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Keywords:

  • AlGaN;
  • AlInN;
  • band engineering;
  • UV emission efficiency

Abstract

The interband excitonic transition energies and their corresponding polarization properties of AlGaN and AlInN alloys pseudomorphically grown on c-plane GaN and AlN templates, have been systematically investigated under the framework of k · p perturbation theory. It is found that by changing alloy composition which is accompanied with misfit strain modulation, the valence band structure of both AlGaN and AlInN can be switched from AlN-like to GaN-like, thus leading to enhancement of the surface ultraviolet emission efficiency. Optimal alloy composition windows for efficient ultraviolet emissions have been established where AlGaN and AlInN alloys grown on AlN template show wider optimal windows than that grown on GaN template.