physica status solidi (a)

Cover image for Vol. 209 Issue 8

August 2012

Volume 209, Issue 8

Pages 1393–1599

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Advanced Materials Physics
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Front Cover: Ultrahigh gain AlGaN/GaN high energy radiation detectors (Phys. Status Solidi A 8/2012)

      J. D. Howgate, M. Hofstetter, S. J. Schoell, M. Schmid, S. Schäfer, I. Zizak, V. Hable, C. Greubel, G. Dollinger, S. Thalhammer, M. Stutzmann and I. D. Sharp

      Article first published online: 10 AUG 2012 | DOI: 10.1002/pssa.201290019

      Thumbnail image of graphical abstract

      Gallium nitride has a remarkable tolerance to high energy ionizing radiation, but its full potential has not yet been realized due to material issues that lead to persistent photoconductivity, poor sensitivity, and requirements for large operational voltages. However, J. D. Howgate et al. (pp. 1562–1567) demonstrate that the introduction of a two-dimensional electron gas channel, through the construction of AlGaN/GaN heterointerfaces, can be used to create “photomultiplier” equivalent amplification, while eliminating persistent photoconductivity, under operation with single volt bias at room temperature. These results are extremely promising for future ionizing radiation detector technologies for applications ranging from high energy physics to medical imaging. This is demonstrated on the front cover image, where a 3 × 3 mm flashlight bulb was scanned with ultra-low dose rate (thousands of photons per second) focused X-rays, clearly revealing the 50 μm thick spiral filament and the cavity in which it is mounted. Furthermore, such an image could be obtained within milliseconds via device miniaturization using conventional microelectronics techniques that allow for fabrication of integrated two-dimensional pixel detectors. These extreme sensitivities could, for example, enable patient exposures to harmful ionizing radiation to be dramatically reduced or offer low power personal dosimeters capable of giving real-time warning to radiation exposure.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Advanced Materials Physics
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Back Cover: Investigation of Ni/Ag contact to p-GaN with an O2 plasma treatment and its application to GaN-based LEDs (Phys. Status Solidi A 8/2012)

      Nan-Ming Lin, Shih-Chang Shei and Shoou-Jinn Chang

      Article first published online: 10 AUG 2012 | DOI: 10.1002/pssa.201290020

      Thumbnail image of graphical abstract

      Current spreading is an important issue for GaN-based light emitting diodes (LEDs) because the hole concentration in p-GaN is low in general. Even with a transparent current spreading layer, such as indium tin oxide, the current crowding still occurs. Therefore, the photons generated in the active region will be partially absorbed by an opaque p-pad electrode and then cause the decrease of light extraction efficiency. Lin, Shei, and Chang (pp. 1568–1574) investigate the formation of a Schottky contact at the interface of Ni-Ag/p-GaN with an O2 plasma treatment and demonstrate the excellent performance of LEDs with Ni/Ag contact to p-GaN through the O2 plasma treatment. The dominant transport mechanism of the Ni-Ag/p-GaN structure changes from thermionic emission to field emission when increasing the O2 plasma treatment time from 1 min to 5 min. The larger output power should be attributed to best current spreading and a high reflectance of the Ni/Ag mirror.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Advanced Materials Physics
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Issue Information

      Article first published online: 10 AUG 2012 | DOI: 10.1002/pssa.201290021

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Advanced Materials Physics
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Contents: (Phys. Status Solidi A 8/2012) (pages 1393–1397)

      Article first published online: 10 AUG 2012 | DOI: 10.1002/pssa.201221927

  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Advanced Materials Physics
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
  6. Feature Article

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Advanced Materials Physics
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Interfacial doping for efficient charge injection in organic semiconductors (pages 1399–1413)

      Jae-Hyun Lee and Jang-Joo Kim

      Article first published online: 19 JUL 2012 | DOI: 10.1002/pssa.201228199

      Thumbnail image of graphical abstract

      Interfacial doping in organic semiconductors is an important technique to achieve efficient organic electronic devices. In this Feature Article, Lee and Kim discuss how the charge injection into an organic semiconductor can be enhanced by the insertion of a thin interfacial layer or an electrically doped organic semiconductor layer between an electrode and an undoped organic semiconductor. The authors show that the vacuum level shift and Fermi level modification by electrical doping is the origin of efficient charge injection through metal-organic and organic-organic junctions. Application to organic electronics such as organic light-emitting diodes and organic photovoltaics is briefly summarized.

  7. Advanced Materials Physics

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Advanced Materials Physics
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Influence of microstructure on the cross-plane oxygen ion conductivity of yttria stabilized zirconia thin films (pages 1414–1422)

      Meike V. F. Schlupp, Barbara Scherrer, Huan Ma, Jan G. Grolig, Julia Martynczuk, Michel Prestat and Ludwig J. Gauckler

      Article first published online: 10 JUL 2012 | DOI: 10.1002/pssa.201228248

      Thumbnail image of graphical abstract

      In the study by Schlupp et al., cross-plane conductivity measurements are performed on both (111) textured columnar and randomly oriented nanocrystalline 8 mol% yttria stabilized zirconia (8YSZ) thin films with column diameters of 10-20 nm and grain sizes between 3 nm and 13 nm, respectively. Reproducible results are obtained for YSZ samples of 220-600 nm thickness prepared by both physical and chemical thin film deposition methods. The clear microstructure-conductivity relationships established in this study will provide a relevant basis for the engineering of miniaturized low-temperature thin film solid oxide fuel cells.

  8. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Advanced Materials Physics
    9. Original Papers
    10. Information for authors
    1. Hg based II–VI compounds on non-standard substrates (pages 1423–1427)

      Gregory N. Brill, Yuanping Chen, Priyalal S. Wijewarnasuriya and Nibir K. Dhar

      Article first published online: 20 JUN 2012 | DOI: 10.1002/pssa.201100734

    2. MBE growth and design of II–VI heterostructures for epitaxial lift-off (pages 1428–1431)

      Ian A. Davidson, Richard T. Moug, Erin C. Vallance, Maria C. Tamargo and Kevin A. Prior

      Article first published online: 26 JUN 2012 | DOI: 10.1002/pssa.201100584

    3. Materials preparation, manipulation, and structure

      Contact-free reactions between micropipes in bulk SiC growth (pages 1432–1437)

      Mikhail Yu. Gutkin, Alexander G. Sheinerman, Victor G. Kohn, Tatiana S. Argunova, Mikhail A. Smirnov and Jung Ho Je

      Article first published online: 9 MAY 2012 | DOI: 10.1002/pssa.201127682

    4. Role of aluminium oxide in the structure of heavy metal oxide borosilicate glasses (pages 1438–1444)

      Monika, M. Falconieri, S. Baccaro, G. Sharma, K. S. Thind and D. P. Singh

      Article first published online: 4 JUN 2012 | DOI: 10.1002/pssa.201228027

    5. Nanostructures, thin films, surfaces and interfaces

    6. Effect of purple light on the ferroelectric and transport properties of epitaxial Mn-doped BiFeO3 film (pages 1451–1455)

      Zengwei Peng, Baoting Liu, Huijuan Zhu, Qingxun Zhao and Yinglong Wang

      Article first published online: 10 MAY 2012 | DOI: 10.1002/pssa.201228079

    7. Influence of pulsed laser annealing on the optical properties of ZnO nanorods (pages 1461–1466)

      T. N. Lin, C. P. Huang, G. W. Shu, J. L. Shen, C. S. Hsiao and S. Y. Chen

      Article first published online: 16 MAY 2012 | DOI: 10.1002/pssa.201228065

    8. Complex hierarchical arrangements of stacked nanoplates in Al-doped ZnO (pages 1487–1492)

      Y. Ortega, D. Häussler, J. Piqueras, P. Fernández and W. Jäger

      Article first published online: 16 MAY 2012 | DOI: 10.1002/pssa.201228081

    9. Fabrication of Cu2ZnSnS4 absorbers by sulfurization of Sn-rich precursors (pages 1493–1497)

      Jie Ge, Wenlei Yu, Hong Cao, Jinchun Jiang, Jianhua Ma, Lihong Yang, Pingxiong Yang, Zhigao Hu and Junhao Chu

      Article first published online: 16 MAY 2012 | DOI: 10.1002/pssa.201228064

    10. Deposition of hard and adherent TiBCN films for cutting tools applications (pages 1520–1525)

      Wolfgang Tillmann, Gilberto Bejarano and Fabian Hoffmann

      Article first published online: 5 JUN 2012 | DOI: 10.1002/pssa.201228130

    11. Effect of defects on the luminescence in semipolar InGaN/GaN quantum wells on planar and patterned m-plane sapphire substrate (pages 1526–1529)

      Seunga Lee, Jongjin Jang, Kwan-Hyun Lee, Jung-Hwan Hwang, Joocheol Jeong and Okhyun Nam

      Article first published online: 18 JUN 2012 | DOI: 10.1002/pssa.201127653

    12. Charge transport phenomena; superconductivity

    13. Optical properties

      Influence of annealing atmosphere on optical properties of Al-doped ZnO powders (pages 1538–1542)

      Chundong Li, Jinpeng Lv, Bo Zhou and Zhiqiang Liang

      Article first published online: 10 MAY 2012 | DOI: 10.1002/pssa.201228004

    14. Transmission performance of a low-loss metal–insulator–semiconductor plasmonic phase-shift Bragg grating (pages 1552–1556)

      Jing Xiao, Jiansheng Liu, Zheng Zheng, Yusheng Bian, Guanjun Wang and Shuna Li

      Article first published online: 5 JUN 2012 | DOI: 10.1002/pssa.201127773

    15. Magnetic properties; magnetic resonances

    16. Device-related phenomena

      Ultrahigh gain AlGaN/GaN high energy radiation detectors (pages 1562–1567)

      J. D. Howgate, M. Hofstetter, S. J. Schoell, M. Schmid, S. Schäfer, I. Zizak, V. Hable, C. Greubel, G. Dollinger, S. Thalhammer, M. Stutzmann and I. D. Sharp

      Article first published online: 3 MAY 2012 | DOI: 10.1002/pssa.201228097

    17. Analysis of the temperature-dependent current–voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes (pages 1575–1578)

      Basanta Roul, Thirumaleshwara N. Bhat, Mahesh Kumar, Mohana K. Rajpalke, A. T. Kalghatgi and S. B. Krupanidhi

      Article first published online: 10 MAY 2012 | DOI: 10.1002/pssa.201228237

    18. Improved efficiency of hybrid solar cell based on thiols-passivated CdS quantum dots and poly(3-hexythiophene) (pages 1583–1587)

      Xinmei Liu, Yang Jiang, Xinzheng Lan, Yugang Zhang, Chao Liu, Junwei Li, Binbin Wang, Yongqiang Yu and Wenjun Wang

      Article first published online: 16 MAY 2012 | DOI: 10.1002/pssa.201127741

    19. Effect of the pn junction engineering on Si microwire-array solar cells (pages 1588–1591)

      A. Dalmau Mallorquí, F. M. Epple, D. Fan, O. Demichel and A. Fontcuberta i Morral

      Article first published online: 16 MAY 2012 | DOI: 10.1002/pssa.201228165

    20. Effect of C60 as an electron buffer layer in polythiophene-methanofullerene based bulk heterojunction solar cells (pages 1592–1597)

      Naveen Kumar Elumalai, Leung Man Yin, Vijila Chellappan, Zhang Jie, Zhu Peining and Seeram Ramakrishna

      Article first published online: 21 MAY 2012 | DOI: 10.1002/pssa.201228082

  9. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Advanced Materials Physics
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Information for authors (pages 1598–1599)

      Article first published online: 10 AUG 2012 | DOI: 10.1002/pssa.201221929

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