Growth and coalescence behavior of semipolar GaN on pre-structured r-plane sapphire substrates
Article first published online: 6 SEP 2010
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 248, Issue 3, pages 588–593, March 2011
How to Cite
Schwaiger, S., Metzner, S., Wunderer, T., Argut, I., Thalmair, J., Lipski, F., Wieneke, M., Bläsing, J., Bertram, F., Zweck, J., Krost, A., Christen, J. and Scholz, F. (2011), Growth and coalescence behavior of semipolar GaN on pre-structured r-plane sapphire substrates. Phys. Status Solidi B, 248: 588–593. doi: 10.1002/pssb.201046336
- Issue published online: 21 FEB 2011
- Article first published online: 6 SEP 2010
- Manuscript Accepted: 29 JUL 2010
- Manuscript Revised: 25 JUL 2010
- Manuscript Received: 24 JUN 2010
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