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Raman spectroscopy of isotopically labeled two-layer graphene

Authors

  • Martin Kalbac,

    Corresponding author
    1. J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Dolejškova 3, 18223 Prague 8, Czech Republic
    2. Department of Physical Chemistry, Palacky University, 77146 Olomouc, Czech Republic
    • Phone: 420 2 6605 3804, Fax: 420 2 8658 2307
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  • Jing Kong,

    1. Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts 02139, USA
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  • Ladislav Kavan,

    1. J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Dolejškova 3, 18223 Prague 8, Czech Republic
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  • Mildred S. Dresselhaus

    1. Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts 02139, USA
    2. Department of Physics, MIT, Cambridge, Massachusetts 02139, USA
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Abstract

A detailed understanding of graphene properties both in its neutral and doped states is an important prerequisite for applications of this new material in electronic devices. We used electrochemical doping to study the influence of charge on isotopically labeled two-layer graphene. No change of the G mode intensity was observed at electrode potentials between −1.5 and 1 V. At high positive electrode potentials (>1 V) we observed enhancement of the G mode intensity due to partial removal of interfering resonant transitions. Hence, we confirmed that in case of absence of the enhancement due to a specific orientation between the two layers the Raman spectroelectrochemistry of non-stacked two-layer graphene mimics that of one-layer graphene.

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