physica status solidi (a)

Cover image for Vol. 210 Issue 9

September 2013

Volume 210, Issue 9

Pages 1665–1951

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      A micro-electro-mechanical memory based on the structural phase transition of VO2 (Phys. Status Solidi A 9∕2013)

      Rafmag Cabrera, Emmanuelle Merced and Nelson Sepúlveda

      Version of Record online: 14 SEP 2013 | DOI: 10.1002/pssa.201370054

      Thumbnail image of graphical abstract

      The structural phase transition in vanadium dioxide and its inherent hysteretic behavior are used in the work by Cabrera et al. (pp. 1704–1711) to program multiple mechanical states in a micrometer-sized structure through electrical pulses. The background image on the cover shows one of the lithography masks used for the fabrication of the device. In the top-left 3D scheme of the micro-actuator a two-end arrow at the tip emphasizes the fact that bi-directional mechanical states were programmed. The gray part of the actuator represents the metal traces used for Joule heating, and the cantilever made of SiO2 (glass) is shown as transparent. The bottom plots are a graphical representation of the mechanical states (deflection) that can be programmed with the electrical pulses (voltage). Two horizontal rectangles in the deflection graph represent the windows for programming an “on-state” and an “off-state”. Finally, the monoclinic and tetragonal lattice diagrams emphasize that the phenomena that allow for the mechanical states to be programmed are the crystallographic changes in the VO2 thin film that occur across the phase transition and are completely reversible.

  2. Inside Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. Cross-sectional TEM imaging of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrates (Phys. Status Solidi A 9∕2013)

      Shinji Nakagomi and Yoshihiro Kokubun

      Version of Record online: 14 SEP 2013 | DOI: 10.1002/pssa.201370055

      Thumbnail image of graphical abstract

      Nakagomi and Kokubun (pp. 1738–1744) investigated the micro-structure of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrates prepared by gallium evaporation in an oxygen plasma. Cross-sectional transmission electron microscopy (TEM) images and electron diffraction patterns were obtained from a cross section of β-Ga2O3 on a sapphire substrate. The results indicate that TEM images and electron diffraction patterns can be classified into four types according to the rotation angle of the unit cell of (-201)-oriented β-Ga2O3. The authors explain the reason for the appearance of the four types of cross sectional TEM image using crystal orientation. The classification was summarized in a table that is expected to be useful for further studies on β-Ga2O3.

  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Cuprous iodide – a p-type transparent semiconductor: history and novel applications (Phys. Status Solidi A 9∕2013)

      Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner and Holger von Wenckstern

      Version of Record online: 14 SEP 2013 | DOI: 10.1002/pssa.201370056

      Thumbnail image of graphical abstract

      Cuprous iodide has been investigated since 1907 when Karl Bädeker prepared this material from metallic copper thin films with subsequent iodization and reported it as fully transparent conductor. Nowadays CuI is recognized as p-type wide bandgap, transparent semiconductor, offering rather high hole mobilities of so far up to 10 Vs∕cm2 in thin films. The charge carrier density is primarily controlled via the amount of copper vacancies. CuI has been prepared as bulk material and substrate and thin film as well as in the form of various nanostructures. Thin films can be prepared by various techniques including iodization of copper and by thermal evaporation, sputtering or pulsed laser deposition of CuI. Recent progress is represented by the epitaxy on other semiconductors, in particular zinc oxide. CuI has found use as intermediate layer between ITO and organic absorbers in solar cells. Recently, bipolar heterostructure diodes prepared from p-CuI∕n-ZnO layers on sapphire were found to exhibit very high rectification. This makes CuI interesting for use in transparent electronics. For further details see the Review Article by M. Grundmann et al. on pp. 1671–1703.

  4. Issue Information

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Issue Information

      Version of Record online: 14 SEP 2013 | DOI: 10.1002/pssa.201370057

  5. Contents

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Contents (pages 1665–1669)

      Version of Record online: 14 SEP 2013 | DOI: 10.1002/pssa.201370058

  6. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
  7. Review Article

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. Cuprous iodide – a p-type transparent semiconductor: history and novel applications (pages 1671–1703)

      Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner and Holger von Wenckstern

      Version of Record online: 12 AUG 2013 | DOI: 10.1002/pssa.201329349

      Thumbnail image of graphical abstract

      Cuprous iodide is a p-type wide bandgap semiconductor that has been identified as transparent semiconductor 1907 by K. Bädeker in Leipzig. The literature on CuI and the semiconducting properties of CuI are reviewed. It is found that CuI can grow epitaxially on (00.1)-oriented ZnO. With n-type ZnO thin films CuI forms transparent bipolar diodes with high rectification.

  8. Advanced Materials Physics

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      A micro-electro-mechanical memory based on the structural phase transition of VO2 (pages 1704–1711)

      Rafmag Cabrera, Emmanuelle Merced and Nelson Sepúlveda

      Version of Record online: 29 AUG 2013 | DOI: 10.1002/pssa.201330021

      Thumbnail image of graphical abstract

      A MEMS memory cell is demonstrated, where mechanical states were programmed solely by electric signals. The fundamental operation of the device is based on the structural phase transition of vanadium dioxide thin films and a control system was implemented to make the system very robust to background fluctuating temperatures.

  9. Original Papers

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. Reduced Coulomb interaction in organic solar cells by the introduction of inorganic high-k nanostructured materials (pages 1712–1718)

      Miriam Engel, David Schaefer, Daniel Erni, Niels Benson and Roland Schmechel

      Version of Record online: 24 APR 2013 | DOI: 10.1002/pssa.201228771

    2. Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate (pages 1719–1725)

      Masashi Kato, Atsushi Yoshida, Masaya Ichimura and Hiroyuki Nagasawa

      Version of Record online: 14 JUN 2013 | DOI: 10.1002/pssa.201329015

    3. Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors (pages 1745–1749)

      Jeong-Soo Lee, Seung-Min Song, Yong-Hoon Kim, Jang-Yeon Kwon and Min-Koo Han

      Version of Record online: 2 MAY 2013 | DOI: 10.1002/pssa.201329170

    4. Effects of copper precipitates on microdefects in deformed Fe–1.5 wt%Cu alloy (pages 1758–1761)

      Haibiao Wu, Xingzhong Cao, Guodong Cheng, Jianping Wu, Jing Yang, Peng Zhang, Zhuoxin Li, Abu Zayed Mohammad Saliqur Rahman, Runsheng Yu and Baoyi Wang

      Version of Record online: 13 MAY 2013 | DOI: 10.1002/pssa.201228849

    5. Electrical characterization of liquid-phase-deposited SiON on (NH4)2S-treated GaAs (pages 1762–1767)

      Chih-Feng Yen, Jung-Chan Lee, Chi-Hsuan Cheng and Ming-Kwei Lee

      Version of Record online: 13 MAY 2013 | DOI: 10.1002/pssa.201228592

    6. Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate (pages 1768–1770)

      Zachary Lochner, Xiao-Hang Li, Tsung-Ting Kao, Md. Mahbub Satter, Hee Jin Kim, Shyh-Chiang Shen, P. Douglas Yoder, Jae-Hyun Ryou, Russell D. Dupuis, Kewei Sun, Yong Wei, Ti Li, Alec Fischer and Fernando A. Ponce

      Version of Record online: 21 MAY 2013 | DOI: 10.1002/pssa.201329013

    7. Scaling of extended defects in nano-sized Brownmillerite CaFeO2.5 (pages 1771–1777)

      Kapil Gupta, Shubra Singh, Monica Ceretti, M.S. Ramachandra Rao and Werner Paulus

      Version of Record online: 29 MAY 2013 | DOI: 10.1002/pssa.201329027

    8. Effect of La3+ incorporation on the spectroscopic properties of Yb3+-doped Y1−xLaxCa4O(BO3)3 (x = 0.09 and 0.25) crystals (pages 1778–1784)

      Qing-hua Zheng, Wei-wei Zhou, Bo Wei, Hai-yan Liu, Yue Tong, Zhou-bin Lin, Guo-fu Wang and Wang Zhao

      Version of Record online: 25 JUN 2013 | DOI: 10.1002/pssa.201329104

    9. The red luminescence of Sr4Al14O25:Mn4+ enhanced by coupling with the SrAl2O4 phase in the 3SrO · 5Al2O3 system (pages 1791–1796)

      Lei Chen, Yao Zhang, Fayong Liu, Wenhua Zhang, Xiaorong Deng, Shaochan Xue, Anqi Luo, Yang Jiang and Shifu Chen

      Version of Record online: 24 MAY 2013 | DOI: 10.1002/pssa.201329108

    10. Resistive switching in natural silk fibroin protein-based bio-memristors (pages 1797–1805)

      C. Mukherjee, M. K. Hota, D. Naskar, S. C. Kundu and C. K. Maiti

      Version of Record online: 22 MAY 2013 | DOI: 10.1002/pssa.201329109

    11. Vertically oriented few-layer graphene as an electron field-emitter (pages 1817–1821)

      Sanjay K. Behura, Indrajit Mukhopadhyay, Akira Hirose, Qiaoqin Yang and Omkar Jani

      Version of Record online: 30 MAY 2013 | DOI: 10.1002/pssa.201329172

    12. Forming-free SiN-based resistive switching memory prepared by RF sputtering (pages 1822–1827)

      Hee-Dong Kim, Ho-Myoung An, Seok Man Hong and Tae Geun Kim

      Version of Record online: 3 JUN 2013 | DOI: 10.1002/pssa.201329021

    13. Electrospinning synthesis and photoluminescence properties of one-dimensional LuBO3:Ln3+ (Ln = Tb, Eu) nanofibers (pages 1839–1845)

      Hongzhi Shen, Runru Liu, Min Yang, Jing Zhou, Yipeng Gu, Hang Yang, Wenquan Wang and Dapeng Xu

      Version of Record online: 3 JUN 2013 | DOI: 10.1002/pssa.201329139

    14. Single-step fabrication of all-solid dye-sensitized solar cells using solution-processable precursor (pages 1846–1850)

      Sandeep K. Das, Daiki Yamashita, Yuhei Ogomi, Shyam S. Pandey, Kenji Yoshino and Shuzi Hayase

      Version of Record online: 5 JUN 2013 | DOI: 10.1002/pssa.201329076

    15. Carbon fiber as a flexible quasi-ohmic contact to cadmium sulfide micro- and nanocrystals (pages 1851–1855)

      P. S. Smertenko, D. A. Grynko, N. M. Osipyonok, O. P. Dimitriev and A. A. Pud

      Version of Record online: 5 JUN 2013 | DOI: 10.1002/pssa.201228805

    16. Evidence of new magnetic ordering at high temperatures in Pb-based multiferroics perovskites (pages 1856–1860)

      Barbara Fraygola, William J. Nascimento, Adelino A. Coelho, Ducinei Garcia and Jose A. Eiras

      Version of Record online: 14 JUN 2013 | DOI: 10.1002/pssa.201329011

    17. Fabrication and UV-sensing properties of one-dimensional β-Ga2O3 nanomaterials (pages 1861–1865)

      Haifeng Feng, Weichang Hao, Changzheng Zhao, Xiandong Xin, Jinyang Cheng, Yimin Cui, Yan Chen and Wenjun Wang

      Version of Record online: 14 JUN 2013 | DOI: 10.1002/pssa.201329318

    18. Synthesis and luminescence of Eu3+-activated molybdates with scheelite-type structure (pages 1866–1870)

      Xinmin Zhang, Fangui Meng, Huan Li and Hyo Jin Seo

      Version of Record online: 14 JUN 2013 | DOI: 10.1002/pssa.201329071

    19. Al+-doping of Si by laser ablation of Al2O3/SiN passivation (pages 1871–1873)

      Nils-Peter Harder, Yevgeniya Larionova and Rolf Brendel

      Version of Record online: 14 JUN 2013 | DOI: 10.1002/pssa.201329058

    20. Effect of step biasing on diamond-like carbon films deposited by pulsed unbalanced magnetron sputtering (pages 1874–1880)

      Haiyang Dai, Zhenping Chen, Renzhong Xue, Tao Li and Yuncai Xue

      Version of Record online: 14 JUN 2013 | DOI: 10.1002/pssa.201329110

    21. 1-3 ceramic/polymer composites for high-temperature transducer applications (pages 1888–1891)

      Lili Li, Shujun Zhang, Zhuo Xu, Xuecang Geng and Thomas R. Shrout

      Version of Record online: 18 JUN 2013 | DOI: 10.1002/pssa.201228787

    22. Effect of antisite defects on the magnetic properties of ZnFe2O4 (pages 1892–1897)

      A. Šutka, R. Pärna, M. Zamovskis, V. Kisand, G. Mezinskis, J. Kleperis, M. Maiorov and D. Jakovlev

      Version of Record online: 21 JUN 2013 | DOI: 10.1002/pssa.201329039

    23. Synthesis and optical properties of InP quantum dot/nanowire heterostructures (pages 1898–1902)

      Pinyun Ren, Jinyou Xu, Yicheng Wang, Xiujuan Zhuang, Qinglin Zhang, Hong Zhou, Qiang Wan, Zhengping Shan, Xiaoli Zhu and Anlian Pan

      Version of Record online: 21 JUN 2013 | DOI: 10.1002/pssa.201329060

    24. Influence of lutetium content on the scintillation properties in (LuxY1−x)AlO3:Ce single crystals (pages 1903–1908)

      W. Chewpraditkul, A. Phunpueok, T. Szczesniak, M. Moszynski, V. Babin and M. Nikl

      Version of Record online: 21 JUN 2013 | DOI: 10.1002/pssa.201329159

    25. A solution synthetic route toward Bi2Se3 layered nanostructures with tunable thickness via weakening precursor reactivity (pages 1909–1913)

      Tiaoxing Wei, Yun Zhang, Wenjing Dong, Chanyan Huang, Yan Sun, Xin Chen and Ning Dai

      Version of Record online: 21 JUN 2013 | DOI: 10.1002/pssa.201329183

    26. Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope (pages 1914–1919)

      Farhad Larki, Arash Dehzangi, E. B. Saion, Alam Abedini, Sabar D. Hutagalung, A. Makarimi Abdullah and M. N. Hamidon

      Version of Record online: 24 JUN 2013 | DOI: 10.1002/pssa.201228775

    27. Hydrogen adsorption on high surface area Cr2O3 materials (pages 1920–1924)

      Jinglian Fan, Yongxiang Cheng, Zunyun Xie, Lingyun Jin, Gengshen Hu, Jiqing Lu, Mengfei Luo and Yuejuan Wang

      Version of Record online: 24 JUN 2013 | DOI: 10.1002/pssa.201329229

    28. Casimir torque between birefringent plates with metamaterials (pages 1925–1932)

      Xiang Chen and John C. H. Spence

      Version of Record online: 26 JUN 2013 | DOI: 10.1002/pssa.201329144

    29. Luminomagnetic K2Gd1−xZr(PO4)3:Tbx3+ phosphor with intense green fluorescence and paramagnetism (pages 1933–1937)

      Raj Kumar, Ravi Shanker, Ravinder Kumar Kotnala and Santa Chawla

      Version of Record online: 1 JUL 2013 | DOI: 10.1002/pssa.201329087

    30. Short-carbon-fiber reinforced alumina ceramic with improved mechanical property and dielectric property in the Ku-band (pages 1944–1949)

      Shanshan Huang, Wancheng Zhou, Ping Wei, Fa Luo, Dongmei Zhu and Kewei Sun

      Version of Record online: 5 JUL 2013 | DOI: 10.1002/pssa.201329258

  10. Information for authors

    1. Top of page
    2. Cover Picture
    3. Inside Back Cover
    4. Back Cover
    5. Issue Information
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Review Article
    9. Advanced Materials Physics
    10. Original Papers
    11. Information for authors
    1. You have free access to this content
      Information for authors (pages 1950–1951)

      Version of Record online: 14 SEP 2013 | DOI: 10.1002/pssa.201370060

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