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High performance thin-film transistors using moderately aligned semiconducting single-wall carbon nanotubes

Authors

  • Shunjiro Fujii,

    1. Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562, Japan
    2. JST, CREST, Kawaguchi 330-0012, Japan
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  • Takeshi Tanaka,

    1. Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562, Japan
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  • Satoko Nishiyama,

    1. Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562, Japan
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  • Hiromichi Kataura

    Corresponding author
    1. Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562, Japan
    2. JST, CREST, Kawaguchi 330-0012, Japan
    • Phone: +81-29-8612551, Fax: +81-29-8612786
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Abstract

Thin-film transistors (TFTs) using aligned network of semiconductor-enriched single-wall carbon nanotubes (s-SWCNTs) were fabricated on a SiO2/Si substrate. The aligned thin film was prepared by N2 blow in the drying process using as separated s-SWCNT solution prepared by the agarose gel chromatography. We demonstrated that TFT using a moderately aligned s-SWCNT thin film shows drastically improved transfer characteristics. The TFT simultaneously showed a mobility of 19.6 cm2/(V · s) and an on/off ratio of 1.7 × 105, although the purity of semiconductor used in this work was not higher than 90%. Because the alignment process is very easy and effective, it is expected that moderately aligned s-SWCNT film could be used to practical circuits made of s-SWCNT TFTs.

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