Get access

Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

Authors

  • Jakob J. Brondijk,

    Corresponding author
    1. Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
    • Phone: +31 50 3638750, Fax: +31 50 3638751
    Search for more papers by this author
  • Francesco Maddalena,

    1. Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
    Search for more papers by this author
  • Kamal Asadi,

    1. Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
    Search for more papers by this author
  • Herman J. van Leijen,

    1. Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
    Search for more papers by this author
  • Martin Heeney,

    1. Department of Chemistry, Imperial College London, SW7 2AZ London, UK
    Search for more papers by this author
  • Paul W. M. Blom,

    1. Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
    2. TNO Holst Centre, P.O. Box 8550, 5605 KN Eindhoven, The Netherlands
    Search for more papers by this author
  • Dago M. de Leeuw

    1. Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
    2. Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
    Search for more papers by this author

Abstract

We investigate the mobility of poly(3-hexylthiophene) (P3HT) over a carrier-density range from 1015 to 1020 cm−3. Hole-only diodes were used for densities below 1016 cm−3 and field-effect transistors were used for carrier densities higher than 1018 cm−3. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier-density range.

Ancillary