Growth, dispersion, and electronic devices of nitrogen-doped single-wall carbon nanotubes
Article first published online: 12 NOV 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (b)
Volume 249, Issue 12, pages 2416–2419, December 2012
How to Cite
Oikonomou, A., Susi, T., Kauppinen, E. I. and Vijayaraghavan, A. (2012), Growth, dispersion, and electronic devices of nitrogen-doped single-wall carbon nanotubes. Phys. Status Solidi B, 249: 2416–2419. doi: 10.1002/pssb.201200146
- Issue published online: 4 DEC 2012
- Article first published online: 12 NOV 2012
- Manuscript Accepted: 14 SEP 2012
- Manuscript Revised: 13 AUG 2012
- Manuscript Received: 4 MAY 2012
- nitrogen doping;
- single-walled carbon nanotubes
This paper describes the complete processes from growth to electronic devices of nitrogen-doped single-wall carbon nanotubes (N-SWCNTs). The N-SWCNTs were synthesized using a floating catalyst chemical vapor deposition method. The dry-deposited N-SWCNT films were dispersed in N-methylpyrolidone followed by sonication and centrifugation steps to yield a stable dispersion of N-SWCNTs in solution. The length and diameter distribution as well as concentration of N-SWCNTs in solution were measured by atomic force microscopy and optical absorption spectroscopy, respectively. The N-SWCNTs were then assembled into electronic devices using bottom–up dielectrophoresis and characterized as field-effect transistors. Finally, the potential for application of N-SWCNTs in sensors is discussed.
The three stages of N-doped SWCNT processing: (a) growth and collection on filter, (b) dispersion in NMP, and (c) dielectrophoretic assembly into transistor device.