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Pressure dependence of Raman modes at the interface of a CIGS/CdS/ZnO solar cell

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Abstract

CuInSe2/CdS/ZnO and CuInGaSe2/CdS/ZnO heterojunction solar cells have been prepared and the Raman scattering spectra from the interface between CdS buffer and CIS absorber layer have been measured as a function of hydrostatic pressure. CuInSe2 absorber layers were prepared by the metal organic chemical vapour deposition (MOCVD) technique on Mo coated soda lime glass. The CdS buffer layer and ZnO window layer were deposited by chemical bath deposition (CBD) and R. F. magnetron sputtering, respectively. The pressure coefficient of the A1(Γ1) peak of the CIS layer in the solar cell was measured to be equation image, slightly smaller than the value obtained for a thin film of CIS only, which was equation image. The measured pressure coefficient of the A1(Γ1) peak of the CdS layer in the solar cell, equation image, is much larger than that obtained with the CdS thin film grown on a GaAs substrate, which was equation image. The pressure coefficient of the A1(Γ1) peak in the CuIn0.7Ga0.3Se2 thin film is equation image, which is lower than that of the CuInSe2 thin film.

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