Inside Back Cover: Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment (Phys. Status Solidi A 6/2012)
Ming-Yu Li, Jihoon Lee, Zhiming Wang, Yusuke Hirono, Jiang Wu, Sangmin Song, Sang-Mo Koo, Eun-Soo Kim and Gregory J. Salamo
Article first published online: 12 JUN 2012 | DOI: 10.1002/pssa.201290013
Due to the highly flexible nature of self-assembly and a wide range of applications in molecular beam epitaxy, droplet epitaxy is gaining significant research interest for the fabrication of low-dimensional semiconductor quantum- and nano-structures by self-assembly. Optoelectronic device applications such as solar cells using GaAs quantum rings, inter-sublevel infrared photodetectors and lasers have been demonstrated through droplet epitaxy. Thus, the control of density and size of metal droplets (MDs) on a patterned GaAs(100) surface becomes an essential step for further development. Ming-Yu Li et al. (pp. 1075–1079) present an attempt to demonstrate a sharp contrast in size and density of Ga MDs on patterned GaAs(100) through conventional photolithography. The etched surface exhibits a much higher density and smaller diameter and height of MDs. As clearly evidenced by SEM and AFM, the MD density between etched (patterned) and un-etched (un-patterned) surfaces can be sharply different up to one order of magnitude under identical growth conditions.