physica status solidi (a)

Cover image for Vol. 208 Issue 4

April 2011

Volume 208, Issue 4

Pages 741–963

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Front Cover: Nanocoax solar cells based on aligned multiwalled carbon nanotube arrays (Phys. Status Solidi A 4/2011)

      T. Paudel, J. Rybczynski, Y. T. Gao, Y. C. Lan, Y. Peng, K. Kempa, M. J. Naughton and Z. F. Ren

      Article first published online: 11 APR 2011 | DOI: 10.1002/pssa.201190011

      Thumbnail image of graphical abstract

      Paudel et al. (pp. 924–927) fabricated and studied solar cells based on the distributed nanocoax architecture by depositing amorphous silicon (a-Si) as photovoltaic medium on the arrays of aligned multi-wall carbon nanotubes (MWCNTs). These inexpensive cells demonstrate an initial efficiency of 6.1% that can be further enhanced by increasing the nanocoax density per unit area and improving the amorphous silicon quality. The cover image shows a false-color photograph of a nanocoax cell (size of a single coax is ca. 1 µm) and the curves of a I–V plot demonstrating the efficiency of a solar cell fabricated by employing these CNTs compared to a planar cell. In the sketch, the CNTs are shown in light grey, a-Si in red, and indium tin oxide in yellow.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Inside Back Cover: Effects of polarization charge on the photovoltaic properties of InGaN solar cells (Phys. Status Solidi A 4/2011)

      Z. Q. Li, M. Lestradet, Y. G. Xiao and S. Li

      Article first published online: 11 APR 2011 | DOI: 10.1002/pssa.201190012

      Thumbnail image of graphical abstract

      The effects of interface polarization charge on the photovoltaic characteristics of GaN/InGaN solar cells have been analyzed by Z.Q. Li et al. (pp. 928–931) using 2D drift–diffusion simulations. InGaN material could be potentially used for high efficient solar cells thanks to its wide band-gap range, high absorption coefficient and radiation hardness. However, it is well-known that spontaneous polarization and strain-induced piezoelectric polarization effect lead to significant interface charges in nitride-based devices grown on c-plane. For common Ga-polar (0001) InGaN solar cells, the polarization charge at the GaN/InGaN interface creates an electric field that forces photo carriers to drift in opposite directions needed for efficient collection and substantially reduces the short circuit current (Isc) and open circuit voltage (Voc). Using N-polar (000equation image) InGaN materials, on the other hand, the polarization charges reverse signs and the subsequent electric field helps to sweep the photo carriers to proper contacts.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Back Cover: Kelvin probe force microscopy in the presence of intrinsic local electric fields (Phys. Status Solidi A 4/2011)

      Christine Baumgart, Anne-Dorothea Müller, Falk Müller and Heidemarie Schmidt

      Article first published online: 11 APR 2011 | DOI: 10.1002/pssa.201190013

      Thumbnail image of graphical abstract

      Kelvin probe force microscopy (KPFM) measurements are based on the injection of majority charge carriers into the sample surface region. Thus, in semiconductors the measured KPFM bias is related to the energy difference between Fermi energy and respective band gap. This relation makes KPFM the best choice when aiming at quantitative dopant profiling. In the Editor's Choice article by Baumgart et al. (pp. 777–789) the influence of the chosen electrical KPFM operation frequency is discussed. It is shown how drift and diffusion of injected charge carriers may influence the detected electrical signal in semiconducting samples with horizontal p–n junctions. KPFM measurements below the operation frequency where drift and diffusion play a role, may be used to investigate the diffusion velocity of charge carriers in doped semiconductor nanostructures with internal electric fields. In general, it is of utmost importance to investigate the sample-specific dependence on local intrinsic electric fields before attempting quantitative KPFM measurements.

  4. Issue Information

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Issue Information

      Article first published online: 11 APR 2011 | DOI: 10.1002/pssa.201190014

  5. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Contents: (Phys. Status Solidi A 4/2011) (pages 741–746)

      Article first published online: 11 APR 2011 | DOI: 10.1002/pssa.201121811

  6. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Recent and forthcoming publications in pss (page 747)

      Article first published online: 11 APR 2011 | DOI: 10.1002/pssa.201121812

  7. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Beam Injection Assessment of Microstructures

      Application of the electron probe microanalysis in nitride-based heterostructures investigation (pages 749–753)

      Yana Kuznetsova, Marina Baidakova, Ekaterina Flegontova, Anton Kuznetsov, Alla Sitnikova and Maria Zamoryanskaya

      Article first published online: 26 JAN 2011 | DOI: 10.1002/pssa.201084015

    2. Photoluminescence study of Ge containing crystal defects (pages 754–759)

      Martin Kittler, Tzanimir Arguirov, Michael Oehme, Yuji Yamamoto, Bernd Tillack and Nikolai V. Abrosimov

      Article first published online: 7 FEB 2011 | DOI: 10.1002/pssa.201084010

    3. Recombination in ingot cast silicon solar cells (pages 760–768)

      Markus Rinio, Arthit Yodyungyong, Sinje Keipert-Colberg, Dietmar Borchert and Amada Montesdeoca-Santana

      Article first published online: 31 JAN 2011 | DOI: 10.1002/pssa.201084022

      Corrected by:

      Erratum: Recombination in ingot cast silicon solar cells [Phys. Status Solidi A 208, No. 4, 760–768 (2011)]

      Vol. 208, Issue 5, 1208, Article first published online: 12 MAY 2011

  8. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Kelvin probe force microscopy in the presence of intrinsic local electric fields (pages 777–789)

      Christine Baumgart, Anne-Dorothea Müller, Falk Müller and Heidemarie Schmidt

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssa.201026251

  9. Frontispiece

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Frontispiece: Narrow sintering temperature window for (K, Na)NbO3-based lead-free piezoceramics caused by compositional segregation (Phys. Status Solidi A 4/2011)

      Jian Fang, Xiaohui Wang, Ruzhong Zuo, Zhibin Tian, Caifu Zhong and Longtu Li

      Article first published online: 11 APR 2011 | DOI: 10.1002/pssa.201121813

      Thumbnail image of graphical abstract

      Compositional segregation in sintered alkaline niobate-based ceramics Compositional segregation is a phenomenon taking place in alkaline niobate-based ceramics sintered above their melting points. The selected area diffraction (SAD) patterns suggest a clear segregation of liquid phase and solid phase. Energy-dispersive spectroscopy analysis across a grain along a line shows that the grain is partially melting and undergoes a compositional segregation, exhibiting a ‘core-shell’ like structure. For more details see the article by J. Fang et al. (pp. 791–794). The results indicate that compositional segregation is also a factor causing the high-temperature instability of alkaline niobate-based piezoceramics, yielding the observed narrow sintering temperature window. The suppression of compositional segregation could be an effective solution to the problem of poor performance repeatability, and a great help to the fabrication of high-performance alkaline niobate-based ceramics.

  10. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Materials preparation, manipulation, and structure

      Narrow sintering temperature window for (K, Na)NbO3-based lead-free piezoceramics caused by compositional segregation (pages 791–794)

      Jian Fang, Xiaohui Wang, Ruzhong Zuo, Zhibin Tian, Caifu Zhong and Longtu Li

      Article first published online: 10 JAN 2011 | DOI: 10.1002/pssa.201026500

    2. Structure characterization of spark plasma sintered alumina by positron annihilation lifetime spectroscopy (pages 795–802)

      Nikolay Djourelov, Yann Aman, Kalin Berovski, Patrick Nédélec, Nicolas Charvin, Vincent Garnier and Elisabeth Djurado

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssa.201026474

    3. Raman spectroscopy of bio-SiC ceramics (pages 808–813)

      V. O. Yukhymchuk, V. S. Kiselov, A. E. Belyaev, M. Ya. Valakh, M. V. Chursanova, M. Danailov and S. A. Vitusevich

      Article first published online: 31 JAN 2011 | DOI: 10.1002/pssa.201026618

    4. Kinetics of dynamic recrystallization in cobalt: A study using the Avrami relation (pages 814–818)

      A. Sarkar, J. K. Chakravartty, B. Paul and A. K. Suri

      Article first published online: 4 FEB 2011 | DOI: 10.1002/pssa.201127001

    5. SR phase contrast imaging to address the evolution of defects during SiC growth (pages 819–824)

      Tatiana S. Argunova, Mikhail Yu. Gutkin, Jung Ho Je, Evgeniy N. Mokhov, Sergey S. Nagalyuk and Yeukuang Hwu

      Article first published online: 10 JAN 2011 | DOI: 10.1002/pssa.201026341

    6. Nanostructures, thin films, surfaces and interfaces

      Influence of Sb doping on optical and structural properties of ZnO by MOCVD (pages 825–828)

      Jianze Zhao, Hongwei Liang, Jingchang Sun, Qiuju Feng, Shuoshi Li, Jiming Bian, Lizhong Hu, Guotong Du, Jingjian Ren and Jianlin Liu

      Article first published online: 7 JAN 2011 | DOI: 10.1002/pssa.201026659

    7. Oxygen annealing for deuterium-doped indium tin oxide thin films (pages 829–833)

      Koichi Okada, Shigemi Kohiki, Suning Luo, Atsushi Kohno, Takayuki Tajiri, Satoshi Ishii, Daiichiro Sekiba, Masanori Mitome and Fumiya Shoji

      Article first published online: 10 JAN 2011 | DOI: 10.1002/pssa.201026493

    8. Coherent growth of r-plane GaN films on ZnO substrates at room temperature (pages 834–837)

      Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta and Hiroshi Fujioka

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssa.201026397

    9. Growth temperature altered morphology of Ge nanocolumns (pages 851–856)

      Chinmay Khare, Jürgen W. Gerlach, Michael Weise, Jens Bauer, Thomas Höche and Bernd Rauschenbach

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssa.201026545

    10. Synthesis and characterization of Fe-doped LiNbO3 nanocrystals from a triple-alkoxide method (pages 857–862)

      Bastian Knabe, Daniel Schütze, Tobias Jungk, Matthias Svete, Wilfried Assenmacher, Werner Mader and Karsten Buse

      Article first published online: 20 JAN 2011 | DOI: 10.1002/pssa.201026546

    11. Synthesis, structural, and optical properties of core/shell ZnS:Fe/ZnS nanocrystals (pages 863–867)

      Lingyun Liu, Ruishi Xie, Lin Yang, Dingquan Xiao and Jianguo Zhu

      Article first published online: 2 FEB 2011 | DOI: 10.1002/pssa.201026698

    12. Reproducible resistive-switching behavior in copper-nitride thin film prepared by plasma-immersion ion implantation (pages 874–877)

      Qian Lu, Xin Zhang, Wei Zhu, Yongning Zhou, Qianfei Zhou, Lilong Liu and Xiaojing Wu

      Article first published online: 14 FEB 2011 | DOI: 10.1002/pssa.201026680

    13. Charge transport phenomena; superconductivity

      Fluctuation-induced conductivity of melt-textured Y0.95Er0.05Ba2Cu3O7−δ superconductor prepared in air (pages 882–887)

      Lincoln Brum de Leite Gusmão Pinheiro, Rosângela Menegotto Costa, Pedro Rodrigues Júnior, Gerson Kniphoff da Cruz and Alcione Roberto Jurelo

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssa.201026693

    14. Optical properties

      Rapid dislocation-related D1-photoluminescence imaging of multicrystalline Si wafers at room temperature (pages 888–892)

      R. P. Schmid, D. Mankovics, T. Arguirov, M. Ratzke, T. Mchedlidze and M. Kittler

      Article first published online: 20 JAN 2011 | DOI: 10.1002/pssa.201026269

    15. Photoluminescence of samples produced by electroless wet chemical etching: Between silicon nanowires and porous structures (pages 893–899)

      Felix Voigt, Vladimir Sivakov, Viktor Gerliz, Gottfried H. Bauer, Björn Hoffmann, Gyorgy Z. Radnoczi, Bela Pecz and Silke Christiansen

      Article first published online: 15 FEB 2011 | DOI: 10.1002/pssa.201026520

    16. Magnetic properties; magnetic resonances

    17. Dielectric and ferroelectric properties

      Piezoelectric properties and thermal stability of (Na0.53K0.47−xAgx)Nb1−xSbxO3 ceramics (pages 915–918)

      Limei Zheng, Jinfeng Wang, Qingzao Wu, Rui Zhang, Chunming Wang and Zhigang Gai

      Article first published online: 7 JAN 2011 | DOI: 10.1002/pssa.201026444

    18. Effective control of polarity in Bi0.9La0.1FeO3 thin films by dopant-related internal bias (pages 919–923)

      Yang Wang, Weigang Chen, Zuhuang Chen, Naidu Chukka Rami, Junling Wang, John Wang and Lang Chen

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssa.201026628

    19. Device-related phenomena

      Nanocoax solar cells based on aligned multiwalled carbon nanotube arrays (pages 924–927)

      T. Paudel, J. Rybczynski, Y. T. Gao, Y. C. Lan, Y. Peng, K. Kempa, M. J. Naughton and Z. F. Ren

      Article first published online: 11 FEB 2011 | DOI: 10.1002/pssa.201026781

    20. Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers (pages 937–942)

      Kazuhiro Oyama, Sung-Gi Ri, Hiromitsu Kato, Daisuke Takeuchi, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Hideyo Okushi and Satoshi Yamasaki

      Article first published online: 7 JAN 2011 | DOI: 10.1002/pssa.201026490

    21. Solution-processed semitransparent p–n graphene oxide:CNT/ZnO heterojunction diodes for visible-blind UV sensors (pages 943–946)

      Tran Viet Cuong, Huynh Ngoc Tien, Van Hoang Luan, Viet Hung Pham, Jin Suk Chung, Dae Hwang Yoo, Sung Hong Hahn, Kee-Kahb Koo, Paul A. Kohl, Seung Hyun Hur and Eui Jung Kim

      Article first published online: 10 JAN 2011 | DOI: 10.1002/pssa.201026553

    22. Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities (pages 947–950)

      Sameer Chhajed, Jaehee Cho, E. Fred Schubert, Jong Kyu Kim, Daniel D. Koleske and Mary H. Crawford

      Article first published online: 10 JAN 2011 | DOI: 10.1002/pssa.201026668

  11. Information for authors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Frontispiece
    11. Original Papers
    12. Information for authors
    1. Information for authors (pages 962–963)

      Article first published online: 11 APR 2011 | DOI: 10.1002/pssa.201121814

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