physica status solidi (a)

Cover image for Vol. 209 Issue 6

June 2012

Volume 209, Issue 6

Pages 1009–1199

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Front Cover: Cu2ZnSnSe4 absorbers processed from solution deposited metal salt precursors under different selenization conditions (Phys. Status Solidi A 6/2012)

      Carolin M. Fella, Alexander R. Uhl, Yaroslav E. Romanyuk and Ayodhya N. Tiwari

      Version of Record online: 12 JUN 2012 | DOI: 10.1002/pssa.201290012

      Thumbnail image of graphical abstract

      Thin film solar cells based on low cost and earth-abundant or readily available elements, Cu2ZnSnSe4 or Cu2ZnSnSe4 (called kesterites according to their crystal structure), have received increasing interest during the last years since they have suitable physical properties for photovoltaics. A variety of vacuum and non-vacuum deposition methods have resulted in highest conversion efficiencies of about 10%. The metal ratios of the thin layers strongly influence the solar cell device efficiency. Therefore, it is very important to understand whether initial metal ratios are retained in the sulfurized/selenized layer or any losses occur due to the formation of volatile phases that originate during the precursor conversion. One reason for deviations in the metal composition is the thermal decomposition of kesterites at elevated temperatures in combination with low selenium vapor pressure. Fella et al. (pp. 1043–1048) report on controlling the overall composition of selenized Cu2ZnSnSe4 layers. A simple, sustainable, and low cost solution approach is employed for depositing the metal precursor. The cover image illustrates the precursor solutions and the secondary electron micrograph of a Cu2ZnSnSe4 absorber resulting in a highest conversion efficiency of 4.3%.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Inside Back Cover: Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment (Phys. Status Solidi A 6/2012)

      Ming-Yu Li, Jihoon Lee, Zhiming Wang, Yusuke Hirono, Jiang Wu, Sangmin Song, Sang-Mo Koo, Eun-Soo Kim and Gregory J. Salamo

      Version of Record online: 12 JUN 2012 | DOI: 10.1002/pssa.201290013

      Thumbnail image of graphical abstract

      Due to the highly flexible nature of self-assembly and a wide range of applications in molecular beam epitaxy, droplet epitaxy is gaining significant research interest for the fabrication of low-dimensional semiconductor quantum- and nano-structures by self-assembly. Optoelectronic device applications such as solar cells using GaAs quantum rings, inter-sublevel infrared photodetectors and lasers have been demonstrated through droplet epitaxy. Thus, the control of density and size of metal droplets (MDs) on a patterned GaAs(100) surface becomes an essential step for further development. Ming-Yu Li et al. (pp. 1075–1079) present an attempt to demonstrate a sharp contrast in size and density of Ga MDs on patterned GaAs(100) through conventional photolithography. The etched surface exhibits a much higher density and smaller diameter and height of MDs. As clearly evidenced by SEM and AFM, the MD density between etched (patterned) and un-etched (un-patterned) surfaces can be sharply different up to one order of magnitude under identical growth conditions.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Back Cover: Texture-etched ZnO as a versatile base for optical back reflectors with well-designed surface morphologies for application in thin film solar cells (Phys. Status Solidi A 6/2012)

      W. Böttler, V. Smirnov, J. Hüpkes and F. Finger

      Version of Record online: 12 JUN 2012 | DOI: 10.1002/pssa.201290014

      Thumbnail image of graphical abstract

      The improvement of light trapping is of great importance in the development of high efficiency thin film silicon solar cells. Texture-etched ZnO has been often used as front contact in solar cells, where the requirements for the transmission and resistance limit the optimization of the texture morphology. The work by Böttler et al. (pp. 1144–1149) demonstrates that in the case of solar cells where the ZnO layer is used as a back reflector, its morphology can be tuned over a wide range by controlling etching time and as-deposited thickness of the ZnO layer. A statistical analysis of the ZnO surface morphology indicates that with optimized diameter, depth and opening angle of the craters on the surface one can improve light trapping and the conversion efficiency of solar cells.

  4. Issue Information

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Issue Information

      Version of Record online: 12 JUN 2012 | DOI: 10.1002/pssa.201290015

  5. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
  6. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
  7. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. Light emission

      Excitation effects and luminescence stability in porous SiO2:C layers (pages 1015–1021)

      Andriy Vasin, Andriy Rusavsky, Alexei Nazarov, Vladimir Lysenko, Galyna Rudko, Yurii Piryatinski, Ivan Blonsky, Jarno Salonen, Ermei Makila and Sergii Starik

      Version of Record online: 4 APR 2012 | DOI: 10.1002/pssa.201100815

    2. White light emission from amorphous silicon-oxycarbide materials (pages 1022–1025)

      Yukari Ishikawa, Koji Sato, Shinji Kawasaki, Yosuke Ishii, Akihiro Matsumura and Shunsuke Muto

      Version of Record online: 16 APR 2012 | DOI: 10.1002/pssa.201100816

    3. Solar cells

      Nanowire solar cells using hydrogenated amorphous silicon: A modeling study (pages 1026–1030)

      D. Diouf, I. Ngo, J.-P. Kleider, M. Gueunier-Farret and J. Alvarez

      Version of Record online: 22 MAR 2012 | DOI: 10.1002/pssa.201100756

    4. Promising amorphous materials

      Amorphous phase of GeTe-based phase-change memory alloys: Polyvalency of Ge[BOND]Te bonding and polyamorphism (pages 1031–1035)

      Alexander V. Kolobov, Paul Fons, Milos Krbal and Junji Tominaga

      Version of Record online: 4 APR 2012 | DOI: 10.1002/pssa.201100752

  8. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Cu2ZnSnSe4 absorbers processed from solution deposited metal salt precursors under different selenization conditions (pages 1043–1048)

      Carolin M. Fella, Alexander R. Uhl, Yaroslav E. Romanyuk and Ayodhya N. Tiwari

      Version of Record online: 10 APR 2012 | DOI: 10.1002/pssa.201228003

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. Nanostructures, thin films, surfaces and interfaces

      X-ray photoelectron spectroscopy of pulsed laser deposited Pb(Zr,Ti)O3−δ (pages 1049–1052)

      Cristina Dragoi, Nicoleta G. Gheorghe, George A. Lungu, Lucian Trupina, Andra G. Ibanescu and Cristian M. Teodorescu

      Version of Record online: 5 MAR 2012 | DOI: 10.1002/pssa.201127740

    2. TiAl Ohmic contact on GaN, in situ high or low doped or Si implanted, epitaxially grown on sapphire or silicon (pages 1059–1066)

      F. Cayrel, O. Ménard, A. Yvon, N. Thierry-Jébali, C. Brylinsky, E. Collard and D. Alquier

      Version of Record online: 22 FEB 2012 | DOI: 10.1002/pssa.201127564

    3. Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment (pages 1075–1079)

      Ming-Yu Li, Jihoon Lee, Zhiming Wang, Yusuke Hirono, Jiang Wu, Sangmin Song, Sang-Mo Koo, Eun-Soo Kim and Gregory J. Salamo

      Version of Record online: 5 MAR 2012 | DOI: 10.1002/pssa.201127692

    4. Anisotropic strain in α-plane GaN and polarization dependence of the Raman peaks (pages 1085–1089)

      M. Katsikini, J. Arvanitidis, D. Christofilos, S. Ves, G. P. Dimitrakopulos, G. Tsiakatouras, K. Tsagaraki and A. Georgakilas

      Version of Record online: 12 MAR 2012 | DOI: 10.1002/pssa.201127629

    5. Epitaxial La0.7Sr0.3MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular-beam epitaxy (pages 1090–1095)

      L. Méchin, C. Adamo, S. Wu, B. Guillet, S. Lebargy, C. Fur, J.-M. Routoure, S. Mercone, M. Belmeguenai and D. G. Schlom

      Version of Record online: 12 MAR 2012 | DOI: 10.1002/pssa.201127712

    6. Electron microscopic imaging of an ion beam mixed SiO2/Si interface correlated with photo- and cathodoluminescence (pages 1101–1108)

      H.-J. Fitting, L. Fitting Kourkoutis, B. Schmidt, B. Liedke, E. V. Ivanova, M. V. Zamoryanskaya, V. A. Pustovarov and A. F. Zatsepin

      Version of Record online: 14 MAR 2012 | DOI: 10.1002/pssa.201127617

    7. Charge transport phenomena; superconductivity

      Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures (pages 1119–1123)

      Aydın Bayraklı, Engin Arslan, Tezer Fırat, Şadan Özcan, Özgür Kazar, Hüseyin Çakmak and Ekmel Özbay

      Version of Record online: 24 FEB 2012 | DOI: 10.1002/pssa.201127416

    8. Enhanced thermoelectric performance of Ag0.8Pb18SbTe20 alloyed with Se (pages 1124–1127)

      Taichao Su, Youmo Zhou, Hongtao Li, Shangsheng Li, Xiaolei Li, Le Deng, Yantao Su, Jian Liu, Yu Sui, Hongan Ma and Xiaopeng Jia

      Version of Record online: 7 MAR 2012 | DOI: 10.1002/pssa.201127501

    9. Optical properties

      Spectroscopic properties of Nd:Sr3Gd2(BO3)4 (pages 1128–1133)

      Yan Zhang and Guofu Wang

      Version of Record online: 14 MAR 2012 | DOI: 10.1002/pssa.201127735

    10. Magnetic properties; magnetic resonances

      Superparamagnetism in CuFeInTe3 and CuFeGaTe3 alloys (pages 1141–1143)

      P. Grima-Gallardo, F. Alvarado, M. Muñoz, S. Durán, M. Quintero, L. Nieves, E. Quintero, R. Tovar, M. Morocoima and M. A. Ramos

      Version of Record online: 5 MAR 2012 | DOI: 10.1002/pssa.201127663

    11. Device-related phenomena

    12. You have full text access to this OnlineOpen article
    13. Fabrication and characterization of CdSe/ZnS quantum-dot LEDs (pages 1163–1167)

      Huu Tuan Nguyen, Thu Nga Pham, Ken Ha Koh and Soonil Lee

      Version of Record online: 20 FEB 2012 | DOI: 10.1002/pssa.201228066

    14. Characteristics and simulation analysis of GaN-based vertical light emitting diodes via wafer-level additional surface roughening process (pages 1168–1173)

      Seong-Ju Bae, JeHyuk Choi, Dong-Hyun Kim, In-Chan Ju, Chan-Soo Shin, Chul-Gi Ko and Jae Su Yu

      Version of Record online: 5 MAR 2012 | DOI: 10.1002/pssa.201127557

    15. Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors (pages 1174–1178)

      Shaobo Dun, Yang Jiang, Jingqiang Li, Yulong Fang, Jiayun Yin, Bo Liu, Jingjing Wang, Hong Chen, Zhihong Feng and Shujun Cai

      Version of Record online: 5 MAR 2012 | DOI: 10.1002/pssa.201127553

    16. Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices (pages 1179–1183)

      Sharif Md. Sadaf, Xinjun Liu, Myungwoo Son, Sangsu Park, Sakeb H. Choudhury, Euijun Cha, Manzar Siddik, Jungho Shin and Hyunsang Hwang

      Version of Record online: 7 MAR 2012 | DOI: 10.1002/pssa.201127659

    17. Deep centers in a CuInGaSe2/CdS/ZnO:B solar cell (pages 1192–1197)

      In-Hwan Choi, Chul-Hwan Choi and Joo-Won Lee

      Version of Record online: 16 MAR 2012 | DOI: 10.1002/pssa.201127596

  10. Information for authors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Information for authors (pages 1198–1199)

      Version of Record online: 12 JUN 2012 | DOI: 10.1002/pssa.201221923

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