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Ordering in undoped hexagonal AlxGa1–xN grown on sapphire (0001) with 0.09 < x < 0.247

  1. M. Laügt,
  2. E. Bellet-Amalric2,
  3. P. Ruterana3,
  4. F. Omnès1

Article first published online: 26 MAR 2003

DOI: 10.1002/pssb.200301760

Issue

physica status solidi (b)

physica status solidi (b)

Volume 236, Issue 3, pages 729–739, April 2003

Additional Information

How to Cite

Laügt, M., Bellet-Amalric, E., Ruterana, P. and Omnès, F. (2003), Ordering in undoped hexagonal AlxGa1–xN grown on sapphire (0001) with 0.09 < x < 0.247. physica status solidi (b), 236: 729–739. doi: 10.1002/pssb.200301760

Author Information

  1. 1

    CNRS-CRHEA, Rue Bernard Gregory, O6560 Valbonne, France

  2. 2

    DRFMC/SP2M/SGX, CEA/Grenoble, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9, France

  3. 3

    LERMAT, FRE 2149, CNRS ISMRA, 6 Bd. Maréchal Juin, 14050 Caen, France

Publication History

  1. Issue published online: 26 MAR 2003
  2. Article first published online: 26 MAR 2003
  3. Manuscript Accepted: 27 JAN 2003
  4. Manuscript Revised: 18 JAN 2003
  5. Manuscript Received: 18 OCT 2002

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Keywords:

  • 61.10.Kw;
  • 61.66.Fn;
  • 68.37.Lp;
  • 81.15.Gh

Abstract

Multiple ordering has been observed both by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) in AlxGa1–xN grown by low pressure metal-organic vapor phase epitaxy (LP-MOVPE) on sapphire (0001) with x varying from 9 to 25 percent. This is shown to take place even simultaneously in the same sample; beside the disordered alloy, AlGaN2 (1:1), and Al0.25Ga0.75N (3:1), there is an additional type which a quite large unit cell. In the latter, the c parameter is six times larger than that of the disordered alloy. Through the analysis of X-ray diffraction data and comparison with TEM observations, a structure model is proposed. Taking into account the super-lattice reflections intensity and symmetry, we conclude that this ordered phase contains two consecutive AlN monolayers in the 3.1 nm unit cell that corresponds to Al0.16Ga0.84N (10:2).

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