physica status solidi (a)

Cover image for physica status solidi (a)

January 2013

Volume 210, Issue 1

Pages 1–231

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
    1. You have free access to this content
      Front Cover: Doping of organic semiconductors (Phys. Status Solidi A 1/2013)

      B. Lüssem, M. Riede and K. Leo

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssa.201390000

      Thumbnail image of graphical abstract

      The cover shows a schematic visualisation of the doping process in organic semiconductors. A matrix of the hole transport material MeO-TPD (black) is p-doped using the strong electron acceptor F4-TCNQ (orange). The background shows a pile of substrates with organic light emitting diodes (OLEDs) that are based on the concept of molecular doping. In their Review Article on pp. 9–43, B. Lüssem, M. Riede, and K. Leo discuss recent work on both fundamental principles and applications of doping, focused primarily on doping of evaporated organic layers with molecular dopants in OLEDs and organic solar cells. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
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      Back Cover: Low-thermal-conductivity group 13 chalcogenides as high-efficiency thermoelectric materials (Phys. Status Solidi A 1/2013)

      Ken Kurosaki and Shinsuke Yamanaka

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssa.201390001

      Thumbnail image of graphical abstract

      The low efficiency of thermoelectric (TE) materials in converting heat to electricity is the main impediment to applying TE generators in many industries. To enhance the efficiency of TE materials, quantified by the figure of merit ZT, it is important to reduce the lattice thermal conductivity of a material while maintaining a high electrical conductivity. In their Feature Article on pp. 82–88, Kurosaki and Yamanaka review the TE properties of chalcogenides containing elements from group 13, particularly compounds with crystal structures derived from the diamond structure, such as the zinc-blende and the chalcopyrite structures. As shown on the cover, Ga2Se3 with point vacancies clearly has a higher thermal conductivity than Ga2Se3 with in-plane vacancies. The presence of vacancies alone does not result in effective phonon scattering; rather, vacancies should form an in-plane defect structure to realize effective phonon scattering. Introducing structural vacancies with in-plane defect structures is a promising new method for reducing the thermal conductivity of thermoelectric materials and increasing the figure of merit ZT.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
    1. You have free access to this content
      Issue Information

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssa.201390002

  4. Editorial

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
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      NEWS from pss in 2013 (pages 1–2)

      Sabine Bahrs, Ingeborg Stass and Stefan Hildebrandt

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssa.201322701

  5. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
    1. You have free access to this content
  6. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
    1. You have free access to this content
  7. Review Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
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      Doping of organic semiconductors (pages 9–43)

      B. Lüssem, M. Riede and K. Leo

      Version of Record online: 20 DEC 2012 | DOI: 10.1002/pssa.201228310

      Thumbnail image of graphical abstract

      Molecular doping of organic semiconductors has become the key enabling technology for highly efficient and long-living organic light emitting diodes (OLEDs) and made them commercially viable. Other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Again, molecular doping offers many advantages here. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review discusses recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants.

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      Device efficiency of organic light-emitting diodes: Progress by improved light outcoupling (pages 44–65)

      Wolfgang Brütting, Jörg Frischeisen, Tobias D. Schmidt, Bert J. Scholz and Christian Mayr

      Version of Record online: 24 SEP 2012 | DOI: 10.1002/pssa.201228320

      Thumbnail image of graphical abstract

      Organic light-emitting diodes (OLEDs) are efficient large-area light sources facing their market entry. Still, the enhancement of light outcoupling from the multi-layer thin film structures remains a major challenge. This Review Article introduces the working principles of OLEDs and gives an overview of ongoing efforts to improve their efficiency, in particular by extracting more light. As an example, the photograph shows a white OLED where light emission from trapped modes is enabled by a high-index prism.

  8. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
    1. Advances in Thermoelectric Materials

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      Advances in Thermoelectric Materials (pages 67–68)

      Christian Heiliger and Bruno K. Meyer

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssa.201322704

  9. Feature Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
    1. Advances in Thermoelectric Materials

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      From oxides to selenides and sulfides: The richness of the CdI2 type crystallographic structure for thermoelectric properties (pages 69–81)

      S. Hébert, W. Kobayashi, H. Muguerra, Y. Bréard, N. Raghavendra, F. Gascoin, E. Guilmeau and A. Maignan

      Version of Record online: 18 DEC 2012 | DOI: 10.1002/pssa.201228505

      Thumbnail image of graphical abstract

      The CdI2 type crystallographic structure is a very rich family in which oxides and non-oxide materials can be synthesized. For oxides, NaxCoO2 has already been found to be a promising p-type thermoelectric material. The aim of this Feature Article is first to analyze the thermoelectric properties of misfit cobalt oxides, showing the relationship between this layered structure which stabilizes Co3+ and Co4+ in low spin states, and transport properties. By changing the separating block layer, or by modifying oxides into selenides or sulfides, it is possible to strongly modify the transport properties. The second part of this Feature Article reports the interesting thermoelectric properties of sulfides and selenides, with ZT up to 0.5 at 800 K, and shows the differences between these properties and that of oxides.

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      Low-thermal-conductivity group 13 chalcogenides as high-efficiency thermoelectric materials (pages 82–88)

      Ken Kurosaki and Shinsuke Yamanaka

      Version of Record online: 5 DEC 2012 | DOI: 10.1002/pssa.201228680

      Thumbnail image of graphical abstract

      Chalcogenides containing elements from group 13 have attracted attention as thermoelectric materials, particularly compounds with crystal structures derived from the diamond structure, such as the zinc-blende structure and the chalcopyrite structure. Specifically, a series of compounds that include CuGaTe2, CuInTe2, and AgGaTe2 has been found to exhibit high thermoelectric figure of merit (ZT) values at high temperatures. These chalcogenides are expected to attract increasing attention as novel thermoelectric materials in the future and to be the subject of much research aiming to determine the mechanism responsible for the high ZT and to further enhance the performance.

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      Probing thermopower on the microscale (pages 89–105)

      Pawel Ziolkowski, Gabriele Karpinski, Titas Dasgupta and Eckhard Müller

      Version of Record online: 21 NOV 2012 | DOI: 10.1002/pssa.201228512

      Thumbnail image of graphical abstract

      Homogeneity analyses of thermoelectric (TE) semiconductors mainly require the determination of thermopower distribution, which provides meaningful information on the phase distribution and a benchmark on materials performance and repeatability of materials preparation. Insights into material structures and compositional distribution are not only necessary for investigations on high performance TE materials but are a fundamental pre-condition for the development of standard reference materials for thermopower. The high demand on their functional homogeneity disqualifies the use of high purity elements in most cases, as can be seen from the thermopower distribution of a germanium sample, since smallest impurities are frequently linked to a massive impact on thermopower due to its strong dependence on carrier concentration and structural variations.

  10. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
    1. Advances in Thermoelectric Materials

    2. Effects of interface geometry on the thermoelectric properties of laterally microstructured ZnO-based thin films (pages 119–124)

      G. Homm, F. Gather, A. Kronenberger, S. Petznick, T. Henning, M. Eickhoff, B. K. Meyer, C. Heiliger and P. J. Klar

      Version of Record online: 12 DEC 2012 | DOI: 10.1002/pssa.201228463

    3. Coherent phonon scattering in ZnO and ZnS at sulfite and oxygen impurities (pages 125–130)

      M. Bachmann, M. Czerner and C. Heiliger

      Version of Record online: 20 SEP 2012 | DOI: 10.1002/pssa.201228429

    4. Influence of the substrate thermal expansion coefficient on the morphology and elastic stress of CoSb3 thin films (pages 140–146)

      M. Daniel, M. Friedemann, N. Jöhrmann, A. Liebig, J. Donges, M. Hietschold, G. Beddies and M. Albrecht

      Version of Record online: 22 OCT 2012 | DOI: 10.1002/pssa.201228388

    5. (GeTe)x–(Sb2Te3)1–x phase-change thin films as potential thermoelectric materials (pages 147–152)

      Ernst-Roland Sittner, Karl Simon Siegert, Peter Jost, Carl Schlockermann, Felix Rolf Lutz Lange and Matthias Wuttig

      Version of Record online: 26 SEP 2012 | DOI: 10.1002/pssa.201228397

    6. Morphology, thermoelectric properties and wet-chemical doping of laser-sintered germanium nanoparticles (pages 153–160)

      Benedikt Stoib, Tim Langmann, Nils Petermann, Sonja Matich, Matthias Sachsenhauser, Hartmut Wiggers, Martin Stutzmann and Martin S. Brandt

      Version of Record online: 1 NOV 2012 | DOI: 10.1002/pssa.201228392

    7. Thermal conductance of nanosize semiconductor pillars (pages 161–167)

      Thorben Bartsch, Alina Wetzel, David Sonnenberg, Matthias Schmidt, Christian Heyn and Wolfgang Hansen

      Version of Record online: 1 NOV 2012 | DOI: 10.1002/pssa.201228400

    8. Extended Defects in Semiconductors

    9. The role of extended defects in device degradation (pages 175–180)

      Sokrates T. Pantelides

      Version of Record online: 4 DEC 2012 | DOI: 10.1002/pssa.201200567

    10. The Stranski–Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy (pages 187–190)

      Thomas Walther, David J. Norris, Yang Qiu, Andrew Dobbie, Maksym Myronov and David R. Leadley

      Version of Record online: 22 NOV 2012 | DOI: 10.1002/pssa.201200363

    11. TEM observations of dislocations in plastically deformed diamond (pages 191–194)

      A. Mussi, D. Eyidi, A. Shiryaev and J. Rabier

      Version of Record online: 26 NOV 2012 | DOI: 10.1002/pssa.201200483

    12. Properties of trench defects in InGaN/GaN quantum well structures (pages 195–198)

      S.-L. Sahonta, M. J. Kappers, D. Zhu, T. J. Puchtler, T. Zhu, S. E. Bennett, C. J. Humphreys and R. A. Oliver

      Version of Record online: 21 NOV 2012 | DOI: 10.1002/pssa.201200408

    13. Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire (pages 199–203)

      G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas and Ph. Komninou

      Version of Record online: 21 NOV 2012 | DOI: 10.1002/pssa.201200552

    14. Spinodal decomposition and the luminescence of Er in AlxIn1−xN:Er layers (pages 209–212)

      Miao Yang, Ye Weng and Horst P. Strunk

      Version of Record online: 29 NOV 2012 | DOI: 10.1002/pssa.201200410

    15. Influence of defect characteristics on the nanoindentation response of a-plane GaN thin films (pages 213–217)

      P. Kavouras, A. Lotsari, Th. Kehagias, A. Georgakilas, Ph. Komninou and G. P. Dimitrakopoulos

      Version of Record online: 21 NOV 2012 | DOI: 10.1002/pssa.201200542

    16. Damage accumulation in He implanted SiC at different temperatures (pages 218–221)

      Jean François Barbot, Alain Declémy and Marie-France Beaufort

      Version of Record online: 19 NOV 2012 | DOI: 10.1002/pssa.201200364

    17. Combined Raman-DLTS investigations of n-type Cu–In–S absorber layers grown on Cu tape substrate (CISCuT) (pages 222–225)

      M. Trushin, T. Arguirov, M. Kittler, W. Seifert, A. Klossek, T. Bernhard, W. Gerlach-Blumenthal, A. Hänsel, O. Tober and M. Schwabe

      Version of Record online: 22 NOV 2012 | DOI: 10.1002/pssa.201200391

    18. Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution (pages 226–229)

      M. Zervos, A. Othonos, D. Tsokkou, J. Kioseoglou, E. Pavlidou and P. Komninou

      Version of Record online: 18 DEC 2012 | DOI: 10.1002/pssa.201200403

  11. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Articles
    9. Preface
    10. Feature Articles
    11. Original Papers
    12. Information for authors
    1. You have free access to this content
      Information for authors (pages 230–231)

      Version of Record online: 15 JAN 2013 | DOI: 10.1002/pssa.201322705

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