physica status solidi (a)

Cover image for physica status solidi (a)

16 April 1984

Volume 82, Issue 2

Pages fmi–fmi, 345–590, K117–K211

Currently known as: physica status solidi (a)

  1. Masthead

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Masthead (page fmi)

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820201

  2. Structure

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Solid phase epitaxial growth anisotropy of vacuum-deposited amorphous silicon (pages 345–353)

      I. G. Kaverina, V. V. Korobtsov, V. G. Zavodinskii and A. V. Zotov

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820202

    2. A volterra-type dislocation model of a low-angle [001] twist boundary in an F.C.C. crystal (pages 355–363)

      G. N. Gaidukov, A. A. Podrezov and J. P. Hirth

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820203

    3. Extended defects in vanadium doped rutile. An EPR and TEM study (pages 379–388)

      L. C. Otero-Diaz, J. Soeia and M. A. Alario-Franco

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820206

    4. Phase transitions in antimony at hydrostatic pressure up to 9 GPa (pages 389–398)

      L. G. Khvostantsev and V. A. Sidorov

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820207

    5. Structural perfection of selective GaAs regions in Si substrate windows (pages 399–403)

      V. I. Osinskii, F. M. Katsapov and E. A. Tyavlovskaya

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820208

  3. Lattice Properties

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Superelasticity effects in single crystals of Cu-15% Al-2% Co with non-coherent particles due to twinning (pages 405–412)

      A. D. Korotaev, Yu. I. Chumlyakov, V. F. Esipenko and L. S. Bushnev

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820209

    2. Hypersonic wave attenuation in yttrium aluminum garnet and gadolinium gallium garnet (pages 421–424)

      M. Krzesińska and T. Szuta-Buchacz

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820211

  4. Defects, Atomistic Aspects

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. A quantitative analysis of image contrast from extrinsic stacking faults (pages 425–439)

      D. J. H. Cockayne, P. Peouz, Z. Liu, G. R. Anstis and P. Karnthaler

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820212

    2. Fracture in LiF bicrystals at plastic deformation (pages 441–447)

      B. I. Smirnov, T. N. Snezhkova and O. L. Volkova

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820213

    3. Motion of partial dislocation in silicon carbide (pages 449–457)

      A. N. Pilyankevichand and V. F. Bbitun

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820214

    4. Dynamic alterations of the surface composition during sputtering of silicides (pages 459–466)

      Th. Wirth, V. Atzrodt and H. Lange

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820215

    5. Interaction of radiation defects with the surface of silicon (pages 467–473)

      V. I. Kuznetsov, P. F. Lugakov and A. V. Tsikunov

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820216

    6. Low-energy implantation of arsenic in silicon (pages 475–480)

      G. A. Kachurin, V. A. Mayer, S. I. Romanov, M. Voelskow, R. Klabes and E. Wieser

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820217

  5. Magnetism

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Planar Hall effect in thin amorphous RE–TM films with perpendicular anisotropy (pages 491–496)

      H. Ratajczak and I. Gościańska

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820219

  6. Extended Electronic States and Transitions

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Electron tunnelling in Pb/Ag ultrathin layered structures (pages 497–502)

      M. Jalochowski

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820220

  7. Localized Electronic States and Transitions

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. A new (non-copper-induced) 1.35 eV emission band in n-type GaAs. Origin and characteristics (pages 503–510)

      K. D. Glinchuk, A. V. Prokhorovich and N. S. Zayats

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820221

    2. The effect of dislocations on the charge-carrier recombination processes in irradiated silicon (pages 511–518)

      L. A. Kazakevich, P. P. Lugakov and I. M. Filippov

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820222

    3. Current DLTS spectra of MIS structures due to dielectric polarization of the insulator (pages 519–525)

      M. Hrobár, M. Grendel and I. Thurzo

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820223

    4. Model of the electroluminescence in short-pulse-excited thin-film structures based on ZnS: Mn (pages 527–531)

      E. Chimczak, W. S. Gordon and M. Bertrandt-Zyteowiak

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820224

    5. The effect of heat treatment on compensated CZ silicon (pages 533–536)

      P. I. Baranskii, V. M. Babich, N. P. Baran, A. A. Bugay, Yu. P. Dotsenko and V. B. Kovalchuk

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820225

  8. Electric Transport

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Photoconductivity and energy level structure of 2,4,7-trinitro-9-fluorenone thin films (pages 537–544)

      Yu. S. Bulyshev, I. M. Kashirskii and V. V. Sinitskii

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820226

    2. Transport properties of n-type CuInSe2 (pages 553–559)

      S. M. Wasim and A. Noguera

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820228

    3. Doping properties of Pb and Ge in Bi2Te2 and Sb2Te3 (pages 561–567)

      H. Süssmann, A. Priemuth and U. Pröhl

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820229

    4. Electrical and galvanomagnetic properties of films in the CuxFe1−xCr2S4 system (pages 569–574)

      E. M. Zub, E. V. Kuchis and S. V. Sukiivalo

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820230

    5. Photovoltaic effects in nematic and cholesteric mesophases containing nonmesogenic compounds (pages 575–579)

      Cornelia Moţoc, R. Mitroi and C. Roşu

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820231

  9. Device-Related Phenomena

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. The double SQUID as a digital memory cell (pages 581–590)

      Th. Roatsch and H.-G. Meyer

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820232

  10. Structure

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Epitaxial regrowth of amorphous or polycrystalline silicon layers on silicon single crystals and bridging epitaxy by flash lamp irradiation (pages K121–K123)

      R. Klabes, J. Matthäi, M. Voelskow, E. Wieser, J.-W. Erben, W. Scharff and C. Weissmantel

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820234

    2. On the phase transition of KH2PO4 at T ≈110 °C (pages K125–K128)

      A. Ioanid, M. Popescu, N. Vlahovici and I. Bunget

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820235

    3. On the phase transition and crystal field effects in FeSiF6·6H2O (pages K129–K132)

      P. Orlandi and A. Rigamonti

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820236

    4. Détermination de la structure cristallographique de la phase de type G Ni16Mn6As7 par (pages K133–K136)

      B. Lambert-Andron, P. Chaudouet, R. Madar and R. Fruchart

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820237

  11. Lattice Properties

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. The linear thermal expansion coefficient of a Ga xIn1-xAsyyP1y layer on in P:Sn substrate (pages K137–K140)

      U. Pietsch, J. Bak-Misiuk and V. Gottschalch

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820238

  12. Defects, Atomistic Aspects

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Small angle neutron scattering on a reactor beam irradiated silicon single crystal (pages K141–K143)

      F. Eichhorn, J. Kulda and P. Mikula

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820239

    2. VK centres in thermo-exoemission from CsBr:TI (pages K149–K152)

      B. Sorkin and H. Kääbre

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820241

    3. Multipulse H 1NMR study of proton self-diffusion in scandium and lutetium dihydride (pages K153–K157)

      O. J. Żogał, Ch. Jäer, H. Döhler and B. Schnabel

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820242

  13. Magnetism

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Isotopic effect in neutron-irradiated Fe40Ni40B20 alloys (pages K159–K162)

      V. Hajko, A. Zentko, M. Timko and V. Hajko Jr.

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820243

    2. The structural diagrams of magnetic decompositive alloys (pages K163–K168)

      Z. A. Matysina, D. R. Fuzdvyanetskii and S. Y. Zaginaichenko

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820244

    3. Magnetic moment and its temperature variation of amorphous (Fe0.5Ni0.5 1-xBx alloys (pages K169–K172)

      T. Soumura, S. Saito, T. Kuraishi and T. Maeda

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2210820245

    4. Magnetoelastic properties of Fe1−x Bx amorphous thin films (pages K177–K179)

      R. Żuberek, F. Stobiecki and J. Wosik

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820247

  14. Extended Electronic States and Transitions

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Composition dependence of the optical energy gap in Pb1−xHgxTe alloy thin films (pages K181–K184)

      Mukesh Jain, A. V. R. Warrier and H. K. Sehgal

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820248

  15. Localized Electronic States and Transitions

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Concentrational 3μm stimulated emission tuning in the (Gd1−xErx)3Al5O12 crystal system (pages K185–K190)

      A. A. Kaminskii, A. G. Petrogyan, K. L. Ovanesyan, G. O. Shironyan, V. A. Fedorov and S. E. Sarkisov

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820249

  16. Electric Transport

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Electrical properties of electron- and proton-irradiated GaAs and ZnGeAs2 solid solutions (pages K191–K194)

      V. N. Brudnyi, M. A. Krtvov, A. I. Potapov and Yu. V. Rud

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820250

    2. Deposition of Bi2CdS4 films by the spray pyrolysis technique (pages K195–K198)

      S. H. Pawar, S. P. Tamhankar and C. D. Lokhande

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820251

    3. Native acceptor defects in chlorine doped single crystals of CdTe (pages K199–K204)

      R. Jašinskaite, A. Sakalas, A. Martinaitis and P. Höchl

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820252

  17. Device-Related Phenomena

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, Atomistic Aspects
    6. Magnetism
    7. Extended Electronic States and Transitions
    8. Localized Electronic States and Transitions
    9. Electric Transport
    10. Device-Related Phenomena
    11. Structure
    12. Lattice Properties
    13. Defects, Atomistic Aspects
    14. Magnetism
    15. Extended Electronic States and Transitions
    16. Localized Electronic States and Transitions
    17. Electric Transport
    18. Device-Related Phenomena
    1. Temperature dependence of minority carrier lifetime in VPE GaP:N, Te (pages K205–K208)

      Ulrike Woggon, K. Wandel and H. Weinert

      Article first published online: 17 FEB 2006 | DOI: 10.1002/pssa.2210820253

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