physica status solidi (a)

Cover image for Vol. 211 Issue 1

January 2014

Volume 211, Issue 1

Pages 1–240

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. You have free access to this content
      Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014)

      Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui and Shigenobu Yamakoshi

      Version of Record online: 21 JAN 2014 | DOI: 10.1002/pssa.201470201

      Thumbnail image of graphical abstract

      A promising wide bandgap alternative that has been overlooked up until now is gallium oxide (Ga2O3). Thanks to material properties related to its bandgap (4.7–4.9 eV) that is significantly larger than that of SiC and GaN, this oxide promises to enable the production of devices with higher breakdown voltages and higher efficiencies than those stemming from its wide bandgap rivals. What's more, Ga2O3 power devices could be manufactured at low cost in high volume, because it is possible to produce single-crystal native substrates from a melt using the same method employed for manufacturing sapphire substrates. Metal-semiconductor field-effect transistors (MESFETs) and Schottky barrier diodes (SBDs) fabricated on single-crystal Ga2O3 substrates have already demonstrated reasonably good device characteristics for considering high-performance power electronics application in the near future. For further details see the Invited Article by Higashiwaki et al. (pp. 21–26). The cover page shows schematic illustrations of the Ga2O3 MESFETs and SBDs, and a photograph of a 2’’-diameter Ga2O3 wafer, on a micrograph of a ring-pattern MESFET.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. You have free access to this content
      Individual heterojunctions of 3D germanium crystals on silicon CMOS for monolithically integrated X-ray detector (Phys. Status Solidi A 1∕2014)

      Thomas Kreiliger, Claudiu V. Falub, Alfonso G. Taboada, Fabio Isa, Stefano Cecchi, Rolf Kaufmann, Philippe Niedermann, Aurélie Pezous, Schahrazède Mouaziz, Alex Dommann, Giovanni Isella and Hans von Känel

      Version of Record online: 21 JAN 2014 | DOI: 10.1002/pssa.201470202

      Thumbnail image of graphical abstract

      Silicon is highly successful in today's electronics, but it provides only very limited potential for new functionalities, such as LED, lasers or radiation detectors. Integrating additional materials directly on the silicon chip would enable those features, but it remains a huge challenge due to material-related incompatibilities, such as lattice and thermal mismatches. A promising way to solve these issues has recently been presented as 3D heteroepitaxy, where arrays of tall, micrometer sized germanium crystals are grown on deeply patterned silicon substrates. Based on this technique, Kreiliger et al. (pp. 131–135) present a first version of a novel kind of X-ray detector, where a germanium absorber layer is directly grown on the silicon readout electronics. This approach is expected to improve spatial resolution and sensitivity compared to conventional detectors, while further reducing production costs. As a first proof of concept the authors present dark current measurements on individual Si/Ge heterojunctions, which were performed inside an SEM chamber using a micromanipulator to electrically contact single germanium crystals. The measurements show reverse dark current densities below 1 mA/cm2, which is suitable for detector fabrication.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. You have free access to this content
      Issue Information

      Version of Record online: 21 JAN 2014 | DOI: 10.1002/pssa.201470203

  4. Editorial

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. You have free access to this content
      Excellence – energy – ethics (pages 1–2)

      Stefan Hildebrandt and Sabine Bahrs

      Version of Record online: 21 JAN 2014 | DOI: 10.1002/pssa.201470204

  5. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. You have free access to this content
      Contents (pages 3–7)

      Version of Record online: 21 JAN 2014 | DOI: 10.1002/pssa.201470205

  6. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. You have free access to this content
  7. Advanced Materials Physics

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. You have free access to this content
      Towards high efficiency segmented thermoelectric unicouples (pages 9–17)

      Pham Hoang Ngan, Dennis Valbjørn Christensen, Gerald Jeffrey Snyder, Le Thanh Hung, Søren Linderoth, Ngo Van Nong and Nini Pryds

      Version of Record online: 20 NOV 2013 | DOI: 10.1002/pssa.201330155

      Thumbnail image of graphical abstract

      Thermoelectricity, a process of converting heat into electricity and vice versa, is important for its high potential for many applications. Both the conversion efficiency and working temperature range can be greatly improved by segmenting multiple materials. Here, we design high-efficient thermoelectric (TE) generators by segmenting today's state-of-the-art TE materials. Their efficiencies are calculated at temperature spans of up to 1100 K, and the criterion for selecting compatible materials for segmentation is given.

  8. Preface

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. Emerging Semiconducting Oxides

      You have free access to this content
      Emerging Semiconducting Oxides (pages 19–20)

      Oliver Bierwagen and Saskia F. Fischer

      Version of Record online: 21 JAN 2014 | DOI: 10.1002/pssa.201470207

  9. Invited Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. Emerging Semiconducting Oxides

      Development of gallium oxide power devices (pages 21–26)

      Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui and Shigenobu Yamakoshi

      Version of Record online: 13 NOV 2013 | DOI: 10.1002/pssa.201330197

  10. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. Emerging Semiconducting Oxides

      Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy (pages 27–33)

      Guenter Wagner, Michele Baldini, Daniela Gogova, Martin Schmidbauer, Robert Schewski, Martin Albrecht, Zbigniew Galazka, Detlef Klimm and Roberto Fornari

      Version of Record online: 1 OCT 2013 | DOI: 10.1002/pssa.201330092

    2. Control of the conductivity of Si-doped β-Ga2O3 thin films via growth temperature and pressure (pages 34–39)

      Stefan Müller, Holger von Wenckstern, Daniel Splith, Florian Schmidt and Marius Grundmann

      Version of Record online: 9 SEP 2013 | DOI: 10.1002/pssa.201330025

    3. Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition (pages 40–47)

      Daniel Splith, Stefan Müller, Florian Schmidt, Holger von Wenckstern, Johan Janse van Rensburg, Walter E. Meyer and Marius Grundmann

      Version of Record online: 18 NOV 2013 | DOI: 10.1002/pssa.201330088

    4. On the nature and temperature dependence of the fundamental band gap of In2O3 (pages 54–58)

      K. Irmscher, M. Naumann, M. Pietsch, Z. Galazka, R. Uecker, T. Schulz, R. Schewski, M. Albrecht and R. Fornari

      Version of Record online: 24 SEP 2013 | DOI: 10.1002/pssa.201330184

    5. In-gap states of In2O3 single crystals investigated by scanning tunneling spectroscopy (pages 59–65)

      Dorothee Braun, Valentina Scherer, Christoph Janowitz, Zbigniew Galazka, Roberto Fornari and Recardo Manzke

      Version of Record online: 28 OCT 2013 | DOI: 10.1002/pssa.201330089

    6. Growth, characterization, and properties of bulk SnO2 single crystals (pages 66–73)

      Zbigniew Galazka, Reinhard Uecker, Detlef Klimm, Klaus Irmscher, Mike Pietsch, Robert Schewski, Martin Albrecht, Albert Kwasniewski, Steffen Ganschow, Detlev Schulz, Christo Guguschev, Rainer Bertram, Matthias Bickermann and Roberto Fornari

      Version of Record online: 4 OCT 2013 | DOI: 10.1002/pssa.201330020

    7. Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry (pages 82–86)

      Martin Feneberg, Christian Lidig, Karsten Lange, Mark E. White, Min Y. Tsai, James S. Speck, Oliver Bierwagen and Rüdiger Goldhahn

      Version of Record online: 4 OCT 2013 | DOI: 10.1002/pssa.201330147

    8. Effect of heavy Ga doping on defect structure of SnO2 layers (pages 87–92)

      Anna Mogilatenko, Holm Kirmse, Oliver Bierwagen, Martin Schmidbauer, Min-Ying Tsai, Ines Häusler, Mark E. White and James S. Speck

      Version of Record online: 28 OCT 2013 | DOI: 10.1002/pssa.201330145

    9. Reactively magnetron sputtered Bi2O3 thin films: Analysis of structure, optoelectronic, interface, and photovoltaic properties (pages 93–100)

      Jan Morasch, Shunyi Li, Joachim Brötz, Wolfram Jaegermann and Andreas Klein

      Version of Record online: 12 NOV 2013 | DOI: 10.1002/pssa.201330216

  11. Feature Articles

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. Physics and Technology of Advanced Extra Functionality CMOS-based Devices

      Advanced CMOS devices: Challenges and implant solutions (pages 101–108)

      Benjamin Colombeau, Baonian Guo, Hans-Joachim Gossmann, Fareen Khaja, Nilay Pradhan, Andrew Waite, K. V. Rao, Christos Thomidis, Kyu-Ha Shim, Todd Henry and Naushad Variam

      Version of Record online: 13 DEC 2013 | DOI: 10.1002/pssa.201300169

    2. Defect engineering in germanium (pages 109–117)

      Hartmut Bracht

      Version of Record online: 4 DEC 2013 | DOI: 10.1002/pssa.201300151

  12. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. Doping and thermal processing: Basic studies and process optimisation

      Role of ion mass on damage accumulation during ion implantation in Ge (pages 118–121)

      E. Napolitani, E. Bruno, G. Bisognin, M. Mastromatteo, D. De Salvador, G. G. Scapellato, S. Boninelli, F. Priolo, V. Privitera and A. Carnera

      Version of Record online: 29 NOV 2013 | DOI: 10.1002/pssa.201300324

    2. Role of oxygen on the electrical activation of B in Ge by excimer laser annealing (pages 122–125)

      G. Impellizzeri, E. Napolitani, R. Milazzo, S. Boninelli, M. Cuscunà, G. Fisicaro, A. La Magna, G. Fortunato, F. Priolo and V. Privitera

      Version of Record online: 13 DEC 2013 | DOI: 10.1002/pssa.201300308

    3. Atom-probe tomography study of boron precipitation in highly implanted silicon (pages 126–130)

      Didier Blavette, Huiyuan Wang, Manon Bonvalet, Florian Hüe and Sébastien Duguay

      Version of Record online: 29 NOV 2013 | DOI: 10.1002/pssa.201300127

    4. More-than-Moore and advanced CMOS devices

      Individual heterojunctions of 3D germanium crystals on silicon CMOS for monolithically integrated X-ray detector (pages 131–135)

      Thomas Kreiliger, Claudiu V. Falub, Alfonso G. Taboada, Fabio Isa, Stefano Cecchi, Rolf Kaufmann, Philippe Niedermann, Aurélie Pezous, Schahrazède Mouaziz, Alex Dommann, Giovanni Isella and Hans von Känel

      Version of Record online: 29 NOV 2013 | DOI: 10.1002/pssa.201300175

    5. Atomistic modelling and continuum simulations

      TCAD-based DLTS simulation for analysis of extended defects (pages 136–142)

      Artur Scheinemann and Andreas Schenk

      Version of Record online: 9 JAN 2014 | DOI: 10.1002/pssa.201300233

    6. Process simulation of dopant diffusion and activation in germanium (pages 143–146)

      Nikolas Zographos and Axel Erlebach

      Version of Record online: 5 DEC 2013 | DOI: 10.1002/pssa.201300123

    7. Atomistic modelling and simulation of arsenic diffusion including mobile arsenic clusters (pages 147–151)

      Ignacio Martin-Bragado, Nikolas Zographos and Pedro Castrillo

      Version of Record online: 25 NOV 2013 | DOI: 10.1002/pssa.201300158

    8. Silicides and germanides

      Progress in the understanding of Ni silicide formation for advanced MOS structures (pages 152–165)

      D. Mangelinck, K. Hoummada, F. Panciera, M. El Kousseifi, I. Blum, M. Descoins, M. Bertoglio, A. Portavoce, C. Perrin and M. Putero

      Version of Record online: 9 JAN 2014 | DOI: 10.1002/pssa.201300167

    9. Regular contributions

      Interface charging effects in ferroelectric ZnO–BaTiO3 field-effect transistor heterostructures (pages 166–172)

      Peter Schwinkendorf, Michael Lorenz, Holger Hochmuth, Zhipeng Zhang and Marius Grundmann

      Version of Record online: 12 NOV 2013 | DOI: 10.1002/pssa.201330171

    10. Enhanced strength in bulk graphene–copper composites (pages 184–190)

      Ke Chu and Chengchang Jia

      Version of Record online: 28 OCT 2013 | DOI: 10.1002/pssa.201330051

    11. Raman scattering in orthorhombic CuInS2 nanocrystals (pages 195–199)

      V. M. Dzhagan, A. P. Litvinchuk, M. Ya. Valakh, M. Kruszynska, J. Kolny-Olesiak, C. Himcinschi and D. R. T. Zahn

      Version of Record online: 28 OCT 2013 | DOI: 10.1002/pssa.201330229

    12. Synthesis and Raman scattering of multiferroic Fe[BOND]Pb(Zr0.2Ti0.8)O3 core–shell wire arrays (pages 200–205)

      Mihaela Baibarac, Marian Sima, Elena Matei, Iuliana Pasuk and Lucian Mihut

      Version of Record online: 28 OCT 2013 | DOI: 10.1002/pssa.201330062

    13. Microstructure of ZnO-Li2CO3 compound studied by positron annihilation spectroscopy (pages 206–212)

      M. Jiang, L. L. Liu, Z. Wang and Z. Q. Chen

      Version of Record online: 28 OCT 2013 | DOI: 10.1002/pssa.201329327

    14. Microwave-assisted synthesis of CuInSe2 nanoparticles in low-absorbing solvents (pages 219–225)

      Richard P. Oleksak, Brendan T. Flynn, David M. Schut and Gregory S. Herman

      Version of Record online: 31 OCT 2013 | DOI: 10.1002/pssa.201330070

    15. One-step formation of nanostructures on silicon surfaces using pure hydrogen-radical-initiated reactions (pages 231–238)

      Hiroshi Nagayoshi, Spyros Diplas, John ChariesWalmsley, Niels H. Andersen, Arne Karlsson, Joachim Seland Graff, Vladimir Chirvony, Juan M. Pastor and Alexander Ulyashin

      Version of Record online: 11 NOV 2013 | DOI: 10.1002/pssa.201330220

  13. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Editorial
    6. Contents
    7. Recent and forthcoming publications in pss
    8. Advanced Materials Physics
    9. Preface
    10. Invited Articles
    11. Original Papers
    12. Feature Articles
    13. Original Papers
    14. Information for authors
    1. You have free access to this content
      Information for authors (pages 239–240)

      Version of Record online: 21 JAN 2014 | DOI: 10.1002/pssa.201470208

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