• electrochemical doping;
  • graphene;
  • isotope labeling;
  • Raman spectroscopy


A detailed understanding of graphene properties both in its neutral and doped states is an important prerequisite for applications of this new material in electronic devices. We used electrochemical doping to study the influence of charge on isotopically labeled two-layer graphene. No change of the G mode intensity was observed at electrode potentials between −1.5 and 1 V. At high positive electrode potentials (>1 V) we observed enhancement of the G mode intensity due to partial removal of interfering resonant transitions. Hence, we confirmed that in case of absence of the enhancement due to a specific orientation between the two layers the Raman spectroelectrochemistry of non-stacked two-layer graphene mimics that of one-layer graphene.