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Growth and characterization of thin Si–C films in RF plasma and optical emission spectroscopy



Radio frequency (RF; 13.56 MHz), non-equilibrium low-pressure plasma is a robust environment well suited for the deposition of thin films. The parametric research has been carried out in a novel system on the formation of SiC-related thin films resulting from the decomposition of tetramethylsilane TMS, Si(CH3)4. The films were deposited under various conditions to determine the effects of process parameters on both deposition and quality of the films. Carbonaceous thin films (methane CH4 was used as a precursor) were deposited too, to prove broad applicability of RF plasma. Optical emission spectroscopy helped to better understand the chemical transformation of starting reactants.

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