physica status solidi (a)

Cover image for Vol. 210 Issue 3

March 2013

Volume 210, Issue 3

Pages 433–624

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
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      Front Cover: Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation (Phys. Status Solidi A 3/20123)

      Mickaël Lozac'h, Yoshitaka Nakano, Liwen Sang, Kazuaki Sakoda and Masatomo Sumiya

      Version of Record online: 6 MAR 2013 | DOI: 10.1002/pssa.201390006

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      The analysis of deep level defects of III-V nitrides (such as GaN or InxGa1-xN) is critical for the improvement of solar cell properties using these materials as an active layer. Schottky junctions are often used for the detection of level defects by deep level transient spectroscopy or deep level optical spectroscopy. Masatomo Sumiya and coworkers (pp. 470–473) have fabricated a transparent conducting polymer / GaN Schottky junction by using spin coating technique. The Schottky properties exhibited an ideal factor of 1.3, a Schttoky barrier height of 1.15 eV and a leakage current at -10 V of ∼10-6 mA/cm2, which was much better than that of a normal Schottky junction using a high workfunction metal like Au. Under irradiation of an AM1.5G solar simulator, the device performed an open circuit voltage of 0.72 V with a high fill factor of 0.71. Utilizing the features of transparency and good Schottky properties, the depletion layer in GaN at the interface beneath the conducting polymer was evaluated under light irradiation in order to detect the defects located in the GaN band-gap which must give an influence on the photovoltaic properties. This technique can be applied also to InGaN films with lower band-gap, even more suitable as photovoltaic material of III-V nitride film.

  2. Back Cover

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    6. Recent and forthcoming publications in pss
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    10. Original Papers
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      Back Cover: Effect of resistive switching and electrically driven insulator–conductor transition in PbZrO3 single crystals (Phys. Status Solidi A 3/2013)

      Irena Jankowska-Sumara, Krzysztof Szot, Andrzej Majchrowski and Krystian Roleder

      Version of Record online: 6 MAR 2013 | DOI: 10.1002/pssa.201390007

      Thumbnail image of graphical abstract

      The resistance switching (RS) phenomenon found in several materials has recently attracted considerable attention due to its application in nonvolatile memories such as resistance random access memory (RRAM) and so-called memristor devices. Origin of this switching is transformation from a non-conducting to a metallic state, i.e. from the low- to the high-conducting state, induced by an external electric field. The RS phenomenon has been observed in many oxides. Among them are ferroelectrics of the perovskite structure that show the technologically interesting ability to store information. However, until now the RS effect has not been investigated in antiferroelectric crystals. In the article by Jankowska-Sumara et al. (pp. 507–512) such effect for the first time was observed in - treated as a classic antiferroelectric - lead zirconate PbZrO3 single crystal. This can be very important for new practical applications, because many well-known solid solutions as PZT, PLZT, and PZS are based on PbZrO3. Hence, it is supposed that the RS in antiferroelectric materials will create possibilities to build next-generation RRAM.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Issue Information

      Version of Record online: 6 MAR 2013 | DOI: 10.1002/pssa.201390008

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
  6. Feature Article

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    5. Contents
    6. Recent and forthcoming publications in pss
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    1. Topical section: Growth of III-nitrides

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      Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers (pages 439–450)

      V. N. Jmerik, E. V. Lutsenko and S. V. Ivanov

      Version of Record online: 1 MAR 2013 | DOI: 10.1002/pssa.201300006

      Thumbnail image of graphical abstract

      Plasma-assisted molecular beam epitaxy of AlxGa1 − xN-based quantum well (QW) structures with high Al content (up to 50% in the QW) grown directly on c-sapphire is described in this Feature Article. Special attention is paid to the growth conditions of (i) AlN nucleation layers with suppressed generation of threading dislocations (TDs), (ii) atomically-smooth 2-μm-thick AlN buffer layers with several 3-nm-thick strained GaN insertions and AlGaN/AlN superlattice to decrease TD's density down to 108–109cm−2, (iii) cladding and waveguide AlGaN layers with atomically-smooth droplet-free morphology and QW region fabricated by a sub-monolayer digital alloying technique. These QW structures demonstrate optically-pumped lasing within the deep-UV (sub-300 nm) wavelength range with threshold power density below 600 kW/cm2 (at 289 nm).

  7. Original Papers

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    4. Issue Information
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    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
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    1. Topical section: Growth of III-nitrides

      AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates (pages 451–454)

      A. Knauer, V. Kueller, U. Zeimer, M. Weyers, C. Reich and M. Kneissl

      Version of Record online: 18 DEC 2012 | DOI: 10.1002/pssa.201200648

    2. Cubic III-nitride coupled quantum wells towards unipolar optically pumped lasers (pages 455–458)

      C. Mietze, M. Bürger, S. Sakr, M. Tchernycheva, F. H. Julien and D. J. As

      Version of Record online: 25 JAN 2013 | DOI: 10.1002/pssa.201200476

    3. Development of semipolar laser diode (pages 459–465)

      Dmitry Sizov, Rajaram Bhat, Jie Wang, Donald Allen, Barry Paddock and Chung-en Zah

      Version of Record online: 31 JAN 2013 | DOI: 10.1002/pssa.201200629

    4. Lattice dynamics of short-period AlN/GaN superlattices: Theory and experiment (pages 484–487)

      V. Yu. Davydov, E. M. Roginskii, A. N. Smirnov, Yu. E. Kitaev, M. A. Yagovkina, R. N. Kyutt, M. M. Rozhavskaya, E. E. Zavarin, W. V. Lundin and M. B. Smirnov

      Version of Record online: 31 JAN 2013 | DOI: 10.1002/pssa.201200700

  8. Editor's Choice

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. Regular contributions

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      Improved efficiency of blue phosphorescence organic light-emitting diodes with irregular stepwise-doping emitting layers (pages 489–493)

      Jun Liu, Jing Wang, Saijun Huang, Hsi-An Chen and Gufeng He

      Version of Record online: 11 JAN 2013 | DOI: 10.1002/pssa.201228727

      Thumbnail image of graphical abstract

      A stepwise doping emitting layer is considered as an effective way to control the charge transport and recombination in organic light-emitting diodes (OLEDs). It has been demonstrated that the irregular stepwise doping profile in the emitting layer can deliver better charge carrier balance and tune the recombination zone away from the low triplet energy electron transporting layer to avoid possible quenching. Both effects improve the efficiency significantly. It is anticipated that this method can also be applied to other emitting systems to realize better performance.

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. Regular contributions

    2. Influence of substrate planar defects on MOVPE GaN layer growth (pages 503–506)

      Grzegorz Kamler, Julita Smalc-Koziorowska, Grzegorz Nowak, Izabella Grzegory and Marcin T. Klepka

      Version of Record online: 17 DEC 2012 | DOI: 10.1002/pssa.201228654

    3. Elastic properties of boron carbide films via surface acoustic waves measured by Brillouin light scattering (pages 513–518)

      E. Salas, F. Jiménez-Villacorta, J. Sánchez-Marcos, R. J. Jiménez Riobóo, A. Muñoz-Martín, J. E. Prieto, V. Joco and C. Prieto

      Version of Record online: 11 DEC 2012 | DOI: 10.1002/pssa.201228461

    4. Reduction of residual stress in SiO2-matrix silicon nano-crystal thin films by a combination of rapid thermal annealing and tube-furnace annealing (pages 528–532)

      Junjun Huang, Yuheng Zeng, Weiyan Wang, Ye Yang, Jinhua Huang, Ruiqin Tan, Shixun Dai, Ning Dai and Weijie Song

      Version of Record online: 10 DEC 2012 | DOI: 10.1002/pssa.201228476

    5. Synthesis and characterization of sol–gel derived Ba0.85Ca0.15Ti0.9Zr0.1O3xCuO ceramics (pages 533–537)

      Jun Li, Xiaojian Sun, XiaoShan Zhang, Qiang Chen, ZhiHang Peng and Ping Yu

      Version of Record online: 10 DEC 2012 | DOI: 10.1002/pssa.201228565

    6. Interactions between components of SrTi0.98Nb0.02O3−δ–YSZ and SrTi0.98Nb0.02O3−δ–CeO2 composites (pages 538–545)

      Beata Bochentyn, Jakub Karczewski, Maria Gazda, Piotr Jasiński and Bogusław Kusz

      Version of Record online: 12 DEC 2012 | DOI: 10.1002/pssa.201228380

    7. Cu2MnAl thin films grown onto sapphire and MgO substrates: Exchange stiffness and magnetic anisotropy (pages 553–558)

      M. Belmeguenai, H. Tuzcuoglu, S. M. Chérif, K. Westerholt, T. Chauveau, F. Mazaleyrat and P. Moch

      Version of Record online: 12 DEC 2012 | DOI: 10.1002/pssa.201228187

    8. Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells (pages 559–562)

      Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang and Jinmin Li

      Version of Record online: 17 DEC 2012 | DOI: 10.1002/pssa.201228777

    9. Synthesis of phase-controlled iron oxide nanoparticles by pulsed laser ablation in different liquid media (pages 563–569)

      Prachuporn Maneeratanasarn, Tran Van Khai, So Yeon Kim, Bong Geun Choi and Kwang Bo Shim

      Version of Record online: 18 DEC 2012 | DOI: 10.1002/pssa.201228427

    10. Effect of temperature on the electrical properties of ITO in a TiO2/ITO film (pages 589–593)

      Naoki Nishimoto, Yasuji Yamada, Yosuke Ohnishi, Naoto Imawaka and Katsumi Yoshino

      Version of Record online: 11 JAN 2013 | DOI: 10.1002/pssa.201228325

    11. Optical and electrical characterization of transparent conductive Gd-doped AZO thin films (pages 600–606)

      Yen-Shuo Liu, Yung-Shun Lin, Yu-Shan Wei, Chia-Ying Wei, Po-Ming Lee and Cheng-Yi Liu

      Version of Record online: 16 JAN 2013 | DOI: 10.1002/pssa.201228488

  10. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Feature Article
    8. Original Papers
    9. Editor's Choice
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Information for authors (pages 623–624)

      Version of Record online: 6 MAR 2013 | DOI: 10.1002/pssa.201322711

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