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Polarization switching of the optical gain in semipolar InGaN quantum wells

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Abstract

We investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs) depending on indium content and charge carrier concentration using self-consistent 6 × 6 k·p-band structure calculations. The semipolar planes considered here are the equation image- and the equation image-plane. In contrast to the equation image-plane, the dominant polarization of the optical gain in a QW on the equation image-plane can depend on both the indium content and the charge carrier concentration, as reported from experiments. These effects are explained by a detailed analysis of the wave function composition of the topmost valence bands in a semipolar QW.

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