physica status solidi (a)

Cover image for physica status solidi (a)

16 March 1984

Volume 82, Issue 1

Pages fmi–fmi, 11–334, K1–K115

Currently known as: physica status solidi (a)

  1. Masthead

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Masthead (page fmi)

      Version of Record online: 15 APR 2008 | DOI: 10.1002/pssa.2210820101

  2. Review Article

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
  3. Structure

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Twist disclinations in thin SmC* liquid crystal (pages 47–54)

      L. Lejček, M. Glogarová and J. Pavel

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820105

    2. A complex high-temperature phase in Cu9Zr2 (pages 55–61)

      G. van Tendeloo, S. Amelinckx, A. F. Marshall and R. G. Walmsley

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820106

    3. Kinetics of the amorphous-crystalline transition in the metallic glass Fe40Ni40B20 (pages 63–66)

      N. K. Gobran, M. M. Danial and R. Kamel

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820107

  4. Lattice Properties

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
  5. Defects, Atomistic Aspects

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. The influence of Cu on dislocation motion in Si (pages 93–99)

      D. M. Vanderwalker

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820111

    2. Steady-state creep in quartz (pages 101–109)

      R. D. Baëta

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820112

    3. Optical study of defects in quenched MgO crystals (pages 111–117)

      E. Macho, J. Llopis, A. Remón, C. Ballesteros and J. Piqueras

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820113

    4. Reduction of copper contamination in germanium on heat treatments above 700 °C (pages 135–141)

      Y. Kamiura, F. Hashimoto, S. Yoneyama and T. Nobusada

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820116

    5. Positron annihilation studies on BeO powders (pages 143–148)

      G. Brauer, B. Kerbe, Z. S. Kajcsos and A. Ashry

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820117

  6. Magnetism

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Magnetic properties of UGaCo (pages 191–194)

      A. V. Andree, L. Havela, M. Zelený and J. Hřebík

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820123

    2. Magnetic Properties of RhMnSi and CoTiSi (pages 195–200)

      W. Bażela-Wróbel, A. Szytula and J. Leciejewicz

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820124

  7. Localized Electronic States and Transitions

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Glow curves and the emission of flux grown BaFCl:Gd crystals (pages 201–206)

      K. Somaiah and V. Hari Babu

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820125

    2. Photoconductivity and non-equilibrium carrier recombination in CdIn2S4 single crystals (pages 207–212)

      A. N. Georgobiani, A. N. Gruzintsev, Z. P. Ilyukhina, V. E. Tezlevan and I. M. Tiginyanu

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820126

    3. Profile of trapped charge in silicon nitride films in MNOS structures (pages 221–227)

      A. V. Nabok, B. A. Nesterenko, Yu. M. Shirshov, Yu. V. Goltvianskii and A. P. Dubchak

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820128

    4. Pre-and post-irradiation deformation effects on thermoluminescence studies in barium-doped NaCl crystals (pages 229–233)

      K. Narasimha Reddy, U. V. Subba Rao and M. Lakshmipathi

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820129

    5. Nature of thermal donors in silicon crystals (pages 235–242)

      M. Suezawa and K. Sumino

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820130

  8. Electric Transport

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Recombination current in abrupt semiconductor p-n junctions (pages 275–284)

      S. S. Simeonov and M. D. Ivanovich

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820135

    2. A photoelectrochemical study of CuWO4 single crystals (pages 285–294)

      J.-P. Doumerc, J. Hejtmanek, J.-P. Chaminade, M. Pouchard and M. Krussanova

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820136

    3. Growth and physical properties of TlBiTe2 crystals (pages 295–299)

      D. Coquillat, A. Pradel, G. Brun and J. C. Tedenac

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820137

  9. Device-Related Phenomena

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Ionization rates for electrons and holes in GaAsP (pages 319–325)

      G. Arnold and G. Oelgart

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820140

  10. Structure

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Time-resolved TEM of laser-annealing (pages K1–K3)

      O. Bostanjoglo and E. Endruschat

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820142

    2. Growth of single-crystalline regions on amorphous insulating substrates by zone-melting recrystallization (pages K5–K9)

      W. Scharff, J.-W. Erben, A. Wolf, M. Heber, C. Hamann, C. Weissmantel, M. Voelskov, J. Matthäi, R. Kögler, R. Klabes and E. Wieser

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820143

  11. Lattice Properties

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Thermal conductivity of pseudo-one-dimensional ferroelectric CsH2 PO4 (pages K27–K31)

      G. Spörl, D. D. Chat and E. Hegenbarth

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820147

  12. Defects, Atomistic Aspects

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
  13. Magnetism

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Magnetic properties of mixed chalcogenides of rare-earth elements and uranium (pages K53–K56)

      P. V. Nutsubidze, V. I. Chechernikov, L. G. Chachkhiani, Z. B. Chachkhiani, D. G. Barakadze and V. K. Slovyansmkh

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820152

    2. Effect of particle size on Mössbauer parameters of α-Fe2e3 (pages K57–K61)

      T. Tsuji, K. Naito and K. Ishigure

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820153

  14. Localized Electronic States and Transitions

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Photoluminescence of ternary layered crystals TlGaS2 (pages K75–K77)

      S. G. Abdullaeva, N. T. Mamedov, F. A. Mustafaev and E. Yu. Salaev

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820157

  15. Electric Transport

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Negative photoconductivity in selenium single crystals (pages K87–K90)

      A. I. Isaev, T. M. Guseinov, S. D. Mekhtieva and D. Sh. Abdinov

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820160

    2. Properties of Al-doped bismuth silicon oxide (pages K95–K99)

      V. I. Berezkin and A. I. Grachev

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820162

    3. Grain boundaries in germanium: Effects of exposure to plasmas (pages K101–K105)

      K. S. Jones and S. J. Pearton

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820163

  16. Device-Related Phenomena

    1. Top of page
    2. Masthead
    3. Review Article
    4. Structure
    5. Lattice Properties
    6. Defects, Atomistic Aspects
    7. Magnetism
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Localized Electronic States and Transitions
    16. Electric Transport
    17. Device-Related Phenomena
    1. Solar cells of schottky type with Ni[BOND]Pb Pc interface (pages K111–K115)

      Ya. I. Verzimacha, A. V. Kovalchuk, M. V. Kurik, C. Hamann and A. Mrwa

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820165

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