physica status solidi (a)

Cover image for Vol. 209 Issue 1

January 2012

Volume 209, Issue 1

Pages 1–227

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. You have full text access to this OnlineOpen article
      Front Cover: Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition (Phys. Status Solidi A 1/2012)

      Min Hwa Kim, Dae Young Moon, Jinsub Park, Yasushi Nanishi, Gyu-Chul Yi and Euijoon Yoon

      Version of Record online: 19 DEC 2011 | DOI: 10.1002/pssa.201190045

      Thumbnail image of graphical abstract

      Min Hwa Kim et al. (pp. 50–55) report on the growth mechanism of catalyst-free indium nitride nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. The cover picture shows atomic force microscopy (AFM) 3D images of an indium nitride nanostructure at initial stage. The pit formation on the c-plane surface of islands already started even within one minute of growth. The pit formation at this initial stage is thought to be related with thermal desorption at energetically unstable regions like crystalline defects in nuclei of InN. As growth time increased, small pits got bigger and at the same time islands were coalesced. Finally, InN nanorods were formed.

    2. You have free access to this content
      Front Cover: Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition (Phys. Status Solidi A 1/2012)

      Min Hwa Kim, Dae Young Moon, Jinsub Park, Yasushi Nanishi, Gyu-Chul Yi and Euijoon Yoon

      Version of Record online: 15 DEC 2011 | DOI: 10.1002/pssa.201190042

      Thumbnail image of graphical abstract

      Min Hwa Kim et al. (pp. 50–55) report on the growth mechanism of catalyst-free indium nitride nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. The cover picture shows atomic force microscopy (AFM) 3D images of an indium nitride nanostructure at initial stage. The pit formation on the c-plane surface of islands already started even within one minute of growth. The pit formation at this initial stage is thought to be related with thermal desorption at energetically unstable regions like crystalline defects in nuclei of InN. As growth time increased, small pits got bigger and at the same time islands were coalesced. Finally, InN nanorods were formed.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Back Cover: Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy (Phys. Status Solidi A 1/2012)

      Anja Eisenhardt, Marcel Himmerlich and Stefan Krischok

      Version of Record online: 15 DEC 2011 | DOI: 10.1002/pssa.201190043

      Thumbnail image of graphical abstract

      Eisenhardt et al. (pp. 45–49) characterized the impact of molecular treatment on the surface electronic properties of as-grown N-polar InN using in situ photoelectron spectroscopy (XPS and UPS). The results show that the surface band bending characteristic of as-grown N-polar InN clearly differs from In-polar InN — manifested in lower core level (CL) binding energies. This implies a reduced surface downward band bending for as-grown N-polar InN. Storage in ambient conditions compensates this difference. Hence, the question is raised in which way specific molecular species like oxygen or hydrocarbon molecules interact with the InN surface. The cover picture shows XPS-CL spectra (O 1s and N 1s) of the N-polar InN surface after epitaxial growth and after exposure to molecular oxygen, respectively. They verify the adsorption of the oxygen at the InN(000-1) surface, and illustrate that oxygen interaction induces a rather small variation of the InN(000-1) surface band alignment.

    2. You have full text access to this OnlineOpen article
      Back Cover: Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy (Phys. Status Solidi A 1/2012)

      Anja Eisenhardt, Marcel Himmerlich and Stefan Krischok

      Version of Record online: 19 DEC 2011 | DOI: 10.1002/pssa.201190046

      Thumbnail image of graphical abstract

      Eisenhardt et al. (pp. 45–49) characterized the impact of molecular treatment on the surface electronic properties of as-grown N-polar InN using in situ photoelectron spectroscopy (XPS and UPS). The results show that the surface band bending characteristic of as-grown N-polar InN clearly differs from In-polar InN — manifested in lower core level (CL) binding energies. This implies a reduced surface downward band bending for as-grown N-polar InN. Storage in ambient conditions compensates this difference. Hence, the question is raised in which way specific molecular species like oxygen or hydrocarbon molecules interact with the InN surface. The cover picture shows XPS-CL spectra (O 1s and N 1s) of the N-polar InN surface after epitaxial growth and after exposure to molecular oxygen, respectively. They verify the adsorption of the oxygen at the InN(000-1) surface, and illustrate that oxygen interaction induces a rather small variation of the InN(000-1) surface band alignment.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Issue Information

      Version of Record online: 15 DEC 2011 | DOI: 10.1002/pssa.201190044

  4. Editorials

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
    2. You have free access to this content
  5. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Contents: (Phys. Status Solidi 1/2012) (pages 5–10)

      Version of Record online: 15 DEC 2011 | DOI: 10.1002/pssa.201221903

  6. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Recent and forthcoming publications in pss (page 11)

      Version of Record online: 15 DEC 2011 | DOI: 10.1002/pssa.201221904

  7. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. Materials, characterization and devices

      High-efficiency InGaN/GaN quantum well structures on large area silicon substrates (pages 13–16)

      D. Zhu, C. McAleese, M. Häberlen, M. J. Kappers, N. Hylton, P. Dawson, G. Radtke, M. Couillard, G. A. Botton, S.-L. Sahonta and C. J. Humphreys

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssa.201100129

    2. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells (pages 17–20)

      Sirona Valdueza-Felip, Lorenzo Rigutti, Fernando B. Naranjo, Bertrand Lacroix, Susana Fernández, Pierre Ruterana, François H. Julien, Miguel González-Herráez and Eva Monroy

      Version of Record online: 16 NOV 2011 | DOI: 10.1002/pssa.201100188

    3. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures (pages 21–24)

      Piero Gamarra, Cedric Lacam, Michelle Magis, Maurice Tordjman and Marie-Antoinette di Forte Poisson

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssa.201100090

    4. Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials (pages 25–28)

      K. Pantzas, G. Patriarche, G. Orsal, S. Gautier, T. Moudakir, M. Abid, V. Gorge, Z. Djebbour, P. L. Voss and A. Ougazzaden

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssa.201100154

    5. Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate (pages 29–32)

      E. Sakalauskas, M. Wieneke, A. Dadgar, G. Gobsch, A. Krost and R. Goldhahn

      Version of Record online: 16 NOV 2011 | DOI: 10.1002/pssa.201100066

    6. Growth, microstructure and morphology of epitaxial ScGaN films (pages 33–40)

      S. M. Knoll, S. Zhang, T. B. Joyce, M. J. Kappers, C. J. Humphreys and M. A. Moram

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssa.201100158

    7. InN grown by migration enhanced afterglow (MEAglow) (pages 41–44)

      Kenneth Scott A. Butcher, Dimiter Alexandrov, Penka Terziyska, Vasil Georgiev, Dimka Georgieva and Peter W. Binsted

      Version of Record online: 21 NOV 2011 | DOI: 10.1002/pssa.201100102

    8. Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition (pages 50–55)

      Min Hwa Kim, Dae Young Moon, Jinsub Park, Yasushi Nanishi, Gyu-Chul Yi and Euijoon Yoon

      Version of Record online: 1 DEC 2011 | DOI: 10.1002/pssa.201100124

    9. Electron and hole scattering dynamics in InN films investigated by infrared measurements (pages 56–64)

      Yoshihiro Ishitani, Masayuki Fujiwara, Daichi Imai, Kazuhide Kusakabe and Akihiko Yoshikawa

      Version of Record online: 15 NOV 2011 | DOI: 10.1002/pssa.201100152

    10. Theory

    11. Simple models for InGaN alloys (pages 79–82)

      Fathi Elfituri and Ben Hourahine

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/pssa.201100147

    12. Impurities and transport

      Taming transport in InN (pages 83–86)

      Joel W. Ager III and Nate R. Miller

      Version of Record online: 16 NOV 2011 | DOI: 10.1002/pssa.201100069

    13. Point defect evolution in low-temperature MOCVD growth of InN (pages 87–90)

      Christian Rauch, Öcal Tuna, Christoph Giesen, Michael Heuken and Filip Tuomisto

      Version of Record online: 16 NOV 2011 | DOI: 10.1002/pssa.201100083

    14. Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN (pages 91–94)

      V. Darakchieva, K. Lorenz, M.-Y. Xie, E. Alves, W. J. Schaff, T. Yamaguchi, Y. Nanishi, S. Ruffenach, M. Moret and O. Briot

      Version of Record online: 28 NOV 2011 | DOI: 10.1002/pssa.201100175

  8. Frontispiece

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Frontispiece: High optical quality multicarat single crystal diamond produced by chemical vapor deposition (Phys. Status Solidi 1/2012) (page 100)

      Yu-fei Meng, Chih-shiue Yan, Szczesny Krasnicki, Qi Liang, Joseph Lai, Haiyun Shu, Thomas Yu, Andrew Steele, Ho-kwang Mao and Russell J. Hemley

      Version of Record online: 15 DEC 2011 | DOI: 10.1002/pssa.201221905

      Thumbnail image of graphical abstract

      Finding ways to routinely and reliably produce larger near-colorless and colorless single-crystal diamond needed for a variety of applications in science and technology is a major challenge. Meng et al. (pp. 101–104) have refined microwave plasma assisted chemical vapor deposition (MPCVD) techniques to produce large, high-purity single crystal diamond anvils. Specifically multicarat single crystal diamond has been produced at high growth rate without annealing (around 50 μm/h) with low impurities content. The example shown in the image is a 2.4 carat colorless CVD diamond anvil which was cut from a crystal 13.5 carat block. UV—visible absorption, Raman/photoluminesence spectroscopy, cathodolunminesence, and confocal Raman imaging are used to characterize the diamond. The measurements show that the material has high optical quality and clarity without layers. The large intensity ratio of the second-order Raman peak to the fluorescence background is essential for high-pressure optical windows. The origin of the residual color is also examined.

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. Materials preparation, manipulation, and structure

      High optical quality multicarat single crystal diamond produced by chemical vapor deposition (pages 101–104)

      Yu-fei Meng, Chih-shiue Yan, Szczesny Krasnicki, Qi Liang, Joseph Lai, Haiyun Shu, Thomas Yu, Andrew Steele, Ho-kwang Mao and Russell J. Hemley

      Version of Record online: 5 OCT 2011 | DOI: 10.1002/pssa.201127417

    2. Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope (pages 113–117)

      Iñaki López, Emilio Nogales, Pedro Hidalgo, Bianchi Méndez and Javier Piqueras

      Version of Record online: 14 OCT 2011 | DOI: 10.1002/pssa.201127406

    3. Three-step growth method for high quality AlN epilayers (pages 126–129)

      M. L. Nakarmi, B. Cai, J. Y. Lin and H. X. Jiang

      Version of Record online: 21 OCT 2011 | DOI: 10.1002/pssa.201127475

    4. Nanostructures, thin films, surfaces and interfaces

    5. Electron-beam induced phase transformation in β-Ag2Se thin films (pages 135–138)

      Kuibo Yin, Yidong Xia, Zhiguo Liu, Jiang Yin and Litao Sun

      Version of Record online: 7 SEP 2011 | DOI: 10.1002/pssa.201026549

    6. Morphological, optical, and Raman characteristics of ZnO nanoflakes prepared via a sol–gel method (pages 143–147)

      M. Kashif, Syed M. Usman Ali, M. E. Ali, H. I. Abdulgafour, U. Hashim, M. Willander and Z. Hassan

      Version of Record online: 22 SEP 2011 | DOI: 10.1002/pssa.201127357

    7. Structure and optical properties of silicon layers with GaSb nanocrystals created by ion-beam synthesis (pages 148–152)

      F. Komarov, L. Vlasukova, O. Milchanin, A. Mudryi, B. Dunets, W. Wesch and E. Wendler

      Version of Record online: 14 OCT 2011 | DOI: 10.1002/pssa.201127060

    8. Charge transport phenomena; superconductivity

      Thermoelectric properties and microstructures of AgSbTe2-added p-type Pb0.16Ge0.84Te (pages 167–170)

      Aikebaier Yusufu, Ken Kurosaki, Tohru Sugahara, Yuji Ohishi, Hiroaki Muta and Shinsuke Yamanaka

      Version of Record online: 5 OCT 2011 | DOI: 10.1002/pssa.201127194

    9. Assessment on thermoelectric power factor in silicon nanowire networks (pages 171–175)

      Andrew J. Lohn, Elane Coleman, Gary S. Tompa and Nobuhiko P. Kobayashi

      Version of Record online: 21 OCT 2011 | DOI: 10.1002/pssa.201127388

    10. Optical properties

      Urbach tail and bandgap analysis in near stoichiometric LiNbO3 crystals (pages 176–180)

      R. Bhatt, I. Bhaumik, S. Ganesamoorthy, A. K. Karnal, M. K. Swami, H. S. Patel and P. K. Gupta

      Version of Record online: 12 SEP 2011 | DOI: 10.1002/pssa.201127361

    11. Device-related phenomena

      Mechanism of surface proton transfer doping in pentacene based organic thin-film transistors (pages 181–192)

      Simon J. Ausserlechner, Manfred Gruber, Reinhold Hetzel, Heinz-Georg Flesch, Lukas Ladinig, Lucas Hauser, Anja Haase, Michael Buchner, Roland Resel, Ferdinand Schürrer, Barbara Stadlober, Gregor Trimmel, Karin Zojer and Egbert Zojer

      Version of Record online: 15 NOV 2011 | DOI: 10.1002/pssa.201127595

    12. GaN-based p–i–n X-ray detection (pages 204–206)

      Changsheng Yao, Kai Fu, Guo Wang, Guohao Yu and Min Lu

      Version of Record online: 28 SEP 2011 | DOI: 10.1002/pssa.201127446

    13. AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy (pages 216–220)

      Ajay Raman, Christophe A. Hurni, James S. Speck and Umesh K. Mishra

      Version of Record online: 27 SEP 2011 | DOI: 10.1002/pssa.201127169

  10. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorials
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Frontispiece
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Information for authors (pages 226–227)

      Version of Record online: 15 DEC 2011 | DOI: 10.1002/pssa.201221906

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