physica status solidi (a)

Cover image for physica status solidi (a)

16 April 1986

Volume 94, Issue 2

Pages fmi–fmi, 445–877, K97–K166

Currently known as: physica status solidi (a)

  1. Masthead

    1. Top of page
    2. Masthead
    3. Original Papers
    4. Short Notes
    1. Masthead (page fmi)

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940201

  2. Original Papers

    1. Top of page
    2. Masthead
    3. Original Papers
    4. Short Notes
    1. Ion mixing to form amorphous alloys in the Co[BOND]Cd system (pages 483–488)

      Zhi-Hua Yan, Bai-Xin Liu and Heng-De Li

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940206

    2. Pyramidal pit formation at the Au/GaAs interface during heat treatment (pages 507–513)

      B. Pécz, E. Jároli, G. Radnóczi, R. Veresegyházy and I. Mojzes

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940209

    3. Elastic constants of a stressed crystal: IV. Sound propagation matrix (pages 515–521)

      E. V. Zarochentsev, S. M. Orel and A. Yu. Yakovets

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940210

    4. On the effect of high-rate strain on diffusion mass transfer in metals (pages 553–560)

      Yu. S. Nechaev, S. A. Vladimirov, N. A. Olshevskii and V. S. Khlomov

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940215

    5. Steady state creep during transformation in Zn–40 wt% Al and Zn-0.5 wt% Al alloys (pages 561–568)

      M. S. Sakr, A. E. E. Abdel-Rahiem and A. A. El-Daly

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940216

    6. Defects in supersaturated solid solution of arsenic in silicon at rapid thermal annealing (pages 569–572)

      V. P. Popov, A. V. Dvurechenskii, B. P. Kashnikov and A. I. Popov

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940217

    7. Energy of dislocation loops in crystals (pages 581–586)

      A. F. Vladimirov and E. N. Moos

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940219

    8. Role of defects in the annealing behaviour of RF sputtered CdS films (pages 587–593)

      I. Mártil, N. de Diego and C. Hidalgo

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940220

    9. Selfdiffraction and phase conjugation of laser beams in electrooptic crystals (pages 623–633)

      N. Kukhtabev, B. Pavlik and T. Semenets

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940225

    10. Electrical and optical bandgap narrowing due to heavy doping in silicon (pages 635–644)

      Carolyn M. van Vliet and P. Vasilopoulos

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940226

    11. Trapping levels in KAlSi3O8 (pages 645–651)

      A. B. Ahmed and R. K. Gaetia

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940227

    12. Recombination levels in non-stoiehiometrie TlGaSe2 (pages 653–657)

      G. D. Guseinov, V. A. Aliev and E. F. Bagirzade

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940228

    13. Position-dependent theory of heterojunctions (pages 687–691)

      H. Unlu and A. Nussbaum

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940233

    14. Voltage controlled negative resistance diode with injection gate (pages 693–700)

      M. Iida, T. Kurosu, Y. Akiba and S. Okazaki

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940234

    15. The electroluminescence of rare-earth implanted ZnS and ZnSe diodes (pages 701–712)

      F. J. Bryant, W. E. Hagston and A. Krier

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940235

    16. Characterization of Au–n-InP Schottky diodes by EBIC (pages 713–718)

      J. M. Peransin, B. E. F. Da Silva and J. F. Bresse

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940236

    17. GaAs Schottky varactors for linear frequency tuning in X-band (pages 719–726)

      Zs. J. Horváth, I. Gyúbó, M. Németh-Sallay, B. Szentpáli and K. Kazi

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940237

    18. Rapid annealing of ion-implanted GaAs (pages 745–766)

      W. Wesch and G. Götz

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940241

    19. Residual defects in implanted silicon after annealing with incoherent light (pages 767–772)

      D. Baither, R. Koegler, D. Panknin and E. Wieser

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940242

    20. Formation of monocrystalline layers by explosive crystallization of ion-implanted amorphous silicon (pages 781–786)

      E. Glaser, G. Andbä, H. Bartsch, K. Drenda and G. Götz

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940244

    21. Laser annealing of ion-implanted NiSi layers (pages 787–791)

      C. Kaschner, A. Witzmann, K. Gärtner and G. Götz

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940245

    22. Ion-beam-assisted annealing of amorphized silicon (pages 793–796)

      H. Kerkow, G. Kreysch, G. Wolf and K. Holldack

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940246

    23. Mössbauer investigations of phase formation in nitrogen-implanted iron (pages 823–825)

      K. K. Kadyrzhanov, A. K. Zhetbaev, M. Sh. Aimanovv and A. N. Ozernoi

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940249

    24. Chemical state of ion-implanted nitrogen in iron (pages 845–848)

      J. Zemek and J. Král

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940253

    25. Implantation with ion pulses (pages 855–858)

      I. Krafcsik, L. Kiralyhidi, P. Riedl, J. Gyulai and M. Fried

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940255

    26. Design of an electrostatic octupole for micro-beam deflection (pages 859–863)

      F. K. Naehring and G. Otto

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940256

    27. Anisotropic etchants inhibiting properties of silicon-nitride compound layers produced by ion implantation (pages 865–869)

      V. K. Gueorguiev, L. I. Popova, I. N. Petrov and I. G. Stoev

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940257

    28. Thick monocrystalline silicon on oxidized silicon wafers produced by a zone melting process using a scanning halogen lamp (pages 871–877)

      B. Tillack, P. Möck, R. Banisch, R. Reinboth, H. H. Richter, M. Voelskow, J. Matthái and E. Wiesek

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940258

  3. Short Notes

    1. Top of page
    2. Masthead
    3. Original Papers
    4. Short Notes
    1. NMR free induction decay measurements in iron (pages K97–K101)

      D. K. Fowler, D. C. Creagh and G. V. H. Wilson

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940259

    2. Magnetic properties of Fe1+xCr2−xS4 (0 < x ≦ 0.5) (pages K103–K106)

      R. Z. Sadykhov, L. M. Valiev, N. B. Nabieva and Z. M. Namazov

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940260

    3. Photoluminescence and excitation spectra in SrxCa1−x MoO4 solid solutions (pages K113–K117)

      Sh. M. Efendiev, N. G. Darvishov and F. K. Yusifov

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940262

    4. Isothermal frequency scan DLTS (pages K119–K124)

      G. Ferenczi, J. Boda and T. Pavelka

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940263

    5. Cathodoluminescence of electron irradiated cubic boron nitride (pages K125–K127)

      A. M. Zaitsev, A. A. Melnkov, V. B. Shipilo and E. M. Shishonok

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940264

    6. Investigation of gallium selenide films, grown by the hot wall method, on silicon substrates (pages K129–K132)

      B. I. Sysoev, N. N. Bezryadin, Yu. V. Synorov and B. L. Agapov

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940265

    7. Electrical conductivity of Zn3P2 (pages K133–K135)

      K. Sierańki and J. Szatkowski

      Version of Record online: 24 FEB 2008 | DOI: 10.1002/pssa.2210940266

    8. Thermally and carrier induced changes in the photoconductivity in a-Si in the subnanosecond time domain (pages K137–K141)

      H. Bergner, V. Brückner, F. Kerstan, L. Leine, M. Schulze and W. Nowick

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940267

    9. Properties of p-CuInSe2/Al Schottky devices (pages K153–K158)

      O. K. Rao, J. J. B. Prasad, D. Sridevi, K. V. Reddy and J. Sobhanadri

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940270

    10. Characterization of the InP surface by photoluminescence imaging (pages K163–K166)

      M. Garrigues and S. K. Krawczyk

      Version of Record online: 17 FEB 2006 | DOI: 10.1002/pssa.2210940272

SEARCH

SEARCH BY CITATION