physica status solidi (a)

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Cover image for Vol. 209 Issue 3

March 2012

Volume 209, Issue 3

Pages 409–595

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Editor's Choice
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Front Cover: Thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures (Phys. Status Solidi A 3/2012)

      Philip A. Shields, Martin D. B. Charlton, Christopher J. Lewins, Xiang Gao, Duncan W. E. Allsopp, Wang N. Wang and Bedwyr Humphreys

      Article first published online: 27 FEB 2012 | DOI: 10.1002/pssa.201290003

      Thumbnail image of graphical abstract

      Buried photonic crystals are an effective way of modifying the far-field pattern from light-emitting diodes. By creating the active region after the photonic crystal is defined, etch-related damage to the device can be avoided. In addition, stronger coupling of the emission to the photonic crystal can be achieved when compared with surface photonic crystals. The interaction of the active region with the photonic crystal is then governed by the profile of the optical modes within the high-refractive index semiconductor.

      In the Editor's Choice article on pp. 451–455, Philip A. Shields et al. report finite difference time domain simulations and far-field photoluminescence experiments of full LED devices consisting of deep-etched photonic quasi-crystal structures capped by InGaN/GaN quantum wells. It is found that there is a strong interaction with the dominant low order mode when the coalesced layer thickness is reduced. However, there is still a significant contribution from high-order modes.

      The upper front cover image shows a far-field light intensity emission pattern at 475 nm whilst the lower image shows a schematic of the device structure.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Editor's Choice
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Back Cover: Study of defects and lifetime of green InGaN laser diodes (Phys. Status Solidi A 3/2012)

      Uwe Strauss, Teresa Lermer, Jens Müller, Thomas Hager, Georg Brüderl, Adrian Avramescu, Alfred Lell and Christoph Eichler

      Article first published online: 27 FEB 2012 | DOI: 10.1002/pssa.201290004

      Thumbnail image of graphical abstract

      InGaN quantum wells for direct green lasers with indium concentrations of about 30% are studied by Uwe Strauss and co-workers (pp. 481–486) in respect to defect structure and influence of defects on device lifetime. A new test structure enables them to determine strain relaxation in In-rich layers by X-ray diffraction even at typical well thicknesses of few nanometers. The cover shows reciprocal space maps of such a test structure including quantum wells for green lasers and a reference structure, respectively. The authors describe that there is a high risk to generate screw and edge dislocations in the In-rich quantum wells in non-optimized structures as verified by transmission electron microscopy. Such defects strongly influence the device lifetime of green lasers. Optimized active layers already enable stable operation over a period of more than 1000 hours at 50 mW constant power at 517 nm emission wavelength with an extrapolated increase of operation current by less than 30% within this time.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Editor's Choice
    9. Original Papers
    10. Information for authors
    1. Issue Information

      Article first published online: 27 FEB 2012 | DOI: 10.1002/pssa.201290005

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Editor's Choice
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Contents: (Phys. Status Solidi 3/2012) (pages 409–413)

      Article first published online: 27 FEB 2012 | DOI: 10.1002/pssa.201221910

  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Editor's Choice
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Recent and forthcoming publications in pss (page 414)

      Article first published online: 27 FEB 2012 | DOI: 10.1002/pssa.201221911

  6. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Editor's Choice
    9. Original Papers
    10. Information for authors

    1. Bulk and template growth

      Growth of AlN bulk single crystals on 4H-SiC substrates and analyses of their structural quality and growth mode evolution (pages 415–418)

      R. R. Sumathi, R. U. Barz, A. M. Gigler, T. Straubinger and P. Gille

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssa.201100348

    2. Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content (pages 419–423)

      S. V. Novikov, K. M. Yu, A. X. Levander, Z. Liliental-Weber, R. dos Reis, A. J. Kent, A. Tseng, O. D. Dubon, J. Wu, J. Denlinger, W. Walukiewicz, F. Luckert, P. R. Edwards, R. W. Martin and C. T. Foxon

      Article first published online: 20 JAN 2012 | DOI: 10.1002/pssa.201100312

    3. Epitaxial growth and structural properties

      Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope (pages 424–426)

      G. Naresh-Kumar, B. Hourahine, A. Vilalta-Clemente, P. Ruterana, P. Gamarra, C. Lacam, M. Tordjman, M. A. di Forte-Poisson, P. J. Parbrook, A. P. Day, G. England and C. Trager-Cowan

      Article first published online: 25 JAN 2012 | DOI: 10.1002/pssa.201100416

    4. Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates (pages 427–430)

      Philipp Drechsel, Peter Stauss, Werner Bergbauer, Patrick Rode, Stephanie Fritze, Alois Krost, Toni Markurt, Tobias Schulz, Martin Albrecht, Henning Riechert and Ulrich Steegmüller

      Article first published online: 13 JAN 2012 | DOI: 10.1002/pssa.201100477

    5. Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica (pages 431–433)

      Stacia Keller, Jing Lu, Umesh K. Mishra, Steven P. DenBaars and James S. Speck

      Article first published online: 9 JAN 2012 | DOI: 10.1002/pssa.201100349

    6. Nanostructures and novel nitride alloys

      Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD (pages 434–438)

      Özgür Kelekçi, Pınar T. Taşlı, HongBo Yu, Mehmet Kasap, Süleyman Özçelik and Ekmel Özbay

      Article first published online: 20 JAN 2012 | DOI: 10.1002/pssa.201100313

    7. Current–voltage characteristics of cubic Al(Ga)N/GaN double barrier structures on 3C–SiC (pages 439–442)

      C. Mietze, K. Lischka and D. J. As

      Article first published online: 23 DEC 2011 | DOI: 10.1002/pssa.201100376

    8. Self-assembled GaN nanostructures by dry etching and their optical properties (pages 443–446)

      Anna Haab, Martin Mikulics, Andreas Winden, Sally Voigt, Martina von der Ahe, Jürgen Moers, Konrad Wirtz, Toma Stoica, Detlev Grützmacher and Hilde Hardtdegen

      Article first published online: 9 JAN 2012 | DOI: 10.1002/pssa.201100478

    9. InN and related materials

      Fabrication of a-plane InN nanostructures on patterned a-plane GaN template by ECR-MBE (pages 447–450)

      Tsutomu Araki, Shuhei Yamashita, Tomohiro Yamaguchi, Euijoon Yoon and Yasushi Nanishi

      Article first published online: 9 FEB 2012 | DOI: 10.1002/pssa.201100520

  7. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Editor's Choice
    9. Original Papers
    10. Information for authors

    1. Light emitting diodes and improving efficiency

      You have free access to this content
      Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures (pages 451–455)

      Philip A. Shields, Martin D. B. Charlton, Christopher J. Lewins, Xiang Gao, Duncan W. E. Allsopp, Wang N. Wang and Bedwyr Humphreys

      Article first published online: 20 JAN 2012 | DOI: 10.1002/pssa.201100420

  8. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Editor's Choice
    9. Original Papers
    10. Information for authors

    1. Light emitting diodes and improving efficiency

      Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling (pages 456–460)

      D. A. Zakheim, A. S. Pavluchenko, D. A. Bauman, K. A. Bulashevich, O. V. Khokhlev and S. Yu. Karpov

      Article first published online: 10 JAN 2012 | DOI: 10.1002/pssa.201100317

    2. Colorimetry and efficiency of white LEDs: Spectral width dependence (pages 461–464)

      Elaine Taylor, Paul R. Edwards and Robert W. Martin

      Article first published online: 9 FEB 2012 | DOI: 10.1002/pssa.201100449

    3. Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter (pages 465–468)

      B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies

      Article first published online: 23 JAN 2012 | DOI: 10.1002/pssa.201100494

    4. Green light-emitting diodes fabricated on semipolar (11–22) GaN on r-plane patterned sapphire substrate (pages 469–472)

      Narihito Okada, Katsumi Uchida, Seita Miyoshi and Kazuyuki Tadatomo

      Article first published online: 9 JAN 2012 | DOI: 10.1002/pssa.201100385

    5. Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate (pages 473–476)

      Tomonari Shioda, Hisashi Yoshida, Koichi Tachibana, Naoharu Sugiyama and Shinya Nunoue

      Article first published online: 9 JAN 2012 | DOI: 10.1002/pssa.201100356

    6. Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes (pages 477–480)

      J. Bai, Q. Wang and T. Wang

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssa.201100456

    7. Lasing and laser diodes

      Study of defects and lifetime of green InGaN laser diodes (pages 481–486)

      Uwe Strauss, Teresa Lermer, Jens Müller, Thomas Hager, Georg Brüderl, Adrian Avramescu, Alfred Lell and Christoph Eichler

      Article first published online: 9 JAN 2012 | DOI: 10.1002/pssa.201100454

    8. Theory and modelling of materials and devices

      Simulation of InGaN quantum well LEDs with reduced internal polarization (pages 487–490)

      Zhelio Andreev, Friedhard Römer and Bernd Witzigmann

      Article first published online: 1 FEB 2012 | DOI: 10.1002/pssa.201100377

    9. Power and high frequency devices

      GaN-based high-frequency devices and circuits: A Fraunhofer perspective (pages 491–496)

      Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Michael Dammann, Markus Cäsar, Stefan Müller, Friedbert van Raay, Rudolf Kiefer, Peter Brückner, Jutta Kühn, Markus Musser, Lutz Kirste, Christian Haupt, Wilfried Pletschen, Taek Lim, Rolf Aidam, Michael Mikulla and Oliver Ambacher

      Article first published online: 9 JAN 2012 | DOI: 10.1002/pssa.201100452

    10. GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3 MW/cm2) (pages 497–500)

      Yi-Che Lee, Yun Zhang, Zachary M. Lochner, Hee-Jin Kim, Jae-Hyun Ryou, Russell D. Dupuis and Shyh-Chiang Shen

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssa.201100436

    11. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers (pages 501–504)

      Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Kenichiro Takeda, Motoaki Iwaya, Yoshio Honda and Hiroshi Amano

      Article first published online: 15 FEB 2012 | DOI: 10.1002/pssa.201100379

    12. Materials preparation, manipulation, and structure

      Structure and electrical properties of (Bi0.5Na0.5)1–x–y–z(Bi0.5K0.5)xBay(Bi0.5Li0.5)zTiO3 lead-free piezoelectric ceramics (pages 505–511)

      Dunmin Lin, Qiaoji Zheng, Xiaochun Wu, Ximing Fan, Hailing Sun, Lang Wu and Chenggang Xu

      Article first published online: 6 DEC 2011 | DOI: 10.1002/pssa.201127268

    13. Bonding of low temperature co-fired ceramics to copper and to ceramic blocks by reactive aluminum/nickel multilayers (pages 512–518)

      Rolf Grieseler, Tilo Welker, Jens Müller and Peter Schaaf

      Article first published online: 13 DEC 2011 | DOI: 10.1002/pssa.201127470

    14. Nanostructures, thin films, surfaces and interfaces

      Size and concentration controlled growth of porous gold nanofilm (pages 519–523)

      Renyun Zhang, Magnus Hummelgård and Håkan Olin

      Article first published online: 5 DEC 2011 | DOI: 10.1002/pssa.201127405

    15. Deposition of thin films by sputtering cold isostatically pressed powder targets: A case study (pages 524–530)

      Francis Boydens, Wouter Leroy, Rosita Persoons and Diederik Depla

      Article first published online: 9 DEC 2011 | DOI: 10.1002/pssa.201127490

    16. Copper oxide thin films by chemical vapor deposition: Synthesis, characterization and electrical properties (pages 531–536)

      Sebastian Eisermann, Achim Kronenberger, Andreas Laufer, Johannes Bieber, Gunther Haas, Stefan Lautenschläger, Gerd Homm, Peter J. Klar and Bruno K. Meyer

      Article first published online: 9 DEC 2011 | DOI: 10.1002/pssa.201127493

    17. Hydrothermal synthesis and optical properties of hexagonal tungsten oxide nanocrystals assisted by ammonium tartrate (pages 537–544)

      Hua-Feng Pang, Xia Xiang, Zhi-Jie Li, Yong-Qing Fu and Xiao-Tao Zu

      Article first published online: 9 DEC 2011 | DOI: 10.1002/pssa.201127456

    18. Pulsed laser deposition from a pre-synthesized Cr2AlC MAX phase target with and without ion-beam assistance (pages 545–552)

      C. Lange, M. Hopfeld, M. Wilke, J. Schawohl, Th. Kups, M. W. Barsoum and P. Schaaf

      Article first published online: 13 DEC 2011 | DOI: 10.1002/pssa.201127537

    19. Core-shell SiC/SiO2 heterostructures in nanowires (pages 553–558)

      Renbing Wu, Bailin Zha, Liuying Wang, Kun Zhou and Yi Pan

      Article first published online: 20 DEC 2011 | DOI: 10.1002/pssa.201127459

    20. Optical properties

      Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire (pages 559–564)

      K. Y. Lai, T. Paskova, V. D. Wheeler, T. Y. Chung, J. A. Grenko, M. A. L. Johnson, K. Udwary, E. A. Preble and K. R. Evans

      Article first published online: 29 NOV 2011 | DOI: 10.1002/pssa.201127345

    21. Fluorescence quenching in porous silicon/conjugated polymer composites (pages 565–569)

      Vytenis Pranculis, Renata Karpicz, Arturs Medvids and Vidmantas Gulbinas

      Article first published online: 29 NOV 2011 | DOI: 10.1002/pssa.201127309

    22. Dysprosium doped lead fluoroborate glasses: Structural, optical, and thermal investigations (pages 570–578)

      I. Arul Rayappan, K. Maheshvaran, S. Surendra Babu and K. Marimuthu

      Article first published online: 13 DEC 2011 | DOI: 10.1002/pssa.201127386

    23. Device-related phenomena

      GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN–GaN intermediate layer (pages 579–584)

      Kai Hsuan Lee, Ping Chuan Chang, Shoou Jinn Chang and San Lein Wu

      Article first published online: 23 DEC 2011 | DOI: 10.1002/pssa.201127545

    24. Interface properties of OFETs based on an air-stable n-channel perylene tetracarboxylic diimide semiconductor (pages 585–593)

      Franziska Lüttich, Daniel Lehmann, Marion Friedrich, Zhihua Chen, Antonio Facchetti, Christian von Borczyskowski, Dietrich R. T. Zahn and Harald Graaf

      Article first published online: 27 DEC 2011 | DOI: 10.1002/pssa.201127592

  9. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Editor's Choice
    9. Original Papers
    10. Information for authors
    1. Information for authors (pages 594–595)

      Article first published online: 27 FEB 2012 | DOI: 10.1002/pssa.201221912

SEARCH

SEARCH BY CITATION