Original Paper
Self-assembly of carbon nanotube field-effect transistors by ac-dielectrophoresis
Article first published online: 14 SEP 2006
DOI: 10.1002/pssb.200669182
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Issue

physica status solidi (b)
Special Issue: Electronic Properties of Novel Materials
Volume 243, Issue 13, pages 3355–3358, November 2006
Additional Information
How to Cite
Taeger, S., Sickert, D., Atanasov, P., Eckstein, G. and Mertig, M. (2006), Self-assembly of carbon nanotube field-effect transistors by ac-dielectrophoresis. physica status solidi (b), 243: 3355–3358. doi: 10.1002/pssb.200669182
Publication History
- Issue published online: 23 OCT 2006
- Article first published online: 14 SEP 2006
- Manuscript Accepted: 1 AUG 2006
- Manuscript Received: 23 APR 2006
Funded by
- BMBF. Grant Number: 13N8512
- Abstract
- References
- Cited By
Keywords:
- 81.07.De;
- 81.16.Dn;
- 85.30.Tv;
- 85.35.Kt
Abstract
We report an entirely self-assembly based method for the bottom-up fabrication of carbon nanotube (CNT) field effect transistors (FETs). First, the single-walled CNTs are dispersed in water by means of single-stranded DNA. Thereafter, CNT connects are grown between adjacent metal electrodes by ac-dielectrophoresis. Finally, to obtain high-performance FETs, the metallic CNTs are eliminated by burning them through applying an intensive current while the semiconducting ones are switched off. In this way, we were able to produce multi-tube CNT-FETs with on/off ratios larger than 1000. Here we describe the preparation of the devices along with their microscopic and electrical characterization. Possible applications of the fabricated CNT-FETs are gas- or biosensors. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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