A-plane (11equation image0) InN growth on nitridated R-plane (10equation image2) sapphire by ECR-MBE



A-plane (11equation image0) InN has been successfully grown on R-plane (10equation image2) sapphire substrate by electron cyclotron resonance (ECR) plasma-exited molecular beam epitaxy through substrate nitridation process. The substrate nitridation of R-plane sapphire by ECR nitrogen plasma was carried out at 430 °C for 10 and 15 min. The results of reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and scanning electron microscopy indicated the formation of A-plane InN on R-plane sapphire. Inclusion of cubic InN was also observed together with A-plane InN through RHEED and XRD measurements in case of A-plane InN layer grown on 10 min nitridated substrate. However, when the nitridation time of R-plane sapphire by ECR nitrogen plasma increased to 15 min, it is confirmed that formation of cubic InN was successfully suppressed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)