physica status solidi (a)

Cover image for physica status solidi (a)

April 2014

Volume 211, Issue 4

Pages 725–964

  1. Cover Picture

    1. Top of page
    2. Cover Picture
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    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Invited Articles
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Stability of graphene–silicon heterostructure solar cells (Phys. Status Solidi A 4∕2014)

      V. V. Brus, M. A. Gluba, X. Zhang, K. Hinrichs, J. Rappich and N. H. Nickel

      Version of Record online: 4 APR 2014 | DOI: 10.1002/pssa.201470223

      Thumbnail image of graphical abstract

      Graphene has become an extremely prospective material for numerous applications because of its excellent electrical and optical properties. The combination of conductivity and high transparency and the ability of large-area production render graphene suitable as a contact layer and transparent electrode in solar cells. Graphene brought into direct contact with n-type silicon introduces a built-in electric field at the heterojunction interface and forms a Schottky contact. Solar cells utilizing this effect show a conversion efficiency of 4.2%. However, the graphene-Si Schottky diodes are not stable and degrade strongly during the first days. In the study by Brus et al. (pp. 843–847) the influence of the graphene-silicon interface on the solar cell properties is investigated. The quality of this interface is crucial since the concentration of localized states and its ability to block minority carriers influence the device performance significantly. Passivation of the silicon surface with methyl groups prior to graphene deposition reduces recombination loss at the graphene/Si heterojunction. In addition, it enhances and stabilizes the photoelectric performance of undoped graphene/n-type c-Si(111) solar cells.

  2. Back Cover

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Invited Articles
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      THz intersubband transitions in AlGaN/GaN multi-quantum-wells (Phys. Status Solidi A 4∕2014)

      Mark Beeler, Catherine Bougerol, Edith Bellet-Amalaric and Eva Monroy

      Version of Record online: 4 APR 2014 | DOI: 10.1002/pssa.201470224

      Thumbnail image of graphical abstract

      III-nitride nanostructures have recently emerged as promising materials for new intersubband (ISB) technologies in a wide variety of applications. These ISB technologies rely on infrared optical transitions occurring between quantum-confined electronic states in the conduction band of GaN/Al(Ga)N nanostructures, namely quantum wells or quantum dots. When producing optoelectronic devices at the nanoscale, the errors induced from growth should not make or break a design. In their research presented on pp. 761–764, Monroy et al. theorize and demonstrate designs for THz absorption with robustness to these growth-induced errors.

  3. Issue Information

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Invited Articles
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Issue Information

      Version of Record online: 4 APR 2014 | DOI: 10.1002/pssa.201470225

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Invited Articles
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Contents (pages 725–729)

      Version of Record online: 4 APR 2014 | DOI: 10.1002/pssa.201470226

  5. Recent and forthcoming publications in pss

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Invited Articles
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
  6. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Invited Articles
    9. Original Papers
    10. Information for authors
    1. Bulk and thin film growth

      Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template (pages 731–735)

      Takuji Arauchi, Shotaro Takeuchi, Kunihiko Nakamura, Dinh Thanh Khan, Yoshiaki Nakamura, Hideto Miyake, Kazumasa Hiramatsu and Akira Sakai

      Version of Record online: 19 FEB 2014 | DOI: 10.1002/pssa.201300461

    2. Generation of dislocation clusters by glide m-planes in semipolar GaN layers (pages 736–739)

      N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn and H. T. Grahn

      Version of Record online: 20 MAR 2014 | DOI: 10.1002/pssa.201300465

    3. The impact of growth parameters on trench defects in InGaN/GaN quantum wells (pages 740–743)

      F. C.-P. Massabuau, A. Le Fol, S. K. Pamenter, F. Oehler, M. J. Kappers, C. J. Humphreys and R. A. Oliver

      Version of Record online: 14 FEB 2014 | DOI: 10.1002/pssa.201300485

    4. Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer (pages 744–747)

      H. Fang, M. Katagiri, H. Miyake, K. Hiramatsu, H. Oku, H. Asamura and K. Kawamura

      Version of Record online: 10 MAR 2014 | DOI: 10.1002/pssa.201300443

    5. Optical devices, visible

      Top–down fabrication and characterization of axial and radial III-nitride nanowire LEDs (pages 748–751)

      George T. Wang, Qiming Li, Jonathan J. Wierer, Daniel D. Koleske and Jeffrey J. Figiel

      Version of Record online: 24 FEB 2014 | DOI: 10.1002/pssa.201300491

    6. Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys (pages 752–755)

      Wataru Okubo, Shuhei Yagi, Yasuto Hijikata, Kentaro Onabe and Hiroyuki Yaguchi

      Version of Record online: 19 MAR 2014 | DOI: 10.1002/pssa.201300462

    7. Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures (pages 756–760)

      L. Schade, T. Wernicke, J. Raß, S. Ploch, M. Weyers, M. Kneissl and U. T. Schwarz

      Version of Record online: 27 FEB 2014 | DOI: 10.1002/pssa.201300448

    8. THz intersubband transitions in AlGaN/GaN multi-quantum-wells (pages 761–764)

      Mark Beeler, Catherine Bougerol, Edith Bellet-Amalaric and Eva Monroy

      Version of Record online: 14 FEB 2014 | DOI: 10.1002/pssa.201300431

    9. Optical devices, UV

      Transient photoluminescence of aluminum-rich (Al,Ga)N low-dimensional structures (pages 765–768)

      Pierre Lefebvre, Christelle Brimont, Pierre Valvin, Bernard Gil, Hideto Miyake and Kazumasa Hiramatsu

      Version of Record online: 25 FEB 2014 | DOI: 10.1002/pssa.201300505

  7. Invited Articles

    1. Top of page
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    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Invited Articles
    9. Original Papers
    10. Information for authors
    1. Electrical devices

      Technology for III-N heterogeneous mixed-signal electronics (pages 769–774)

      Kevin J. Chen, Alex Man Ho Kwan and Qimeng Jiang

      Version of Record online: 25 FEB 2014 | DOI: 10.1002/pssa.201300543

      Thumbnail image of graphical abstract

      Peripheral mixed-signal circuits with sensing, protection and control functions could provide optimized performance, increased functionality and enhanced reliability to III-N electronic applications such as high-frequency power amplifiers, power converters and high-temperature electronics. In this paper, the device technologies for implementing III-N mixed-signal integrated circuits (IC) are discussed, and the latest III-N mixed-signal IC prototypes are presented. The figure shows a GaN proportional-to-absolute-temperature (PTAT) voltage source.

  8. Original Papers

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Invited Articles
    9. Original Papers
    10. Information for authors
    1. Electrical devices

      In situ SiNx gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si (pages 775–778)

      Xing Lu, Jun Ma, Zhaojun Liu, Huaxing Jiang, Tongde Huang and Kei May Lau

      Version of Record online: 20 MAR 2014 | DOI: 10.1002/pssa.201300495

    2. Correlation of on-wafer 400 V dynamic behavior and trap characteristics of GaN-HEMTs (pages 779–783)

      T. Imada, D. Piedra, T. Kikkawa and T. Palacios

      Version of Record online: 19 FEB 2014 | DOI: 10.1002/pssa.201300523

    3. Regular Contributions

      Suppressed ferroelectric relaxor behavior of Mn-modified Ba(Zr0.3Ti0.7)O3 relaxor ceramics (pages 788–794)

      Qiwei Zhang, Jiwei Zhai, Hongqiang Li, Zhenxing Yue and Ling Bing Kong

      Version of Record online: 13 DEC 2013 | DOI: 10.1002/pssa.201330269

    4. Mechanical analysis of organic flexible devices by finite element calculation (pages 795–799)

      Masatoshi Sakai, Yota Yamazaki, Shohei Yamaguchi, Junro Hayashi and Kazuhiro Kudo

      Version of Record online: 19 DEC 2013 | DOI: 10.1002/pssa.201330151

    5. Luminescence centers and spectrum characteristics of a novel Eu2+-activated hexa-aluminate CaZrBAl9O18 (pages 811–816)

      Ruijin Yu, Hongjuan Li, Hailong Ma, Caifeng Wang and Huan Wang

      Version of Record online: 27 DEC 2013 | DOI: 10.1002/pssa.201330321

    6. Nanostructured hybrid material based on highly mismatched III–V nanocrystals fully embedded in silicon (pages 817–822)

      M. Benyoucef, T. Alzoubi, J. P. Reithmaier, M. Wu and A. Trampert

      Version of Record online: 27 DEC 2013 | DOI: 10.1002/pssa.201330395

    7. Electrical characteristics of lead iodide crystal devices on flexible substrate under mechanical tensile strain (pages 823–827)

      Hui Sun, Xinghua Zhu, Dingyu Yang, Jun Yang, Xiuying Gao and Xu Li

      Version of Record online: 27 DEC 2013 | DOI: 10.1002/pssa.201330319

    8. Study of incorporation efficiency of different precursor salts in fabrication of rare-earth doped optical fibers (pages 828–834)

      Anirban Dhar, Shyamal Das, Mukul Chandra Paul, Atasi Pal and Ranjan Sen

      Version of Record online: 27 DEC 2013 | DOI: 10.1002/pssa.201330315

    9. Electronic structure and band gap of oxygen bearing c-Zr3N4 and of c-Hf3N4 by soft X-ray spectroscopy (pages 835–842)

      Mikhail Yablonskikh, Dmytro Dzivenko, Judith Bourguille, Ralf Riedel, Elena Magnano, Fulvio Parmigiani and Andreas Zerr

      Version of Record online: 27 DEC 2013 | DOI: 10.1002/pssa.201330338

    10. Stability of graphene–silicon heterostructure solar cells (pages 843–847)

      V. V. Brus, M. A. Gluba, X. Zhang, K. Hinrichs, J. Rappich and N. H. Nickel

      Version of Record online: 30 JAN 2014 | DOI: 10.1002/pssa.201330265

    11. Correlation between photoluminescence and structure in silicon nanowires fabricated by metal-assisted etching (pages 848–855)

      Kotaro Oda, Yasushi Nanai, Toshiyuki Sato, Seiji Kimura and Tsuyoshi Okuno

      Version of Record online: 10 JAN 2014 | DOI: 10.1002/pssa.201330163

    12. Synthesis of location-dependent phosphorus-doped ZnO nanostructures on the porous alumina membranes (pages 856–861)

      Dazhi Hu, Donghua Fan, Yufu Zhu, Wei Wang, Fengming Pan, Ping Wu and Jiyu Fan

      Version of Record online: 10 JAN 2014 | DOI: 10.1002/pssa.201330159

    13. Microstructure, electrical properties, and electric field-induced phase transitions in NaNbO3–LiTaO3 lead-free ceramics (pages 869–876)

      Hailing Sun, Qiaoji Zheng, Yang Wan, Qiang Li, Yan Chen, Xiao Wu, Kin Wing Kwok, Helen Wong Lai-Wa Chan and Dunmin Lin

      Version of Record online: 14 JAN 2014 | DOI: 10.1002/pssa.201330252

    14. Temperature-dependent structure and magnetism of Mn-doped Ge nanowires (pages 877–883)

      S. Majumdar, S. Bhaumik, K. Rana, S. K. Ray and A. K. Das

      Version of Record online: 14 JAN 2014 | DOI: 10.1002/pssa.201330297

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    16. Inclusion of nano-Ag plasmonic layer enhancing the performance of p-Si/CdS solar cells (pages 890–900)

      B. Ghosh, D. Ghosh, S. Hussain, B. R. Chakraborty, G. Sehgal, R. Bhar and A. K. Pal

      Version of Record online: 20 JAN 2014 | DOI: 10.1002/pssa.201330424

    17. Intrinsic and extrinsic magnetic properties of nanocrystalline Pr2(Co,Fe)7 (pages 910–916)

      R. Fersi, N. Mliki, M. Cabié and L. Bessais

      Version of Record online: 22 JAN 2014 | DOI: 10.1002/pssa.201330259

    18. The extended concept of a self-compatible thermoelectric cooler (pages 917–923)

      Wolfgang Seifert and Volker Pluschke

      Version of Record online: 23 JAN 2014 | DOI: 10.1002/pssa.201330392

    19. Analysis of optical absorption and quantum efficiency due to light trapping in a n–i–p type amorphous silicon solar cell with textured back reflector (pages 924–931)

      S. M. Iftiquar, Juyeon Jang, Hyeongsik Park, Chonghoon Shin, Jinjoo Park, Junhee Jung, Sunbo Kim and Junsin Yi

      Version of Record online: 29 JAN 2014 | DOI: 10.1002/pssa.201330291

    20. Evidence of a minimum in refractive indexes of amorphous GexTe100−x films: Relevance to the development of infrared waveguides (pages 932–937)

      Caroline Vigreux, Andrea Piarristeguy, Raphaël Escalier, Stéphane Ménard, Marc Barillot and Annie Pradel

      Version of Record online: 29 JAN 2014 | DOI: 10.1002/pssa.201330407

    21. Design of self-assembled TiO2 architectures: Towards hybrid nanotubular interfaces (pages 938–945)

      Maryam Salari, Seyed Hamed Aboutalebi, Alfred T. Chidembo, Peter C. Innis, Konstantin Konstantinov, Hua Kun Liu and Patrik Schmuki

      Version of Record online: 30 JAN 2014 | DOI: 10.1002/pssa.201330393

    22. Influence of precursor sulfur content on film formation and the properties of sulfurized Cu2ZnSnS4 thin films for solar cells (pages 946–951)

      Dae-Ho Son, Dae-Hwan Kim, Kee-Jeong Yang, Dahyun Nam, Mungunshagai Gansukh, Hyeonsik Cheong and Jin-Kyu Kang

      Version of Record online: 30 JAN 2014 | DOI: 10.1002/pssa.201330425

    23. Strain effect on the electronic and optical properties of CdSe nanosheet (pages 952–957)

      Guolong Yu, Na Chen, Li Chen, Yiqun Xie, Feifei Wang and Xiang Ye

      Version of Record online: 30 JAN 2014 | DOI: 10.1002/pssa.201330478

    24. High color rendering index and chromatic-stable white organic light-emitting diodes with single-host double emissive layer structure (pages 958–962)

      Wenqing Zhu, Wenbing Sun, Hao Zhang, Xiaoliang Wu, Liangliang Sun, Mei Tang, Zixing Wang and Bin Wei

      Version of Record online: 31 JAN 2014 | DOI: 10.1002/pssa.201330417

  9. Information for authors

    1. Top of page
    2. Cover Picture
    3. Back Cover
    4. Issue Information
    5. Contents
    6. Recent and forthcoming publications in pss
    7. Original Papers
    8. Invited Articles
    9. Original Papers
    10. Information for authors
    1. You have free access to this content
      Information for authors (pages 963–964)

      Version of Record online: 4 APR 2014 | DOI: 10.1002/pssa.201470228

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