physica status solidi (a)

Cover image for Vol. 209 Issue 10

October 2012

Volume 209, Issue 10

Pages 1821–2092

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
      Front Cover: Embedded metal nanopatterns for near-field scattering-enhanced optical absorption (Phys. Status Solidi A 10/2012)

      Fan Ye, Michael J. Burns and Michael J. Naughton

      Article first published online: 15 OCT 2012 | DOI: 10.1002/pssa.201290025

      Thumbnail image of graphical abstract

      Optimizing light trapping in thin-film solar cells has been intensively investigated in recent years. Ye, Burns and Naughton (pp. 1829–1834) use simulations to show that subwavelength-dimensioned metal nanopatterns embedded in a thin film of amorphous silicon (a-Si) significantly enhance its optical absorbance, with more than 300% increase at 800 nm wavelength. Embedding such metal patterns inside a photovoltaic absorber concentrates the electromagnetic field associated with enhanced near-field scattering in the vicinity of the pattern. Configured with an insulating coating, this optical metamedium is proposed as a means to increase the efficiency of thin film solar cells. The cover figure shows cross-section views of the calculated power loss density (i.e. absorbance) in a 60 nm thick a-Si film embedded with a 20 nm thick Ag nanopattern, demonstrating the advantage of embedment over surface or back contact placement of the pattern.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
      Back Cover: Recombination via point defects and their complexes in solar silicon (Phys. Status Solidi A 10/2012)

      A. R. Peaker, V. P. Markevich, B. Hamilton, G. Parada, A. Dudas, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon and G. Rozgonyi

      Article first published online: 15 OCT 2012 | DOI: 10.1002/pssa.201290026

      Thumbnail image of graphical abstract

      The back-cover image, taken from the Feature Article by A. R. Peaker et al. (pp. 1884–1893), depicts a map of the minority carrier lifetime of an inexpensive form of silicon used to manufacture solar photovoltaic cells. The silicon is cast from relatively impure feedstock and is much cheaper than electronic grade silicon grown by conventional Czochralski or float zone methods. However, the minority carrier lifetime and hence the efficiency of solar cells made from it are considerably less than electronic grade. The picture shows the variation of lifetime between grains represented by a spectrum of colours (red relates to a short lifetime while blue indicates the longest lifetime). It can be seen that variations occur across the material not necessarily related to the grain boundaries. Maps such as this, used in conjunction with other techniques, can enable the lifetime to be correlated with specific defects and recombination processes and, in favourable circumstances, enable much higher efficiencies to be achieved.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
      Issue Information

      Article first published online: 15 OCT 2012 | DOI: 10.1002/pssa.201290027

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
      Contents: (Phys. Status Solidi A 10/2012) (pages 1821–1827)

      Article first published online: 15 OCT 2012 | DOI: 10.1002/pssa.201221934

  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
  6. Advanced Materials Physics

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
  7. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
      Static and dynamic characterization of AlN and nanocrystalline diamond membranes (pages 1835–1842)

      Fabian Knöbber, Verena Zürbig, Nicola Heidrich, Jakob Hees, Ram Ekwal Sah, Martina Baeumler, Steffen Leopold, Daniel Pätz, Oliver Ambacher and Vadim Lebedev

      Article first published online: 10 JUL 2012 | DOI: 10.1002/pssa.201228180

      Thumbnail image of graphical abstract

      AlN and nanocrystalline diamond (NCD) are both widely used materials for micro-electro-mechanical systems (MEMS). Recently, several AlN-NCD heterostructures, made of sputtered AlN on CVD grown NCD films, have been reported for the use in MEMS resonators, surface acoustic wave devices and micro-optics. In the development of such structures, the mechanical properties of the thin films play a key role. Knöbber et al. compare three characterization techniques, namely the radius-of-curvature measurement, the bulge test and laser vibrometry of both, sputtered AlN and MW-PECVD grown NCD samples. From this, values of residual stress and Young's modulus are derived and the instrumental accuracy of the measurement techniques is discussed.

  8. Frontispiece

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
      Frontispiece: Size independent blue luminescence in nitrogen passivated silicon nanocrystals (Phys. Status Solidi A 10/2012) (page 1843)

      Mita Dasog and Jonathan G. C. Veinot

      Article first published online: 15 OCT 2012 | DOI: 10.1002/pssa.201221936

      Thumbnail image of graphical abstract

      Surface chemistry can play an important role in determining the optical properties of silicon nanocrystals. On this page, referring to the article by Mita Dasog and Jonathan G. C. Veinot (pp. 1844–1846) it is shown that by changing the surface of silicon nanocrystals, their emission color can be tuned. Hydride surface terminated silicon nanocrystals emit red/orange whereas, when surface groups attached through nitrogen atoms are present they emit blue. Chloride atoms quench the photoluminescence. The photoluminescence properties are shown as a background together with a transmission electron micrograph image of silicon nanocrystals.

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Silicon nanocrystals and nanowires

    2. P-doping of Si nanoparticles: The effect of oxidation (pages 1847–1850)

      Alexandra Carvalho, Sven Öberg, Manuel Barroso, Mark J. Rayson and Patrick Briddon

      Article first published online: 13 AUG 2012 | DOI: 10.1002/pssa.201200149

    3. Diagnostic techniques

      Electrically active defects at AlN/Si interface studied by DLTS and ESR (pages 1851–1856)

      Eddy Simoen, Domenica Visalli, Marleen Van Hove, Maarten Leys, Paola Favia, Hugo Bender, Gustaaf Borghs, Ahn Puc Duc Nguyen and Andre Stesmans

      Article first published online: 20 JUL 2012 | DOI: 10.1002/pssa.201200061

    4. Gettering of metal impurities

      Engineering metal precipitate size distributions to enhance gettering in multicrystalline silicon (pages 1861–1865)

      Jasmin Hofstetter, David P. Fenning, Jean-François Lelièvre, Carlos del Cañizo and Tonio Buonassisi

      Article first published online: 14 AUG 2012 | DOI: 10.1002/pssa.201200360

    5. Gettering of transition metals by porous silicon in epitaxial silicon solar cells (pages 1866–1871)

      Hariharsudan Sivaramakrishnan Radhakrishnan, Chihak Ahn, Jan Van Hoeymissen, Frédéric Dross, Nick Cowern, Kris Van Nieuwenhuysen, Ivan Gordon, Robert Mertens and Jef Poortmans

      Article first published online: 7 SEP 2012 | DOI: 10.1002/pssa.201200232

    6. Modeling and ab-initio calculations

      Hydrogen in C-rich Si and the diffusion of vacancy–H complexes (pages 1872–1879)

      S. K. Estreicher, A. Docaj, M. B. Bebek, D. J. Backlund and M. Stavola

      Article first published online: 20 JUL 2012 | DOI: 10.1002/pssa.201200054

  10. Feature Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Point defects and extended defects

      You have free access to this content
      Recombination via point defects and their complexes in solar silicon (pages 1884–1893)

      A. R. Peaker, V. P. Markevich, B. Hamilton, G. Parada, A. Dudas, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon and G. Rozgonyi

      Article first published online: 4 OCT 2012 | DOI: 10.1002/pssa.201200216

      Thumbnail image of graphical abstract

      Achieving high efficiency in low cost silicon solar cells is a key goal in the quest for effective renewable energy sources. In this Feature Article the authors have studied the recombination process in solar silicon involving defects and impurities which degrade the cell efficiency. Lifetime mapping measurement using microwave detected photoconductivity decay shows that the parasitic recombination is concentrated in specific regions of multi-crystalline ingots. Localised Laplace Deep Level Transient Spectroscopy has been used to distinguish isolated point defects, small precipitate complexes and decorated extended defects. It is concluded that in most multi-crystalline materials the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries.

  11. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. Point defects and extended defects

      Light induced degradation in B doped Cz-Si solar cells (pages 1894–1897)

      Alexandra Carvalho, Paulo Santos, José Coutinho, Robert Jones, Mark J. Rayson and Patrick R. Briddon

      Article first published online: 24 JUL 2012 | DOI: 10.1002/pssa.201200196

    2. Void properties in silicon heavily doped with arsenic and phosphorus (pages 1898–1901)

      Vladimir Voronkov, Robert Falster, Maria Porrini and Januscia Duchini

      Article first published online: 17 AUG 2012 | DOI: 10.1002/pssa.201200043

    3. 2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si (pages 1902–1907)

      J. Vanhellemont, H. Yasuda, Y. Tokumoto, Y. Ohno, M. Suezawa and I. Yonenaga

      Article first published online: 23 JUL 2012 | DOI: 10.1002/pssa.201200023

    4. Luminescence of defects and breakdown sites in multicrystalline silicon solar cells (pages 1908–1912)

      D. Mankovics, A. Klossek, Ch. Krause, T. Arguirov, W. Seifert and M. Kittler

      Article first published online: 23 JUL 2012 | DOI: 10.1002/pssa.201200133

    5. A re-examination of cobalt-related defects in n- and p-type silicon (pages 1913–1916)

      Leopold Scheffler, Vladimir Kolkovsky and Jörg Weber

      Article first published online: 23 JUL 2012 | DOI: 10.1002/pssa.201200140

    6. Study of donor–acceptor pair luminescence in highly doped and compensated Cz silicon (pages 1917–1920)

      Béchir Dridi Rezgui, Jordi Veirman, Sébastien Dubois and Olivier Palais

      Article first published online: 20 SEP 2012 | DOI: 10.1002/pssa.201200246

    7. Dislocation motion in Sb-doped SiGe on Si substrate (pages 1921–1925)

      Yoshifumi Yamashita, Takuya Matsunaga, Toru Funaki, Tatsuya Fushimi and Yoichi Kamiura

      Article first published online: 21 AUG 2012 | DOI: 10.1002/pssa.201200208

    8. SiGe layers in silicon device technology

      A comparative analysis of oxidation rates for thin films of SiGe versus Si (pages 1934–1939)

      Ethan Long, Augustinas Galeckas and Andrej Yu. Kuznetsov

      Article first published online: 9 AUG 2012 | DOI: 10.1002/pssa.201200092

    9. Electronic device technology

      Defect engineering for modern power devices (pages 1940–1949)

      Reinhart Job, Johannes G. Laven, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze and Werner Schustereder

      Article first published online: 10 AUG 2012 | DOI: 10.1002/pssa.201200151

    10. Contact engineering for nano-scale CMOS (pages 1954–1959)

      Muhammad Hussain, Hossain Fahad and Ramy Qaisi

      Article first published online: 10 SEP 2012 | DOI: 10.1002/pssa.201200343

    11. Thin films

      Annealing induced defects in SiC, SiOx single layers, and SiC/SiOx hetero-superlattices (pages 1960–1964)

      Kaining Ding, Urs Aeberhard, Wolfhard Beyer, Oleksandr Astakhov, Florian Köhler, Uwe Breuer, Friedhelm Finger, Reinhard Carius and Uwe Rau

      Article first published online: 4 SEP 2012 | DOI: 10.1002/pssa.201200191

    12. Materials preparation, manipulation, and structure

      Energy harvesting using multilayer structure based on La-doped PMN-PT electrostrictive ceramics (pages 1965–1971)

      Hualin Huang, Guorong Li, Lizhu Huang, Wei Ruan, Lihong Cheng, Jiangtao Zeng and Baosong Wen

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssa.201228117

    13. Nanostructures, thin films, surfaces and interfaces

    14. Magnetic properties of Mg-doped AlN zigzag nanowires (pages 1988–1992)

      Yeung Yu Hui, Jing Ye, Rolf Lortz, Kar Seng Teng and Shu Ping Lau

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssa.201228115

    15. Thermionic emission characterization of boron-doped microcrystalline diamond films at elevated temperatures (pages 1993–1995)

      William F. Paxton, Travis Wade, Mick Howell, Norman Tolk, Wang P. Kang and Jim L. Davidson

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssa.201228114

    16. Resistive-switching behavior and mechanism in copper-nitride thin films prepared by DC magnetron sputtering (pages 1996–2001)

      Wei Zhu, Xin Zhang, Xiaoniu Fu, Yongning Zhou, Shengyun Luo and Xiaojing Wu

      Article first published online: 5 JUN 2012 | DOI: 10.1002/pssa.201228175

    17. Titanium oxide nanospheres: preparation, characterization, and wide-spectral absorption (pages 2020–2026)

      Zhan Wu, Zhi-Kun Zhang, Deng-Zhu Guo, Ying-Jie Xing and Geng-Min Zhang

      Article first published online: 14 JUN 2012 | DOI: 10.1002/pssa.201228153

    18. Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE (pages 2041–2044)

      Shulai Huang, Ziwu Ji, Mingwen Zhao, Lei Zhang, Hongyu Guo, Baoli Liu, Xiangang Xu and Qixin Guo

      Article first published online: 26 JUN 2012 | DOI: 10.1002/pssa.201228106

    19. Understanding and morphology control of pore modulations in nanoporous anodic alumina by discontinuous anodization (pages 2045–2048)

      Abel Santos, Lukas Vojkuvka, María Alba, Victor S. Balderrama, Josep Ferré-Borrull, Josep Pallarès and Lluís F. Marsal

      Article first published online: 26 JUN 2012 | DOI: 10.1002/pssa.201228150

    20. Charge transport phenomena; superconductivity

      The effect of synthesis parameters on transport properties of nanostructured bulk thermoelectric p-type silicon germanium alloy (pages 2049–2058)

      Zahra Zamanipour, Xinghua Shi, Arash M. Dehkordi, Jerzy S. Krasinski and Daryoosh Vashaee

      Article first published online: 26 JUN 2012 | DOI: 10.1002/pssa.201228102

    21. Magnetic properties; magnetic resonances

      Magnetic field dependence of the effective permittivity in multiferroic composites (pages 2059–2062)

      Yaojin Wang, Davresh Hasanyan, Menghui Li, Junqi Gao, Ravindranath Viswan, Jiefang Li and D. Viehland

      Article first published online: 18 JUN 2012 | DOI: 10.1002/pssa.201228278

    22. Dielectric and ferroelectric properties

    23. Device-related phenomena

    24. Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics (pages 2087–2090)

      Jaehyun Yang, Joong Keun Park, Sunkook Kim, Woong Choi, Sangyoon Lee and Hyoungsub Kim

      Article first published online: 10 JUL 2012 | DOI: 10.1002/pssa.201228303

  12. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Advanced Materials Physics
    8. Editor's Choice
    9. Frontispiece
    10. Original Papers
    11. Feature Article
    12. Original Papers
    13. Information for authors
    1. You have free access to this content
      Information for authors (pages 2091–2092)

      Article first published online: 15 OCT 2012 | DOI: 10.1002/pssa.201221937

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