201000062

    14. High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer (pages 2088–2092)

      Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, François Jomard, D. Planson, Pierre Brosselard, Nicolas Dheilly, Bertrand Vergne and Sigo Scharnholtz

      Version of Record online: 16 AUG 2010 | DOI: 10.1002/pssa.201000055

    15. Electron emission by current injection from n-type diamond film surface with negative electron affinity (pages 2093–2098)

      D. Takeuchi, T. Makino, H. Kato, I. Hirabayashi, H. Okushi and S. Yamasaki

      Version of Record online: 19 AUG 2010 | DOI: 10.1002/pssa.201000092

    16. Improvement of (001)-oriented diamond p-i-n diode by use of selective grown n+ layer (pages 2099–2104)

      Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Kazuhiro Oyama, Daisuke Takeuchi, Hideyo Okushi and Satoshi Yamasaki

      Version of Record online: 19 AUG 2010 | DOI: 10.1002/pssa.201000148

    17. Diamond Schottky-pn diode without trade-off relationship between on-resistance and blocking voltage (pages 2105–2109)

      Toshiharu Makino, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Satoshi Tanimoto, Hideyo Okushi and Satoshi Yamasaki

      Version of Record online: 16 AUG 2010 | DOI: 10.1002/pssa.201000149

    18. Boron doped nanocrystalline diamond temperature regulator for sensing applications (pages 2110–2113)

      Tim Clukers, Bart Van Grinsven, Thijs Vandenryt, Stoffel D. Janssens, Patrick Wagner, Ward De Ceuninck, Ronald Thoelen, Michaël Daenen and Ken Haenen

      Version of Record online: 16 AUG 2010 | DOI: 10.1002/pssa.201000291

    19. Diamond detectors

      Heating rate effects on the TL characteristics of hot filament CVD diamond film (pages 2114–2118)

      E. Cruz-Zaragoza, S. Gastélum, R. Quispe, R. Meléndrez, M. Pedroza-Montero and M. Barboza-Flores

      Version of Record online: 20 AUG 2010 | DOI: 10.1002/pssa.201000016

    20. Comparative study of TL created in undoped CVD diamond by β rays, UV and visible light (pages 2119–2124)

      V. Chernov, T. Piters, P. W. May, R. Meléndrez, M. Pedroza-Montero and M. Barboza-Flores

      Version of Record online: 17 AUG 2010 | DOI: 10.1002/pssa.201000018

    21. Linear–supralinear–sublinear beta-ray dose dependences of TL, OSL and afterglow in undoped CVD diamond (pages 2125–2130)

      V. Chernov, T. Piters, P. W. May, R. Meléndrez, M. Pedroza-Montero and M. Barboza-Flores

      Version of Record online: 20 AUG 2010 | DOI: 10.1002/pssa.201000021

    22. Graphene

      Mechanisms of doping graphene (pages 2131–2136)

      H. Pinto, R. Jones, J. P. Goss and P. R. Briddon

      Version of Record online: 24 AUG 2010 | DOI: 10.1002/pssa.201000009

    23. Materials preparation, manipulation, and structure

    24. Nanostructures, thin films, surfaces and interfaces

      Aqueous synthesis and characterization of nearly monodispersed ZnS nanocrystals (pages 2144–2148)

      Yashar Azizian-Kalandaragh and Ali Khodayari

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925484

    25. ZnO nanoparticles prepared by an electroexploding wire technique (pages 2153–2158)

      N. Kamal Singh, A. Alqudami and S. Annapoorni

      Version of Record online: 8 JUN 2010 | DOI: 10.1002/pssa.200925553

    26. Charge transport phenomena; superconductivity

    27. Optical properties

      Optical absorption losses in metal layers used in thin film solar cells (pages 2170–2173)

      Zdenek Remes, Jakub Holovsky, Adam Purkrt, Tibor Izak, Ales Poruba, Milan Vanecek, Ümit Dagkaldiran, Heather M. Yates, Philip Evans and David W. Sheel

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925432

    28. Effect of nanoscale confinement on fluorescence of MEH-PPV/MCM-41 composite (pages 2174–2179)

      German M. Telbiz, Oleg Yu. Posudievsky, Andrei Dementjev, Juris Kiskis, Vidmantas Gulbinas and Leonas Valkunas

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.201026151

    29. Magnetic properties; magnetic resonances

      Vacancy-mediated room-temperature ferromagnetism in Zn1−xMnxO thin films (pages 2180–2184)

      N. Gopalakrishnan, L. Balakrishnan, B. Srimathy, M. Senthil Kumar and T. Balasubramanian

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.201026038

    30. Device-related phenomena

    31. (In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width (pages 2198–2200)

      Tim Kolbe, Toni Sembdner, Arne Knauer, Viola Kueller, Hernan Rodriguez, Sven Einfeldt, Patrick Vogt, Markus Weyers and Michael Kneissl

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.201026046

    32. Low-temperature fabrication of flexible TiO2 electrode for dye-sensitized solar cells (pages 2201–2206)

      Qinghui Zeng, Yuan Yu, Liangzhuan Wu, Bin Qi and Jinfang Zhi

      Version of Record online: 7 JUN 2010 | DOI: 10.1002/pssa.200925629

  8. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Contents
    5. Recent and forthcoming publications in pss
    6. Preface
    7. Editor's Choice
    8. Original Papers
    9. Information for authors
    1. Information for authors (pages 2207–2208)

      Version of Record online: 8 SEP 2010 | DOI: 10.1002/pssa.201021728

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