Site-controlled quantum dot growth on buried oxide stressor layers (pages 2411–2420)
André Strittmatter, André Holzbecher, Andrei Schliwa, Jan-Hindrik Schulze, David Quandt, Tim David Germann, Alexander Dreismann, Ole Hitzemann, Erik Stock, Irina A. Ostapenko, Sven Rodt, Waldemar Unrau, Udo W. Pohl, Axel Hoffmann, Dieter Bimberg and Vladimir Haisler
Article first published online: 5 NOV 2012 | DOI: 10.1002/pssa.201228407
This Feature Article gives insight into a buried stressor approach by which QD site-control is combined with self-alignment of current injection. An aperture within a laterally oxidized layer serves as buried stressor and simultaneously confines the current injection path of vertical pn-diodes. The figure shows a mesa and the buried stressor structure (inset). Exclusive QD nucleation at the mesa center is seen in the AFM image (upper image).