Ultrafast carrier dynamics in semiconductor nanowires
Article first published online: 11 AUG 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 246, Issue 9, pages 1973–1995, September 2009
How to Cite
Prasankumar, R. P., Upadhya, P. C. and Taylor, A. J. (2009), Ultrafast carrier dynamics in semiconductor nanowires. Phys. Status Solidi B, 246: 1973–1995. doi: 10.1002/pssb.200945128
- Issue published online: 24 AUG 2009
- Article first published online: 11 AUG 2009
- Manuscript Accepted: 10 JUL 2009
- Manuscript Revised: 8 JUL 2009
- Manuscript Received: 4 MAR 2009
Semiconductor nanowires (NWs) are nanostructures with a number of novel optical and electronic properties that offer great promise for applications in areas including nanoelectronics, thermoelectrics, sensing, and nanophotonics. To realize the full potential of these unique nanosystems, however, a deep understanding of their response to optical excitation on a sub-picosecond time scale is required. Here, we review recent ultrafast optical studies of carrier dynamics in semiconductor NWs. These experiments have been performed on different materials as a function of both intrinsic NW parameters such as diameter and doping as well as experimental parameters including photoexcited carrier density and wavelength. A variety of phenomena, including one-dimensional (1D) exciton dynamics, rapid carrier trapping at surface and bulk defects, and lasing from an electron-hole plasma (EHP) have been observed. These first measurements of ultrafast carrier dynamics are a tantalizing hint of the rich physics yet to be discovered in these quasi-1D systems.
Ultrafast optical spectroscopy can track the temporal evolution of carrier populations in semiconductor NWs with femtosecond time resolution.