Recombination via point defects and their complexes in solar silicon (pages 1884–1893)
A. R. Peaker, V. P. Markevich, B. Hamilton, G. Parada, A. Dudas, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon and G. Rozgonyi
Article first published online: 4 OCT 2012 | DOI: 10.1002/pssa.201200216
Achieving high efficiency in low cost silicon solar cells is a key goal in the quest for effective renewable energy sources. In this Feature Article the authors have studied the recombination process in solar silicon involving defects and impurities which degrade the cell efficiency. Lifetime mapping measurement using microwave detected photoconductivity decay shows that the parasitic recombination is concentrated in specific regions of multi-crystalline ingots. Localised Laplace Deep Level Transient Spectroscopy has been used to distinguish isolated point defects, small precipitate complexes and decorated extended defects. It is concluded that in most multi-crystalline materials the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries.