The resistance switching (RS) phenomenon found in several materials has recently attracted considerable attention due to its application in nonvolatile memories such as resistance random access memory (RRAM) and so-called memristor devices. Origin of this switching is transformation from a non-conducting to a metallic state, i.e. from the low- to the high-conducting state, induced by an external electric field. The RS phenomenon has been observed in many oxides. Among them are ferroelectrics of the perovskite structure that show the technologically interesting ability to store information. However, until now the RS effect has not been investigated in antiferroelectric crystals. In the article by Jankowska-Sumara et al. (pp. 507–512) such effect for the first time was observed in - treated as a classic antiferroelectric - lead zirconate PbZrO3 single crystal. This can be very important for new practical applications, because many well-known solid solutions as PZT, PLZT, and PZS are based on PbZrO3. Hence, it is supposed that the RS in antiferroelectric materials will create possibilities to build next-generation RRAM.