physica status solidi (a)

Cover image for Vol. 208 Issue 5

May 2011

Volume 208, Issue 5

Pages 965–1208

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
    1. Front Cover: Ferroelectric and piezoelectric properties of Aurivillius phase intergrowth ferroelectrics and the underlying materials design (Phys. Status Solidi A 5/2011)

      Z. G. Yi, Y. X. Li and Y. Liu

      Article first published online: 12 MAY 2011 | DOI: 10.1002/pssa.201190015

      Thumbnail image of graphical abstract

      Developing novel lead-free ferroelectrics is still a challenging task. In their article on pp. 1035–1040, Z.G. Yi et al. from the Shanghai Institute of Ceramics, China, and Australian National University, Canberra, show a two-step materials design strategy: (1) fabricating intergrowth ferroelectric structures, followed by (2) Bi-site engineering. The interesting ferroelectricity thus obtained is also discussed. The ferroelectric and piezoelectric properties of La-doped Bi5TiNbO15 and Bi7Ti4NbO21 ceramics are studied in detail.

      This article forms part of the Special Section “Advances in Electronic Materials and Devices in the Far East”, guest edited by Giuseppe Pezzotti (see also the Preface on pp. 971–974).

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
    1. Back Cover: Interdependency of surface morphology and wavelength fluctuations of indium-rich InGaN/GaN quantum wells (Phys. Status Solidi A 5/2011)

      Teresa Lermer, Ines Pietzonka, Adrian Avramescu, Georg Brüderl, Jens Müller, Stephan Lutgen and Uwe Strauss

      Article first published online: 12 MAY 2011 | DOI: 10.1002/pssa.201190016

      Thumbnail image of graphical abstract

      The origin of indium fluctuations in indium-rich quantum wells is of high interest for direct green laser diodes. Teresa Lermer and co-authors (pp. 1199–1202) present the correlation of morphological features such as macro steps investigated by atomic force microscopy measurements and wavelength fluctuations seen in cathodoluminescence (CL) images of InGaN/GaN quantum wells (QW) grown by metal organic vapour phase epitaxy. The cover images show the low-temperature CL intensity plot (top left) and corresponding CL wavelength plot (top right) of the “green QW” test structure. On the bottom, a color coded intensity scan along the above yellow line is shown together with a sketch of the corresponding morphology and the different wavelength regimes. In their article, the authors present a growth model taking adsorption, desorption and migration processes into account to explain the difference of ultraviolet and green InGaN QW samples via a temperature dependent change in indium incorporation in the vicinity of the observed macro step edges.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
    1. Issue Information

      Article first published online: 12 MAY 2011 | DOI: 10.1002/pssa.201190017

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
    1. Contents: (Phys. Status Solidi 5 4/2011) (pages 965–969)

      Article first published online: 12 MAY 2011 | DOI: 10.1002/pssa.201121815

  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
    1. Recent and forthcoming publications in pss (page 970)

      Article first published online: 12 MAY 2011 | DOI: 10.1002/pssa.201121816

  6. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
  7. Frontispiece

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
    1. Frontispiece: Spatially resolved Raman and cathodoluminescence probes in electronic materials: Basics and applications (Phys. Status Solidi A 5/2011)

      Giuseppe Pezzotti

      Article first published online: 12 MAY 2011 | DOI: 10.1002/pssa.201121818

      Thumbnail image of graphical abstract

      Spatially resolved Raman and CL probes in electronic materials Spatially resolved spectroscopy of both Raman and cathodoluminescence (CL) emissions represents a quite powerful characterization method in electronics. In the Tutorial by Giuseppe Pezzotti (pp. 976–999), the underlying physics that dictates the different characteristics of Raman and CL probes is revisited, deepened and further interpreted in order to clarify how the different nature of those probes enables one bringing about different sets of complementary information. The images refer to the analysis of domain structure in barium titanate. On the left, a low magnification CL image of the domain texture is shown. In the center, domain orientation analyses are presented which were performed in the same area of the sample by polarized Raman (top) and CL (bottom) spectroscopy at the limit of their respective spatial resolutions (cf. also the sketches of experimental setup on the right).

  8. Tutorials

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
    1. Advances in Electronic Materials and Devices in the Far East

    2. Nanometer-scale cathodoluminescence analysis of GaAs and its application to the assessment of laser diode (pages 1000–1011)

      Teppei Hosokawa, Shinya Fujimura, Yasufumi Yabuuchi, Yoshiaki Tsukamoto, Alessandro Alan Porporati, Wenliang Zhu and Giuseppe Pezzotti

      Article first published online: 22 MAR 2011 | DOI: 10.1002/pssa.201000358

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
    1. Materials

    2. The structural and optical properties of Volmer–Weber-type ZnO nanorods (pages 1021–1026)

      Se-Jeong Park, Weizhen He, Jijun Qiu, Jin Woo Kim, Ik Jae Lee, Beomkeun Kim, Hyung-Kook Kim and Yoon-Hwae Hwang

      Article first published online: 17 MAR 2011 | DOI: 10.1002/pssa.201000054

    3. Contribution of Pt layer to hydrogen mediation in ZnCoO (pages 1027–1030)

      Jong Moon Shin, Yong Chan Cho, Su-Young Cha, Seunghun Lee, Sung-Jin Kim, Sung-Kyu Kim, Sungkyun Park, Chae Ryong Cho and Se-Young Jeong

      Article first published online: 10 MAR 2011 | DOI: 10.1002/pssa.201000070

    4. Synthesis and physical properties of solar material Cu1+xIn1-xSe2 (pages 1031–1034)

      Shiyou Zheng, Yaoming Wang and Fuqiang Huang

      Article first published online: 10 MAR 2011 | DOI: 10.1002/pssa.201000074

    5. Electrical properties of (Na,Ce) doped Bi5Ti3FeO15 ceramics (pages 1047–1051)

      Zhen Huang, Gen-Shui Wang, Yu-Chen Li, Rui-Hong Liang, Fei Cao and Xian-Lin Dong

      Article first published online: 23 MAR 2011 | DOI: 10.1002/pssa.201000080

    6. Devices

      Pyroelectric performances of relaxor-based ferroelectric single crystals and related infrared detectors (pages 1061–1067)

      Xiangyong Zhao, Xiao Wu, Linhua Liu, Haosu Luo, Norbert Neumann and Ping Yu

      Article first published online: 14 MAR 2011 | DOI: 10.1002/pssa.201000051

    7. LiNbO3 thin film for A1 mode of Lamb wave resonators (pages 1068–1071)

      Michio Kadota, Takashi Ogami, Kansho Yamamoto and Hikari Tochishita

      Article first published online: 11 MAR 2011 | DOI: 10.1002/pssa.201000060

    8. Characterization

    9. Impedance spectroscopy analysis for high-Tc BaTiO3-(Bi1/2Na1/2)TiO3 lead-free PTCR ceramics (pages 1099–1104)

      Senlin Leng, Liaoying Zheng, Guorong Li, Jiangtao Zeng, Qingrui Yin, Zhijun Xu and Ruiqing Chu

      Article first published online: 16 MAR 2011 | DOI: 10.1002/pssa.201000061

    10. Nanoscale piezoresponse, acoustic and thermal microscopy of electronic ceramics (pages 1111–1118)

      Xue Leng, Huarong Zeng, Liming Liu, Kunyu Zhao, Jiangtao Zeng, Guorong Li and Qingrui Yin

      Article first published online: 11 MAR 2011 | DOI: 10.1002/pssa.201000075

    11. Dielectric and pyroelectric properties of poled Ba0.6Sr0.3Ca0.1TiO3 ceramics (pages 1127–1131)

      Sheng Cao, Chaoliang Mao, Chunhua Yao, Wei Liu, Kui Li, Fei Cao, Xianlin Dong and Genshui Wang

      Article first published online: 16 MAR 2011 | DOI: 10.1002/pssa.201000081

    12. Theory

    13. Growth of Group III Nitrides

    14. Free electron properties and hydrogen in InN grown by MOVPE (pages 1179–1182)

      V. Darakchieva, M.-Y. Xie, D. Rogalla, H.-W. Becker, K. Lorenz, E. Alves, S. Ruffenach, M. Moret and O. Briot

      Article first published online: 15 FEB 2011 | DOI: 10.1002/pssa.201001151

    15. MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate (pages 1183–1186)

      Matthieu Moret, Sandra Ruffenach, Olivier Briot and Bernard Gil

      Article first published online: 16 FEB 2011 | DOI: 10.1002/pssa.201001192

    16. Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method (pages 1191–1194)

      Yasuhiro Isobe, Daisuke Iida, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Mamoru Imade, Yasuo Kitaoka and Yusuke Mori

      Article first published online: 18 MAR 2011 | DOI: 10.1002/pssa.201001019

    17. A novel substrate LaBGeO5 lattice-matched to InN (pages 1195–1198)

      Shintaro Miyazawa, Satoru Ichikawa, Yuhuai Liu, Shiyang Ji, Takashi Matsuoka and Hideo Nakae

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssa.201000909

    18. Interdependency of surface morphology and wavelength fluctuations of indium-rich InGaN/GaN quantum wells (pages 1199–1202)

      Teresa Lermer, Ines Pietzonka, Adrian Avramescu, Georg Brüderl, Jens Müller, Stephan Lutgen and Uwe Strauss

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssa.201000695

  10. Erratum

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Preface
    8. Frontispiece
    9. Tutorials
    10. Original Papers
    11. Erratum
    1. You have free access to this content
      Light emission from different ZnO junctions and nanostructures [Phys. Status Solidi A 206, No. 5, 853–859 (2009)] (page 1207)

      M. Willander, Yu. E. Lozovik, A. Wadeasa, O. Nur, A. G. Semenov and N. S. Voronova

      Article first published online: 12 MAY 2011 | DOI: 10.1002/pssa.201183671

      This article corrects:

      Light emission from different ZnO junctions and nanostructures

      Vol. 206, Issue 5, 853–859, Article first published online: 21 APR 2009

    2. You have free access to this content
      Recombination in ingot cast silicon solar cells [Phys. Status Solidi A 208, No. 4, 760–768 (2011)] (page 1208)

      Markus Rinio, Arthit Yodyunyong, Sinje Keipert-Colberg, Dietmar Borchert and Amada Montesdeoca-Santana

      Article first published online: 12 MAY 2011 | DOI: 10.1002/pssa.201183672

      This article corrects:

      Recombination in ingot cast silicon solar cells

      Vol. 208, Issue 4, 760–768, Article first published online: 31 JAN 2011

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