Dedicated to Dieter Schmeißer on the occasion of his 60th birthday
The influence of the silicon/silicon oxide space charge region on excess charge carrier kinetics in silicon†
Version of Record online: 9 NOV 2010
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 248, Issue 2, pages 352–360, February 2011
How to Cite
Moreno, E. M. and Kunst, M. (2011), The influence of the silicon/silicon oxide space charge region on excess charge carrier kinetics in silicon. Phys. Status Solidi B, 248: 352–360. doi: 10.1002/pssb.201046515
- Issue online: 25 JAN 2011
- Version of Record online: 9 NOV 2010
- Manuscript Accepted: 29 SEP 2010
- Manuscript Revised: 27 SEP 2010
- Manuscript Received: 24 MAY 2010
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