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Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

Authors

  • Monika Bajda,

    Corresponding author
    1. Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
    2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
    • Phone: +48 22 553 23 84, Fax: +48 22 621 94 75
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  • Bernard Piechal,

    1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
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  • Filip Dybała,

    1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
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  • Artem Bercha,

    1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
    2. Uzhgorod National University, Pidhirna 46, 88000 Uzhgorod, Ukraine
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  • Witold Trzeciakowski,

    Corresponding author
    1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
    • Phone: +48 22 876 03 46, Fax: +48 22 876 04 52
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  • Jacek A. Majewski

    1. Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
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Abstract

Wavelength dependent gain has been calculated for InGaAs/GaAs quantum-well (QW) lasers as a function of hydrostatic pressure and temperature. The shift of the gain maximum for such laser is equal to −140 nm by increasing the pressure up to 20 kbar and −60 nm by cooling down from 300 to 100 K. The width of the gain curve (determining the possible tuning range with external grating) is significantly reduced at low temperatures and (to a lower extent) at high pressures. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.

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