Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
Article first published online: 7 DEC 2010
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 248, Issue 3, pages 578–582, March 2011
How to Cite
Wieneke, M., Noltemeyer, M., Bastek, B., Rohrbeck, A., Witte, H., Veit, P., Bläsing, J., Dadgar, A., Christen, J. and Krost, A. (2011), Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?. Phys. Status Solidi B, 248: 578–582. doi: 10.1002/pssb.201046372
- Issue published online: 21 FEB 2011
- Article first published online: 7 DEC 2010
- Manuscript Accepted: 2 NOV 2010
- Manuscript Revised: 27 OCT 2010
- Manuscript Received: 9 JUL 2010
- heteroepitaxial growth;
- stacking faults
In this paper, we compare the effectiveness of two different methods regarding the reduction of defect densities in heteroepitaxially grown a-plane GaN by heavy Si doping. The insertion of well-established in situ SixNy nanomasks leads to locally heavy Si δ-doped GaN. By increasing the SixNy deposition time in the range from 0 to 300 s the full width at half maxima (FWHM) of the X-ray diffraction ω-scans at in-plane GaN(100) and GaN(0002) Bragg reflections decreases from 0.55° to 0.24° and from 0.45° to 0.16°, respectively. When growing without any SixNy interlayer but instead with continuously heavy Si-doping, these values are further decreased to 0.13° and 0.15°, respectively. By measuring several higher order reflections and detailed evaluation of the ω-scan broadening in Williamson–Hall-plots (WHPs) a considerable reduction in defect densities and no hint of basal plane stacking faults (BSFs) were found for the heavy Si doped a-plane GaN sample. To verify this result the micro-structural properties of this sample were additionally investigated by transmission electron microscopy and cathodoluminescence (CL).