physica status solidi (a)

Cover image for physica status solidi (a)

16 June 1984

Volume 83, Issue 2

Pages fmi–fmi, 429–729, K93–K219

Currently known as: physica status solidi (a)

  1. Masthead

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Masthead (page fmi)

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830201

  2. Structure

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Ion beam analysis of amorphous silicon films produced by magnetron sputtering (pages 437–443)

      A. Turos, H. Frey, O. Meyer, W. Müller and J. M. Pirrung

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830203

    2. Effects of systematic reflections on diffraction contrast in H.C.P. cobalt (pages 445–453)

      R. Pérez, S. S. Sheinin and K. Z. Botros

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830204

    3. Backscattering diffraction of a pulsed neutron beam on an elastically bent single crystal (pages 455–460)

      Yu. A. Aleksandrov, B. Chalupa, J. Kulda, T. A. Machekrina, R. Michalec, P. Mikula, L. N. Sedláková, J. Vávra and M. Vrána

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830205

    4. Phase transitions in non-stoichiometric cerium hydrides (pages 461–465)

      I. O. Bashkin, M. E. Kost and E. G. Ponyatovskii

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830206

    5. Linear thermal expansion of SrTiO3 (pages 467–472)

      S. Tsunekawa, H. F. J. Watanabe and H. Takei

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830207

    6. Annealing structures of grain boundaries in zirconium (pages 485–497)

      Th. Karakostas and P. Delavignette

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830209

  3. Lattice Properties

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. The hardness of chromium-and titanium-doped sapphire crystals (pages 499–506)

      B. Müller, P. Gratj and G. Kluge

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830210

  4. Defects, atomistic aspects

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Radiation-induced rod-like defects in silicon and germanium (pages 543–551)

      H. Bartsch, D. Hoehl and G. Kästner

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830215

  5. Magnetism

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
  6. Extended electonic states and transitions

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Effects of electronic structure on ion stopping cross-section in solids (pages 573–580)

      V. G. Grygoriev, F. G. Neshov, A. A. Puzanov and A. R. Urmanov

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830219

    2. Optical properties of Ga-substituted magnetoplumbites (pages 581–588)

      P. Široký, E. Schmidt, F. Lukeš and J. Humliček

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830220

  7. Original Papers. Localized electric states and transitions

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Thermoluminescence of ZnO:Pr and ZnO:Gd under UV, β-and γ-ray irradiations (pages 605–611)

      S. Bhushan, D. Diwan and S. P. Kathuria

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830223

    2. Gap states density in a-Si:H deduced from subgap optical absorption measurement on Schottky solar cells (pages 617–623)

      M. Vaněček, A. Abrahám, O. Štika, J. Stuchlík and J. Kočka

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830225

    3. Lumineszenz und sensibilisierte Emission der dreiwertigen Seltenen Erden in Ca3La2W2O12 (pages 631–636)

      H.-D. Autenrieth, S. Kemmler-Sack and W. Wischert

      Version of Record online: 15 APR 2008 | DOI: 10.1002/pssa.2210830227

    4. Cathodoluminescence from MgO single crystals containing a high concentration of anion vacancies (pages 645–649)

      C. Ballesteros, J. Piqueras, J. Llopis and R. González

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830229

    5. Analysis of thermoluminescence of topaz (pages 651–655)

      R. K. Gartia and R. Singha

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830230

  8. Electric transport

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Electrical resistivity of an equiatomic solid and liquid Au[BOND]Cd alloy (pages 657–667)

      K. Mukherjee, M. Chandrasekaran and M. Kato

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830231

  9. Device-related phenomena

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Spectral sensitivity calculations on n+–p and n+–p–p+ silicon solar cells (pages 693–700)

      P. C. Dhanasekaran, P. R. Vaya and B. S. V. Gopalam

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830236

    2. Transport mechanism in GaAs schottky diodes deep centres effects (pages 701–708)

      N. G. Filonov, N. K. Maksimova, A. P. Vyatkin, I. D. Homanova and A. M. Mysik

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830237

    3. Study of highly concentrated ZnS:Mn ACTFEL devices (pages 709–717)

      J. Benoit, P. Benalloul, A. Geoffroy, N. Balbo, C. Barthou, J. P. Denis and B. Blanzat

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830238

  10. Erratum

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. You have free access to this content
      Erratum (page 729)

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830240

  11. Structure

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. A Positron study of iron alloys (pages K93–K96)

      C. Hidalgo, N. de Diego and M. A. Ochando

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830241

    2. Positron annihilation study of martensitic transformation in Cu[BOND]Zn[BOND]Al alloy (pages K97–K101)

      Z. Bojarski, H. Morawiec and T. J. Panek

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830242

    3. Bismuth influence on a-Se film crystallization (pages K103–K108)

      G. Fleury, A. Hamou, C. Lhermitte and C. Viger

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830243

    4. On the structural model of CVD a-Si:OH films (pages K109–K111)

      K. Ots and M. Seilenthal

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830244

    5. Some properties of cyclotrimethylene-trinitramine single crystals (pages K113–K115)

      Z. Gałsdecki, P. Grochulski, Z. Wawrzak and J. Stȩpień-Damm

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830245

    6. A neutron diffraction study of crystal and domain structure in LiKSO4 (pages K117–K121)

      A. M. Balagurov, B. N. Savenko, M. Dlouhá, S. Vratislav and Z. Jirák

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830246

  12. Lattice properties

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. A new ferovskite-like ferroelectric Bi2Pb1/3Bi2/3Ti4/3 W2/3O9 with mixed bismuth layer structure (pages K127–K129)

      L. A. Shebanov, L. V. Korzunova and E. Zh. Freidenfeld

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830248

  13. Defects, atomistic aspects

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Positron lifetime in polycrystalline gadolinium (pages K131–K133)

      A. M. Gómez and J. Serna

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830249

  14. Magnetism

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. First-order phase transition from antiferromagnetic to paramagnetic phase in (C2H5NH3)2CuCl4 (pages K135–K140)

      A. N. Bogdanov, A. V. Zhuravlev and V. T. Telepa

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830250

    2. Rotational hysteresis of 2-17-RE-cobalt magnets (pages K141–K144)

      L. Jahn and V. Christoph

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830251

  15. Defects, atomistic aspects

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Photoluminescence study of ammonium tetrabromozincate (pages K145–K148)

      P. Madhusudana Rao and K. V. Reddy

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830252

    2. Interconfiguration transitions of 4f3-4f25d1 of the Nd3+ ion in YAG single crystals (pages K153–K157)

      N. Yu. Konstantinov, L. G. Karaseva, V. V. Gromov and A. V. Yakovlev

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830254

    3. Stimulated emission of Pr3+, Nd3+, and Er3+ ions in crystals with complex anions (pages K159–K163)

      A. A. Kaminskii, A. G. Petrosyan and K. L. Ovanesyan

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830255

  16. Electric transport

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Anisotropy of electrical conductivity in Si2Te3 (pages K183–K186)

      M. Rick, J. Rosenzweig and U. Birkholz

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830260

    2. Electrical resistivity of the Ni2MnIn heusler alloy (pages K187–K190)

      G. L. F. Fraga, J. V. Kunzler, F. Ogiba and D. E. Brandão

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830261

    3. Conductivity anisotropy in α-HgS (pages K199–K202)

      C. Butti, A. Raymond and G. Massé

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2210830264

    4. Picosecond pulse generation capability of optically driven superconducting thin films (pages K203–K205)

      R. Sobolewski, C. V. Stancampiano, G. Mourou and D. Butler

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830265

    5. On the barrier height in grain boundaries of InSb bicrystals (pages K207–K210)

      R. Herrmann, G. Nachtwei and W. Kraak

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830266

  17. Device-related phenomena

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. Photon storage mode in a forward-biased p-n junction (pages K215–K217)

      E. A. Akopyan, A. Sh. Mekhtiev and A. L. Poimanov

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830268

  18. Erratum

    1. Top of page
    2. Masthead
    3. Structure
    4. Lattice Properties
    5. Defects, atomistic aspects
    6. Magnetism
    7. Extended electonic states and transitions
    8. Original Papers. Localized electric states and transitions
    9. Electric transport
    10. Device-related phenomena
    11. Erratum
    12. Structure
    13. Lattice properties
    14. Defects, atomistic aspects
    15. Magnetism
    16. Defects, atomistic aspects
    17. Electric transport
    18. Device-related phenomena
    19. Erratum
    1. You have free access to this content
      Erratum (page K219)

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210830269

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